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81.
Gyula Záray Tibor Kántor Gerhard Wolff Zdravka Zadgorska Hubertus Nickel 《Mikrochimica acta》1992,107(3-6):345-358
The analytical capability of high-temperature halogenation with carbon tetrachloride vapour in a graphite furnace was investigated for silicon carbide powder with known chemical composition and particle size. Intensity vs heating time curves were determined for analytical lines of Al, B, Ba, Ca, Cr, Cu, Fe, Mg, Mn, Ti, V and Si constituents, volatilized with and without the presence of CCl4 vapour in the furnace atmosphere. Igniting 10 mg SiC at 2100 °C for 60 s in chlorinating atmosphere, the evaporated fraction of most of the constituents was higher than 90% (for Al about 50%). The line intensity vs sample mass (4–26 mg) relationships were linear for all impurities studied, while the intensity of silicon line showed a relatively small change with the sample mass. BEC (background equivalent concentration) values for this solid sampling technique (10 mg loaded sample) were 2–20 fold lower than those calculated for the conventional solution sample introduction method. 相似文献
82.
A chemical flux of sulfur hexafluoride (SF6) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF6. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching. 相似文献
83.
84.
选用四种不同的密度泛函理论方法(B3LYP,B3P86,BLYP,BP86),在全电子的双ξ加极化加弥散函数基组(DZP )下,对SinH/SinH^-(n=3~8)体系进行研究,获得它们的基态结构和电子亲合能。预测Si3H/Si3H^-,Si4H/Si4H^-,Si5H/Si5H^-,Si6H/Si6H^-,Si7H/Si7H^-和Si8H/Si8H^-的基态结构分别为C2v(^2B2)/C2v(1^A1)氢桥结构,Cs(^2A’)/C(^1A’),C2v(^2B2)/C2v(^1A1),C2v(^2B2或^2B1)/C4v(^1A1),C5v(^2A1)/C5v(^1A1)和C5(^2A‘‘)/C3v(^1A1)。在电子亲合能方面,B3LYP方法预测的电子亲合能是最可靠的,预测Si3H,Si4H,Si5H,Si6H,Si7H和Si8H的电子亲合能分别为2.56,2.59,2.84,2.86,3.19和3.14eV。 相似文献
85.
Erik J. Faber Dr. Wouter Sparreboom Wilrike Groeneveld Louis C. P. M. de Smet Dr. Johan Bomer Wouter Olthuis Dr. Han Zuilhof Dr. Ernst J. R. Sudhölter Prof. Piet Bergveld Prof. Albert van den Berg Prof. 《Chemphyschem》2007,8(1):101-112
The electrochemical behavior of Si--C linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes under practical conditions. This is done via titration experiments, Mott-Schottky data analysis, and data fitting using a site-binding model. The results are compared with those of native SiO(2) layers and native SiO(2) layers modified with hexamethyldisilazane. All samples display pH sensitivity. The number of Si--OH groups on the alkylated samples is calculated to be less than 0.7 % of that of a pure SiO(2) insulator, which still causes a pH sensitivity of approximately 25 mV per pH unit in the pH range: 4-7. The alkylated samples hardly suffer from response changes during up- and down-going titrations, which indicates that very little oxide is additionally formed during the measurements. The pK(a) values of all samples with monolayers (4.0-4.4) are lower than that of native SiO(2) (6.0). The long-term drift (of approximately 1 mV h(-1)) is moderate. The results indicate that biosensors composed of alkylated Si substrates are feasible if a cross-sensitivity towards pH in the sensor signal is taken into account. 相似文献
86.
A convenient and efficient preparation of Stryker's reagent, [Ph3PCuH]6, under homogeneous conditions using silanes as the reducing agent is detailed. The reaction time can be reduced to 1-2 h, and high yields of Stryker's reagent can be routinely achieved. The same method has been extended to the synthesis of [Ph3PCuD]6 using Ph2SiD2. 相似文献
87.
在新型掺钪(Sc)氮化铝(Al1-xScxN)集成光学平台上设计了插入损耗低、传输通道谱线平坦的O波段四通道波分(解)复用器,并提出了优化方法。所设计的器件结构基于级联马赫-曾德尔干涉仪(MZI)滤波器,结合弯曲波导结构的定向耦合器改善波长敏感度。针对粗波分复用(CWDM)应用的特性,文章使用粒子群算法(PSO)提升器件性能优化的效率,通过调整器件结构的设计参数对四路通道的传输谱线质量进行优化。针对0%,9%,23%的掺Sc浓度,设计的解复用器表现出宽达约15.6nm的1-dB带宽和小于0.1dB的插入损耗,传输谱线呈“盒状”响应,各通道间串扰均优于-30.6dB。 相似文献
88.
基于CMOS工艺制备了空穴触发的Si基雪崩探测器(APD),基于不同工作温度下器件的击穿特性,建立空穴触发的雪崩器件的击穿效应模型。根据雪崩击穿模型和击穿电压测试结果,拟合曲线得到击穿电场与温度的关系参数(dE/dT),器件在250~320 K区间内,击穿电压与温度是正温度系数,器件发生雪崩击穿为主,dV/dT=23.3 mV/K,其值是由倍增区宽度以及载流子碰撞电离系数决定的。在50~140 K工作温度下,击穿电压是负温度系数,器件发生隧道击穿,dV/dT=-58.2 mV/K,其值主要受雪崩区电场的空间延伸和峰值电场两方面因素的影响。 相似文献
89.
Hengfei Gu Fei Zhang Shinjae Hwang Anders B. Laursen Xin Liu So Yeon Park Mengjin Yang Rosemary C. Bramante Hussein Hijazi Leila Kasaei Leonard C. Feldman Yao-Wen Yeh Philip E. Batson Bryon W. Larson Mengjun Li Yifei Li Keenan Wyatt James L. Young Krishani Teeluck Kai Zhu Eric Garfunkel G. Charles Dismukes 《Advanced functional materials》2023,33(25):2301196
The rapidly increasing solar conversion efficiency (PCE) of hybrid organic–inorganic perovskite (HOIP) thin-film semiconductors has triggered interest in their use for direct solar-driven water splitting to produce hydrogen. However, application of these low-cost, electronic-structure-tunable HOIP tandem photoabsorbers has been hindered by the instability of the photovoltaic-catalyst-electrolyte (PV+E) interfaces. Here, photolytic water splitting is demonstrated using an integrated configuration consisting of an HOIP/n+silicon single junction photoabsorber and a platinum (Pt) thin film catalyst. An extended electrochemical (EC) lifetime in alkaline media is achieved using titanium nitride on both sides of the Si support to eliminate formation of insulating silicon oxide, and as an effective diffusion barrier to allow high-temperature annealing of the catalyst/TiO2-protected-n+silicon interface necessary to retard electrolytic corrosion. Halide composition is examined in the (FA1-xCsx)PbI3 system with a bandgap suitable for tandem operation. A fill factor of 72.5% is achieved using a Spiro-OMeTAD-hole-transport-layer (HTL)-based HOIP/n+Si solar cell, and a high photocurrent density of −15.9 mA cm−2 (at 0 V vs reversible hydrogen electrode) is attained for the HOIP/n+Si/Pt photocathode in 1 m NaOH under simulated 1-sun illumination. While this thin-film design creates stable interfaces, the intrinsic photo- and electro-degradation of the HOIP photoabsorber remains the main obstacle for future HOIP/Si tandem PEC devices. 相似文献
90.