Ni含量对Nd_2Fe_(17)磁粉吸波性能的影响

采用高能球磨和微氧化气氛热处理制备了Nd2(Fe1–xNix)17(x=0,0.05,0.15,0.50)吸波粉体,研究了Ni的含量对NdFeNi粉体的相组成和吸波性能的影响。结果表明:当x=0,0.05,0.15和0.50时,样品的组成相均是Nd2Fe17、α-Fe和Nd2O3相。NdFe样品对电磁波的损耗以介电损耗为主;NdFeNi样品对电磁波的损耗以磁损耗为主。随着Ni含量的增加,样品对微波的吸收峰逐渐向低频移动,且其反射率逐渐升高。     

基于微波多层板的小型化多通道接收前端设计

基于微波多层板技术,通过对单片微波集成电路(MMIC)、微机电系统(MEMS)和低温共烧陶瓷(LTCC)滤波器等微组装工艺的优化和分析,使多通道接收前端进一步实现小型化设计和应用。同时,对电路和结构进行改进,使前端组件具有更好的幅相一致性和高隔离度。最终实现的C频段四通道接收前端尺寸为120 mm×50 mm×12 mm,幅相一致性分别小于±0.8 d B和±5°,通道间隔离度高于60 d Bc。该设计方法的实现为小型化多通道接收前端的工程化应用提供了一种有效的解决方案。     

浅谈"微波技术与天线"课程中的创造力培养

创造力培养已经是高校教学改革的一项重要任务.本文对创造力的基本元素以及阻碍创造力发展的因素作了详细阐述,结合"微波技术与天线"课程的内容和特点,对如何在课程中培养大学生的创新意识和创新思维作了探讨,对创新思维训练给出了建设性意见.     

微波平衡检波器的设计与制作

介绍一种宽频带微波平衡检波器,论述检波器的原理和设计,并给出设计结果和测试结果.这种检波器体积小,重量轻,频带宽,性能稳定可靠,易于集成,与单管检波器相比,更具有动态范围大,抗烧毁能力强等诸多优点,可在微波领域广泛应用.     

射频六端口网络在软件无线电中的应用

对射频六端口网络在射频上直接解调各类调制信号的普遍适用性进行了理论分析,推导了射频六端口网络解调正交调制信号的一般表达式,并对QPSK、16QAM和π/4QPSK三种调制制式使用计算机仿真验证了表达式的正确性;此外,仿真研究了射频六端口性能指标对解调性能的影响,其结果表明对于QPSK调制信号正交电桥0.3dB的幅度不平衡度和3o的相位不平衡度带来的解调性能恶化小于0.5dB。     

Multifunctional Shape Memory Composites for Joule Heating,Self-Healing,and Highly Efficient Microwave Absorption

Traditional microwaves absorption materials (MAMs) are applied in the form of coatings, generally inflexible, with high production costs and poor adaptability to applications in different locations. The diversification of application scenarios requires materials with multifunctionalities, but it is extremely challenging to integrate multifunctionalities within single material at present. Herein, a multifunctional CoNC@GN/PCL/TPU MAMs is synthesized. The CoNC@GN nano-micro absorber has high-efficiency microwave absorption ability. The electromagnetic microwave absorption performance is ultra-light (4 wt.%), ultra-thin (2.3 mm), and broadband (6.21 GHz), which is better than similar MAMs. Additionally, the samples have highly efficient electro-thermal conversion properties, enabling controlled electrical heating performance and excellent self-healing properties. More remarkably, the sample has an electrically driven shape memory effect that allows the material to target the absorption of multi-angle incident electromagnetic waves. Therefore, CoNC@GN/PCL/TPU absorbers are the key to truly opening up opportunities for flexible, shape memory, and multifunctional absorbers in frontier applications such as wearables, deformable robots, and chip protection.     

微波热击处理对大豆种子萌发及活力的影响

以大豆（Glycine max）为实验材料,利用统计分析的方法研究了微波热击对种子萌发特性及活力的影响。结果表明：热击处理可提高大豆种子的发芽率,复合微波处理显著促进了芽长和芽活力指数,抑制了电解质渗漏,提高可溶性糖含量和过氧化物酶（POD）活性,萌芽蛋白质含量及氨基酸总量均升高,其中以45℃热击5min及50℃热击2min加微波处理后的大豆芽长、芽活力指数与对照比达极显著水平,蛋白质和氨基酸总量的影响也分别达到显著和极显著水平。同一处理随时间延长,生理效应呈下降趋势。因此,适宜剂量的微波热击复合效应可以促进大豆种子萌发和早期代谢。     

颗粒包覆法制备BZT-CT复合陶瓷

采用预合成的方法,分别用得到的单斜类锆钙钛矿相Bi2(Zn1/3Ta2/3)2O7(β-BZT)和钙钛矿相CaTiO3(CT)的粉末作为正负温度系数组元,用sol-gel法制备的ZnO-B2O3-SiO2玻璃,包覆两组元颗粒以阻止其相互反应,从而制备复相零温度系数微波陶瓷。结果表明:预合成及颗粒包覆法可抑制两相固溶反应,有效降低复相陶瓷的烧结温度,调节温度系数。特别是900℃烧结的w(CT)为4%的样品,其εr约为47,αε为2.8×10–6℃–1。     

Broadband Wireless Access Solutions - Progressive Challenges and Potential Valueof Next Generation Mobile Networks

The growth in mobile communication will accelerate over the next years. Today most of the mobile subscribers use cellular services only. But this will change in the near future towards broadband wireless access services like WiFi and WiMAX. This paper describes a fundamental overview of the broadband wireless access technologies and outlines the market view, major trends and introduces OFDM technologies. New developments for integration of broadband wireless access into the operators' infrastructure are also discussed.     

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.