Contacting boron emitters on n‐type silicon solar cells with aluminium‐free silver screen‐printing pastes

In the production of n‐type Si solar cells, B diffusion is commonly applied to form the p⁺ emitter. Up to now, Ag screen‐printing pastes, generally used to contact P emitters, had been incapable of reliably contact B emitters. Therefore, a small amount of Al is generally added to Ag pastes to allow for reasonable contact resistances. The addition of Al, however, results in deep metal spikes growing into the Si surface that can penetrate the emitter. Losses in open‐circuit voltage are attributed to these deep metal spikes. In this investigation we demonstrate, that state‐of‐the‐art Al‐free Ag screen‐printing pastes are capable to contact BBr₃‐based B emitters covered with different dielectric layers and reach specific contact resistances <1 mΩ cm². Bifacial n‐type solar cells with Al‐free Ag pastes on both sides show efficiencies of up to 18.3% and series resistances <0.5 Ω cm². (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

金属化光纤光栅高温失效及其光谱特性

光纤光栅(FBG)作为温度传感器在智能结构领域得到广泛关注,然而将其埋入金属基体的方法大多是焊接方法。由于焊接过程经历高温,对FBG传感特性将产生一定不良影响。为提高FBG在高温工况下的应用,采用化学镀结合电镀的方法,对FBG进行了镀铜、镀镍金属化试验。采用高温加热炉对金属化FBG进行了短时间高温失效试验,分析了300~900℃区间内金属化FBG的温度灵敏度、光谱特性以及功率衰减规律。结果表明:在300~800℃温度区间,镀铜、镀镍的FBG以及裸光栅的平均温度灵敏度分别为15.35 pm/℃、16.34 pm/℃、16.1 pm/℃;金属化FBG的失效温度约为900℃,与裸光栅相比提高了约100℃;获得了金属化FBG失效过程的光谱及反射峰功率衰减情况。     

金属化花粉红外、微波特性测试与分析

针对当前包覆型复合功能材料的需求,利用化学镀铜方法制备了表面镀铜的金属化花粉,对金属化花粉的形态、红外与微波特性进行了测试与分析。SEM图显示花粉金属化后形态保持良好,不发生破裂或变形,镀层厚度较均匀、致密。外层包覆的金属镀层使颗粒显示出特殊的红外与微波特性,而轻质花粉内核保证了颗粒具有较低的质量密度。研究结果表明:金属化花粉具有作为红外与微波波段材料的潜力。     

3D amino-induced electroless plating: a powerful toolset for localized metallization on polymer substrates

The "3D amino-induced electroless plating" (3D-AIEP) process is an easy and cost-effective way to produce metallic patterns onto flexible polymer substrates with a micrometric resolution and based on the direct printing of the mask with a commercial printer. Its effectiveness is based on the covalent grafting onto substrates of a 3D polymer layer which presents the ability to entrap Pd species. Therefore, this activated Pd-loaded and 3D polymer layer acts both as a seed layer for electroless metal growth and as an interdigital layer for enhanced mechanical properties of the metallic patterns. Consequently, flexible and transparent poly(ethylene terephtalate) (PET) sheets were selectively metalized with nickel or copper patterns. The electrical properties of the obtained metallic patterns were also studied.     

Al/Ni : V/Ag metal stacks as rear‐side metallization for crystalline silicon solar cells

Rear sides of crystalline silicon solar cells are usually covered with aluminum on which it is difficult to solder. To ease soldering, we present a durability study for a Ni : V/Ag stack on evaporated Al as rear‐side metallization. We adapt this cost‐effective metallization stack from the microelectronic industry and investigate it as metallization for silicon solar cells. Here, a long‐term stability of the metallization and of the solder joint must be guaranteed for 25 years and is therefore evaluated in detail by thermal aging experiments. During this experiment, the mechanical stability of the solder joints is measured. The chemical stability and the intermetallic compound (IMC) growth within the solder joints are examined by secondary electron microscopy, backscattered electron imaging, and energy dispersive X‐ray analysis. Experiments with either a Sn–Ag‐coated copper tab or pure Sn–Ag solder show two different sorts of IMCs at the Ni : V/Solder interface. With the copper tab, a Cu–Ni–Sn compound, presumably (Cu_{1 ‐ x}Ni_x)₆Sn₅, grows at the Ni/solder interface, whereas in case of a pure Sn–Ag solder, a Ni–Sn compound grows, which is likely to be Ni₃Sn₄. Analysis of the reaction kinetics leads to activation energies of 77 and 42 kJ/mol, respectively, for a diffusion‐controlled IMC growth. By using temperature histograms of PV modules in the field, the necessary minimum Ni : V layer thickness is estimated: without a copper tab up to 1.6 µm Ni and with a copper tab less than 0.2 µm may be consumed by IMC formation during 25 years of lifetime. Copyright © 2012 John Wiley & Sons, Ltd.     

可实现温度降敏的金属化光纤布拉格光栅

针对光纤布拉格光栅(FBG)传感器用于精确测量应力/应变场合时需屏蔽或补偿其温度灵敏性,本文在FBG化学镀Ni保护的基础上加入ZrO2微粒,形成Ni-ZrO2化学复合镀层,既具有金属镀层的保护作用,同时又实现了FBG的温度降敏。经元素分类扫描(EDS)测试,Zr元素的质量含量为30.12%,Ni元素的质量含量为67.87%;经扫描电镜(SEM)检测,复合镀层与FBG传感器结合紧密。对两支Ni-ZrO2化学复合镀保护的FBG传感器进行了多次30～90℃的温度传感实验,相比于化学镀Ni的FBG,其温度灵敏系数平均下降了34.59%。这表明,经Ni-ZrO2化学复合镀保护的FBG传感器具有温度降敏的特性。     

Selective laser ablation of SiNx layers on textured surfaces for low temperature front side metallizations

For an alternative front side metallization process without screen printing of metal paste the selective opening of the front surface anti‐reflection coating could be realized by laser ablation. A successful implementation of this scheme requires direct absorption of the laser light within the anti‐reflection coating, since the emitter underneath must not be damaged severely. Additionally, the ablation must be feasible on textured surfaces. In this paper, we show that laser light with a wavelength of 355 nm and a pulse length of approximately 30 ns is absorbed directly by a typical silicon nitride anti‐reflection coating. Based on lifetime measurements on ablated samples it is shown that a damage free laser ablation of SiN_x layers on planar surfaces is possible. The characteristic ablation structure on textured surfaces is explained and quantified by rigorous coupled wave analysis (RCWA) simulations. Finally, high efficiency solar cells with a standard emitter (R_sh approx. 50 Ω/sq) have been processed using laser ablation of the silicon nitride anti‐reflection coating. These cells show efficiencies of up to 19·1%, comparable to the reference solar cells using photolithographically opened contact areas. Copyright © 2008 John Wiley & Sons, Ltd.     

Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

The saddle field fast atom beam sputtered (ABS) 50 nm thick molybdenum carbide (Mo₂C) films as a diffusion barrier for copper metallization were investigated. To study the diffusion barrier properties of Mo₂C films, the as-deposited and annealed samples were characterized using four probes, X-ray diffraction, field enhanced scanning electron microscopy, energy dispersive X-ray analysis, atomic force microscopy and Rutherford back scattering techniques. The amorphous structure of the barrier films along with presence of carbon atoms at the molybdenum carbide-silicon interface is understood to reduce effective grain boundaries and responsible for increased thermal stability of Cu/Mo₂C/Si structure. The lowest resistivity of the as-deposited molybdenum carbide barrier films was ∼29 μΩ cm. The low carbon containing molybdenum carbide was found thermally stable up to 700 °C, therefore can potentially be used as a diffusion barrier for copper metallization.     

Fine line printed silicon solar cells exceeding 20% efficiency

Silicon solar cells with passivated rear side and laser‐fired contacts were produced on float zone material. The front side contacts are built up in two steps, seed and plate. The seed layer is printed using an aerosol jet printer and a silver ink. After firing this seed layer through the silicon nitride layer, the conductive layer is grown by light induced plating. The contact formation is studied on different emitter sheet resistances, 55 Ω/sq, 70 Ω/sq, and on 110 Ω/sq. These emitters are passivated with a PECVD silicon nitride layer which also acts as an anti‐reflection coating. Even on the 110 Ω/sq emitters it was possible to reach a fill factor of 80·1%. The electrical properties i.e., the contact resistance of the front side contacts are studied by transfer length model (TLM) measurements. On a cell area of 4 cm² and emitter sheet resistance of 110 Ω/sq, a record efficiency of 20·3% was achieved. Excellent open‐circuit voltage (V_oc) and short‐circuit current (j_sc) values of 661 mV and 38·4 mA/cm² were obtained due to the low recombination in the 110 Ω/sq emitter and at the passivated rear surface. These results show impressively that it is possible to contact emitter profiles with a very high efficiency potential using optimized printing technologies. Copyright © 2008 John Wiley & Sons, Ltd.     

Development of under bump metallizations for flip chip bonding to organic substrates

Several under bump metallization (UBM) schemes using CuNi alloys as the solderable layer were investigated. Nickel slows down dissolution of the UBM into the solder and formation of intermetallics during reflow. To study the intermetallic reaction, CuNi foils of different concentrations were immersed in a eutectic PbSn solder bath for reaction times ranging from 30 seconds to 30 minutes. It was observed that when 10% and 20% Ni is added into copper, the intermetallic forms a continuous layer, instead of the discrete scallops seen in pure Cu/solder interfaces. However, the thickness of the intermetallic remained about the same. For 30% and 45% Ni alloys a definite decrease in the intermetallic thickness was observed compared to the lower Ni alloys. Actual under bump metallizations were also made on Si wafers to study the reactions when there is a limited supply of CuNi available. Cr or Ti was used as the adhesion layer, and the solderable layer was a copper-nickel alloy, instead of pure copper used in the conventional UBM scheme. The metal layers were deposited on a wafer by evaporation and patterned into contact pads. Eutectic PbSn solder balls were reflowed on top of the pads. SEM micrographs of the intermetallic that forms at the UBM/solder interface show the refining effect of Ni in the interfacial microstructure. Since nickel metallizations often have high stresses, stress in the UBMs was measured by the wafer curvature method. Stress vs Ni content plots show that while stresses increase somewhat with the Ni content, the adhesion layer under the CuNi layer has a much larger effect on the stress. UBMs with Cr/CrCu adhesion layer had stresses ranging from about 300 to 600 MPa, while the stresses in UBMs with Ti/TiNi layers were between 70 and 350 MPa.