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Kexin Chen Makusu Tsutsui Fuwei Zhuge Yue Zhou Yaoyao Fu Yuhui He Xiangshui Miao 《Advanced Electronic Materials》2021,7(4):2000848
As a novel class of memristors, nanochannel-based interfacial memristors in polydimethylsiloxane offer great flexibility and low cost. With practical attributes of novel transport phenomenon in nanofluidics, analysis of the physical properties and operational mechanisms in such memristor devices is possible. Made of pure soft-matter materials, this type of device exhibits facile tuning of device conductance via the modification of solution interface positions. Under continuous sweep voltage, a typical hysteresis loop for a memristor can be observed. In this article, the dynamic frequency characteristics of this device is measured, which is regarded as a typical memristor characteristic as previously predicted. However, the physical mechanism behind such memristive behaviors and frequency characteristics is seldomly reported. Generalizing conventional physical models, here a comprehensive model including continuous voltage changes and surface tension modifications is proposed, which is able to predict the interface position changes and explain the conductance switching and frequency property experimentally observed in the device. Provided with a probable explanation of the physical mechanism behind this class of device, the model can serve as a candidate method in designing new nanochannel-based structures or materials, aiming at more novel functionalities in neuromorphic computation. 相似文献
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Minhyung Ahn Yongmo Park Seung Hwan Lee Sieun Chae Jihang Lee John T. Heron Emmanouil Kioupakis Wei D. Lu Jamie D. Phillips 《Advanced Electronic Materials》2021,7(5):2001258
Memristors have emerged as transformative devices to enable neuromorphic and in-memory computing, where success requires the identification and development of materials that can overcome challenges in retention and device variability. Here, high-entropy oxide composed of Zr, Hf, Nb, Ta, Mo, and W oxides is first demonstrated as a switching material for valence change memory. This multielement oxide material provides uniform distribution and higher concentration of oxygen vacancies, limiting the stochastic behavior in resistive switching. (Zr, Hf, Nb, Ta, Mo, W) high-entropy-oxide-based memristors manifest the “cocktail effect,” exhibiting comparable retention with HfO2- or Ta2O5-based memristors while also demonstrating the gradual conductance modulation observed in WO3-based memristors. The electrical characterization of these high-entropy-oxide-based memristors demonstrates forming-free operation, low device and cycle variability, gradual conductance modulation, 6-bit operation, and long retention which are promising for neuromorphic applications. 相似文献
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The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS‐to‐LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction's performance. 相似文献
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Mohit Kumar Malkeshkumar Patel Dae Young Park Hong‐Sik Kim Mun Seok Jeong Joondong Kim 《Advanced Electronic Materials》2019,5(2)
A switch‐like structure that can be turned on/off with photons is considered necessary for most optoelectronic devices, such as phototransistors and photodetectors. However, developing a single device whose photoresponse can be modulated without changing the measuring voltage or illuminating light is challenging, and yet to be achieved. In this work, a conceptually new 2D perovskite‐based fully transparent two‐terminal optoelectronic device that can be turned on/off with a short electric pulse without any further change in the measuring conditions, such as the illuminating photon or applied voltage is proposed and demonstrated. The device exhibits loop opening in the current–voltage characteristics, which is utilized to design the novel electrically triggered optoelectronic device. The photocurrent of the device can be modulated from zero to 2.2 mA using a simple voltage pulse. Further, a responsivity of 550 mA W−1 and detectivity of 2.16 × 1010 Jones are measured in the on‐state. Potentially, the approach opens a new avenue for the design of two‐terminal advanced highly transparent optoelectronic devices, such as smart windows and transparent image sensors. 相似文献
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Mengdi Qian Ignasi Fina Milena Cervo Sulzbach Florencio Snchez Josep Fontcuberta 《Advanced Electronic Materials》2019,5(3)
Advanced use of ferroelectric capacitors in data storage and computing relies on the control of their electrical resistance (electroresistance, ER) by the change of the electrostatic potential profile across the capacitor occurring upon electric field–driven polarization switching. Here it is reported the observation that BaTiO3‐based capacitors, sandwiched between Pt and La2/3Sr1/3MnO3 electrodes, display a large ER, whose magnitude (near 104% at room temperature) and sign (ER > 0, ER < 0) are determined by the writing pulse duration and temperature. Temperature‐dependent measurements have been instrumental to obtain evidence of the presence of a thermally activated process coexisting with the electronic changes produced by ferroelectric polarization switching, both contributing to ER. Detailed analysis allows concluding that the thermally activated process can be attributed to field‐assisted ionic motion. It is argued that the relative balance between purely electronic and ionic diffusion processes modulate the height of the interfacial Schottky barriers and, consequently, are responsible for the observed variations of magnitude and sign of ER. 相似文献
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In the post-Moore era, neuromorphic computing has been mainly focused on breaking the von Neumann bottlenecks. Memristors have been proposed as a key part of neuromorphic computing architectures, and can be used to emulate the synaptic plasticities of the human brain. Ferroelectric memristors represent a breakthrough for memristive devices on account of their reliable nonvolatile storage, low write/read latency and tunable conductive states. However, among the reported ferroelectric memristors, the mechanisms of resistive switching are still under debate. In addition, there needs to be more research on emulation of the brain synapses using ferroelectric memristors. Herein, Cu/PbZr0.52Ti0.48O3 (PZT)/Pt ferroelectric memristors have been fabricated. The devices are able to realize the transformation from threshold switching behavior to resistive switching behavior. The synaptic plasticities, including excitatory post-synaptic current, paired-pulse facilitation, paired-pulse depression and spike time-dependent plasticity, have been mimicked by the PZT devices. Furthermore, the mechanisms of PZT devices have been investigated by first-principles calculations based on the interface barrier and conductive filament models. This work may contribute to the application of ferroelectric memristors in neuromorphic computing systems. 相似文献
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Haipeng B. Li Behabitu E. Tebikachew Cedrik Wiberg Kasper Moth-Poulsen Joshua Hihath 《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2020,132(28):11738-11743
The exponential proliferation of data during the information age has required the continuous exploration of novel storage paradigms, materials, and devices with increasing data density. As a step toward the ultimate limits in data density, the development of an electrically controllable single-molecule memristive element is reported. In this device, digital information is encoded through switching between two isomer states by applying a voltage signal to the molecular junction, and the information is read out by monitoring the electrical conductance of each isomer. The two states are cycled using an electrically controllable local-heating mechanism for the forward reaction and catalyzed by a single charge-transfer process for the reverse switching. This single-molecule device can be modulated in situ, is fully reversible, and does not display stochastic switching. The I–V curves of this single-molecule system also exhibit memristive character. These features suggest a new approach for the development of molecular switching systems and storage-class memories. 相似文献