Improved high‐temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

We report a stacked Y₂O₃/TiO_x resistive random access memory (RRAM) device, showing good high‐temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ～300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high‐temperature sneak current and tighter high‐temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiO_x and the related carrier depletion effect.

     

压电和铁电薄膜及其应用的发展趋势

本文讨论了压电和铁电薄膜材料及其在固体器件中应用的发展趋势。薄膜生长技术的进展,为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。ZnO和AIN薄膜将广泛地用于SAW和BAW器件。特别是成功地制作了薄膜体声波谐振器和高次谐波体波谐振器。以PbTiO_3为基的PZT和PLZT固溶体外延薄膜将应用于热电探测器和SAW器件。在实现了对多层薄膜的界面结构及其特性的成功控制之后,铁电薄膜将在铁电存储和集成光学领域发挥重要作用。     

Multi-state optical flip-flop memory based on ring lasers coupled through the same gain medium

We investigate a system consisting of multiple ring lasers coupled by a single gain medium. All the ring lasers share a common feedback arm. The output power of an individual laser shows periodic oscillations as a function of time. The periodicity of the oscillation is determined by the ratio of the roundtrip times of the feedback arm and the ring cavity. In the case that two of such ring lasers are coupled, either their oscillation periodicities are synchronized, or the system is bi-stable. In the latter operation regime, the system can act as an optical flip-flop memory whose state be switched by injection of external light. The concept can be extended to multi-state operations; an eight-state optical flip-flop memory is experimentally demonstrated.     

Self-Rolling-Up Enabled Ultrahigh-Density Information Storage in Freestanding Single-Crystalline Ferroic Oxide Films

Ferroelectric memory is one of the most attractive emerging nonvolatile memory. Conventional methods to increase storage density in ferroelectrics include reducing the storage bit size or fabricating 3D stacks. However, the former will face a physical limit finally, and the integration of single-crystalline ferroelectric oxide following the latter still remains a great challenge. Here, a new method is introduced to construct a scroll-like 3D memory structure by self-rolling-up single-crystalline ferroelectric oxides. PbZr_0.3Ti_0.7O₃ single-crystalline thin film is chosen as a prototype and epitaxially grown on another oxide stressor layer with a few lattice-mismatch. Releasing such “Pb(Zr, Ti)O₃/stressor” bilayered structure from the substrate induces self-rolling-up due to the internal stress from the lattice-mismatch. High-density information can be written in the form of switched ferroelectric domains on those flat “Pb(Zr, Ti)O₃/stressor” membranes via piezoelectric force microscopy. In self-rolling-up membranes, information density can be experimentally enhanced up to 45 times. Theoretically, the freestanding “Pb(Zr, Ti)O₃/stressor” membranes have a strongly driven force to self-rolling-up, and the area ratio can enhance 100–450 times, corresponding to an ultra-high density information storage of 10² Tbit In⁻². This study provides a new and general method to develop compact, high-density, and 3D memories from oxide materials.     

Molecular/Nanostructured Functional Metal Oxide Stacks for Nanoscale Nanosecond Information Storage

The metal oxide heterostructures market is exponentially growing, adhering to the trend of achieving fabrication versatility on a vast range of nonconventional electromagnetic and optical properties. A high degree of substrate tolerance and solution‐phase growth potential promise low‐cost flexible electronics and silicon‐based process compatibility. A molecule‐based complex oxide nanostructured stack integrated in an electro‐optically operable nonvolatile two‐terminal capacitive memory element is proposed. The cell demonstrates a remarkably high > 7 V memory window and write–read times down to 10 ns, promising for reliable high‐speed storage. Molecular orbital occupancy through broadband optical stimulus enables simultaneous phononic addressing and boosts the written information amount by up to 37%, achieving 10+ years storage duration. The resulting nonvolatile memories are the first‐documented complementary metal oxide semiconductor (CMOS)‐compatible long‐term‐retention molecular capacitive cell of its kind, implementing inherent structure‐emerging heat management. Great potential emerges for numerous energy‐inspired innovations, enabling functional oxide–molecular hybrids exploitation as high‐end nonvolatile memory products.     

基于梳状谱调制的相参多假目标干扰技术研究

针对多时延复制叠加干扰、间歇采样转发干扰等新型相参多假目标干扰样式硬件实现结构复杂的问题,提出了一种基于梳状谱调制的相参多假目标干扰技术。该技术利用数字储频采集存储的雷达相参样本,与梳状谱进行时域调制,在占用较少硬件资源的条件下,实现对线性调频雷达回波目标的前置性相参多假目标遮蔽和掩护。文中对相参多假目标的产生进行了详细的理论推导和分析,通过仿真验证了对线性调频雷达干扰的有效性,并给出了一种易于实现的硬件方案。     

Recent Developments in Oxide-Based Ionic Conductors: Bulk Materials,Nanoionics, and Their Memory Applications

Oxide-based ionic conductors have attracted tremendous research interests due to their wide applications in energy storage and conversion devices, such as photovoltaics, fuel cells, batteries, and supercapacitors. Extensive efforts have been undertaken to improve the ionic conductivity of existing materials along with the development of novel conductors. The recent advance of ionic conductors in nanoscale demonstrated their ultra–high ionic conductivity for the promising applications in energy sector. In this work, recent progresses of conventional oxide conductors and the development of novel conductors are reviewed in details. The strategy to exploit the nanoionics of enhancing the ionic conductivity is discussed. Furthermore, the novel applications of nanoionics for the resistive switching memories are summarized.     

Spinning-top dynamics of photorefractive grating

The photorefractive grating generated by two coupled waves produces a rich spatiotemporal dynamics such as those of solitons and chaos. In this paper, the dynamics of grating along with the slow-varying envelope of two coupled waves is studied where the photorefractive-coupling constant is large or more importantly the dynamics is much faster than the photorefractive response time of the material. Under this condition, new solutions of the dynamic grating equations are presented and analytically solved in the form of the Jacobi’s Elliptic functions. The spatiotemporal grating can result in a periodic space-charge field which in turn generates the space charge waves in the periodic case as a result of the spatiotemporal dynamics of the anisotropic two-wave mixing process. The theoretical work of the limiting case is in good agreement with the experimental results using a BaTiO₃ crystal.     

Study of aluminium-modified Ge2Sb2Te5 thin films for the applicability as phase-change storage device material

Electrical and optical studies have been carried out on aluminium-modified Ge₂Sb₂Te₅ thin films to check its applicability as an active material in optical and electrical memory storage devices. Five polycrystalline bulk samples were prepared with compositions: Al_x(Ge₂Sb₂Te₅)_1?x; x = 0, 0.08, 0.14, 0.21, 0.25. Amorphous thin films were deposited from the polycrystalline bulk by thermal evaporation. Temperature-dependent resistance shows the increase in crystallization temperature of Ge–Sb–Te films on aluminium addition. Activation energy for conduction, conductivity, optical band gap, coefficient of refraction and extinction coefficient are studied with respect to Al content in both amorphous and crystalline phases of Ge–Sb–Te alloy films.     

高功率飞秒激光与透明介质的相互作用及其应用

随着飞秒(fs.10-15s)激光近些年来得到迅速发展,飞秒激光已广泛应用于物理、化学反应的动力学过程分析.利用飞秒激光的热效应可以忽略的特点进行超精细加工.利用飞秒激光与透明材料的非线性相互作用,可以实现材料内部有空间选择性的三维光功能微结构.文章重点介绍了飞秒激光与透明介质相互作用的原理,以及在三维超高密度光存储、三锥光功能微结构等方面及应用,国内外相关领域的最新进展,并展望了应用前景.