Development and Application of Instrumental Methods for Strain Analysisof Semiconductor Layers and Devices

 Strain effects on semiconductor layers were studied by means of optical spectroscopic techniques with a device developed especially for the study of layered structures and microstructures. Raman, modulated photoreflectance and reflectance anisotropy spectroscopy (RAS) were applied. Measurements were performed on elemental semiconductors (Si), semiconductor alloys (Si–Ge) and III–V semiconductor compounds (GaAs). By application of RAS, strains lower than 10⁻⁴ could be resolved, which is at least one order of magnitude lower than those observable with Raman and modulated reflectance techniques. The RAS spectra of layers strained along either the [010] or [011] direction showed a derivative-like structure at E₁-gap energies, which increased linearly and very quickly with increasing strain. The dependence of this spectral feature on applied strain was used to evaluate strain-dependent effects. This behaviour strongly suggests that RAS can be applied for the optical characterisation of strain in semiconductor microstructures and devices, with a higher efficiency and accuracy than that achieved by previously established optical methods such as Raman and modulation spectroscopy. In addition, the compactness and ease of operation of the instrumentation of RAS provides considerable potential for in situ monitoring/control of semiconductor fabrication conditions.     

Polymer network liquid crystal grating/Fresnel lens fabricated by holography

In this article, polymer network liquid crystal (PNLC) grating/Fresnel lens is fabricated by holography. The exposure light pattern for the grating is obtained by interfering two planar wave fronts, while the Fresnel pattern is achieved by interfering a planar wave front and a spherical wave front. Owing to the alignment effect and anchoring power of polymer network, the holographic PNLC grating achieves improved diffraction efficiency, and remarkably reduced operation voltage (reduced by 80%) compared with holographic polymer-dispersed-liquid-crystal and holographic polymer-stabilised blue-phase liquid-crystal gratings, while maintaining submillisecond response. Moreover, it achieves high spatial frequency with a 2-μm grating period, thanks to the holographic fabrication. The holographic PNLC Fresnel lens also exhibits attractive electro-optical properties.     

三氧化钼——一种新型有机系钠离子储能器件负极材料

由于锂资源短缺,我们尝试使用三氧化钼作为钠离子储能装置负极材料。通过一种简单的方法合成了三氧化钼,使用XRD、SEM和TEM等测试手段对其物性进行了表征。利用三氧化钼作为有机系钠离子储能器件的负极材料,通过循环伏安和恒流充放电测试探讨了负极材料的储钠机理。以三氧化钼(MoO3)作为负极材料,活性炭(AC)和石墨(graphite)作为正极材料,组装成新型的电化学储能器件,研究了两种器件在1mol/L NaPF6的碳酸丙烯酯(PC)中的电化学性能。两种器件的电压范围分别为0~3.2V和0~3.5V,能量密度最高可分别达到31.6和53 Wh/kg,长循环性能远远优于AC/AC对称电容器。此种储能装置有望成为锂离子电池的一个很好的替代。     

A finite‐volume scheme for the multidimensional quantum drift‐diffusion model for semiconductors

A finite‐volume scheme for the stationary unipolar quantum drift‐diffusion equations for semiconductors in several space dimensions is analyzed. The model consists of a fourth‐order elliptic equation for the electron density, coupled to the Poisson equation for the electrostatic potential, with mixed Dirichlet‐Neumann boundary conditions. The numerical scheme is based on a Scharfetter‐Gummel type reformulation of the equations. The existence of a sequence of solutions to the discrete problem and its numerical convergence to a solution to the continuous model are shown. Moreover, some numerical examples in two space dimensions are presented. © 2010 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 27: 1483–1510, 2011     

Analysis of a Parabolic Cross-Diffusion Semiconductor Model with Electron-Hole Scattering

The global-in-time existence of non-negative solutions to a parabolic strongly coupled system with mixed Dirichlet–Neumann boundary conditions is shown. The system describes the time evolution of the electron and hole densities in a semiconductor when electron-hole scattering is taken into account. The parabolic equations are coupled to the Poisson equation for the electrostatic potential. Written in the quasi-Fermi potential variables, the diffusion matrix of the parabolic system contains strong cross-diffusion terms and is only positive semi-definite such that the problem is formally of degenerate type. The existence proof is based on the study of a fully discretized version of the system, using a backward Euler scheme and a Galerkin method, on estimates for the free energy, and careful weak compactness arguments.     

海量数据导入与导出MATLAB的有效方法

本文结合实例介绍了几种将海量统计数据快速、准确地导入与导出MATLAB系统的方法。克服了以往在编程窗口直接键入原始数据进行处理的诸多问题,因此对保证统计分析结果的准确性与加速MATLAB在统计分析领域的应用有着很重要的意义。     

The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 °C, 600 °C, 800 °C, and 1000 °C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 °C is determined as optimal annealing temperature for SAW devices. At 400 °C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 °C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k²) of ZnO film decrease from 3.8% at 600 °C to 1.49% at 1000 °C.     

Real‐Time and Broadband Terahertz Wave Scattering Manipulation via Polarization‐Insensitive Conformal Graphene‐Based Coding Metasurfaces

Here, for the first time, the real‐time and broadband manipulation of terahertz (THz) waves are acquired by introducing a multifunctional graphene‐based coding metasurface (GBCM). The designed structure consists of subwavelength patterned graphene units whose operational statuses can be dynamically switched between two digital states of “0” and “1”. By engineering the spatial distribution of chemical potentials across the GBCM, various scattering patterns having single, two, four, and numerous reflection beams are elaborately achieved just within one planar structure. To compute the far‐field pattern of GBCM, an inverse discrete Fourier transform (IDFT) is established, providing a fast and efficient design method. The proposed GBCM provides a low reflection bellow ?10 dB over a broad frequency band ranging from 1 THz to 1.9 THz. In addition, the metasurface retains its low reflection behavior in a wide range of incident wave angles for both TE and TM polarizations. According to conformal invariance of graphene sheets, the stealth property of GBCM is well preserved while wrapping around a curved object. The proposed technique of real‐time scattering manipulation leads to multifunctional THz devices, opening new routes contributing to numerous applications such as imaging and stealth technology.     

Analytical design of photonic band-gap fibers and their dispersion characteristics

The paper essentially deals with the analysis of photonic band-gap fibers in analogy with the electron wave motion in periodic crystal lattice. As such, the analyses are based on Bloch formulation. The dispersion characteristics of such fibers are presented by considering some illustrative values of design parameters. The effect of design parameters on the dispersion characteristics is also presented in terms of the variation of widths of allowed and forbidden bands of band-gap fibers. It is found that the number of allowed bands increases with the increase in difference between refractive indices of different layers. Further, widths of the allowed and forbidden bands increase with the increase in layer thickness.