Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells

In this study, we describe the correlations between the photoluminescence (PL) spectra and electrical properties of pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells (MDQWs) grown by molecular beam epitaxy. In MDQWs, the presence of a large sheet carrier density contributes significantly to the PL linewidth. At low temperatures (4.2 K), free carrier induced broadening of the PL linewidth is influenced by the material quality of the structure. At higher temperatures (77 K), differences in the material quality do not affect the linewidth significantly, and under these conditions the PL linewidth is a good measure of the sheet carrier density. The ratio of the 77 K to 4.2 K PL linewidths provides useful information about the crystalline quality of the MDQW structures as illustrated by the correlation with 77 K Hall mobility data and a simple model. We present results of Electron Beam Electroreflectance (EBER) to characterize MDQWs and undoped quantum wells in the AlGaAs/InGaAs/GaAs material system. Several transitions have been observed and fitted to excitonic Lorentzian lineshapes, providing accurate estimates of transition energy and broadening parameter at temperatures of 96 K and 300 K.     

微机特技扫换图形发生器

本文介绍一种新型的电视特技设备,其工作原理、设计思想和电路结构与现有的扫换特技设备均不相同。该设备不用传统的“三基波迭加法”,而采用单片微机直接产生扫换波形,因此功能齐全、硬件简单、性能稳定可靠、易于生产,并具有较高的性能价格比。本文对“微机特技”的基本设计思想、电路工作原理和结构、软件设计及关键技术都一一作了介绍。     

Analytical wide-band modeling of high frequency resistance in integrated spiral inductors

For integrated spiral inductor synthesis, designers and design automation tools require efficient modeling techniques during the initial design space exploration process. In this paper, we introduce an analytical frequency-dependent resistance model for integrated spiral inductors. Based on our resistance formulation, we have developed a systematic technique for creating wide-band circuit models for accurate time domain simulation. The analytical resistance model provides a fast alternative to field solver-based approaches with typical errors of less than 2.6 percent while surpassing the accuracy of several other analytical modeling techniques by an order of magnitude. Furthermore, the wide-band circuit generation technique captures the frequency-dependent resistance of the inductor with typical errors of less than 3.2 percent.     

A new formulation of fringing capacitance and its application to the control of parallel-plate electrostatic micro actuators

Though the effect of fringing field in electrostatic parallel-plate actuators is a well-understood phenomenon, the existing formulations often result in complicated mathematical models from which it is difficult to determine the deflection of the moving plate for given voltages and hence, they are not suitable for accurate actuation control. This work presents a new formulation for tackling the fringing field, in which the effect of fringing field is modeled as a variable serial capacitor. Based on this model, a robust control scheme is constructed using the theory of input-to-state stabilization (ISS) and backstepping state feedback design. This method allows loosening the stringent requirements on modeling accuracy without compromising the performance. The stability and the performance of the system using this control scheme are demonstrated through both stability analysis and numerical simulation.     

脉冲激光辐照皮肤组织的热效应数值模拟研究

具有一定强度的激光辐照皮肤组织时可造成组织的破坏.本文建立了激光辐照皮肤组织的二维热效应模型,并在柱坐标系下精确求解了高斯分布的激光脉冲辐照皮肤组织的热传导方程,得到瞬态温度场分布.研究结果表明:脉冲激光对皮肤组织的热损伤,最早发生在光束中心处,并沿着径向和轴向衰减,当脉冲激光辐照后一段时间,温度达到最大值时并不是发生在脉冲结束时,而是在脉冲结束后的一段时间内.脉冲激光辐照皮肤组织,激光能量密度起着决定性因素,焦斑半径也是影响作用效果的一个非常重要的参数.     

碳纳米管随机网络场效应晶体管电学性能分析

利用电子束蒸发技术在Si衬底形成Au电极作为底栅电极,在底栅电极上生长SiO₂薄膜。超声分散CVD法合成的商用单壁碳纳米管(SWCNTs),使用匀胶机将单壁碳纳米管悬浮液均匀旋涂于SiO₂薄膜上。再利用荫罩式电子束蒸发技术,在单壁碳纳米管随机网络薄膜表面制备漏源电极。该工艺过程避免了碳纳米管过多的化学接触,有效地保护了碳纳米管的性状。在室温条件下对器件电学性能进行测试和分析。使用该方法制备的单壁碳纳米管随机网络薄膜场效应晶体管,具有器件性能稳定、重复性和一致性较好等优点,并可用于构建碳纳米管逻辑电路。该方法对于研究基于碳纳米管的大规模、低成本的集成电路,具有较高的借鉴价值。     

深亚微米NMOSFETs总剂量辐射与热载流子效应研究

本文对深亚微米器件的总剂量辐射与热载流子效应进行了对比试验研究。结果表明虽然总剂量与热载流子效应在损伤原理上存在相似的地方,但两种损伤的表现形式存在明显差异。总剂量辐射损伤主要增加了器件的关态泄漏电流,而热载流子损伤最显著的特点是跨导与输出特性曲线降低。分析认为,STI隔离区辐射感生氧化物正电荷形成的电流泄漏通道是造成总剂量辐射后电流增长的根源,而栅氧化层的氧化物负电荷与栅界面态的形成是造成热载流子退化的原因。因此,对二者进行加固时应侧重于不同的方面。     

LD端面抽运变导热系数Nd:YAG晶体热效应

为了计算二极管抽运Nd:YAG晶体温度场及热形变场,建立了端面绝热、周边恒温的晶体热模型。基于Nd:YAG晶体导热系数及热形变系数与其温度的函数关系,应用Newton切线法对热传导方程进行求解,得到了变导热系数和变热形变系数矩形截面Nd:YAG晶体端面抽运下的温度场和热形变场的一般表达式,同时计算了Nd:YAG晶体在不同抽运功率和抽运光斑半径下内部温度场和热形变场的分布变化。结果表明,使用钕离子质量分数为0.01、尺寸为3mm×3mm×8mm的Nd:YAG晶体,在功率为60W、光斑半径为450μm的抽运光照射下,变导热系数的Nd:YAG晶体端面最大温升为55.7℃,最大热形变量为2.85μm,而按传统将Nd:YAG晶体导热系数、热形变系数均视为定值时,晶体端面最大温升为43.4℃,端面最大热形变为2.84μm。     

雷达微多普勒信号特征的原理与应用

目标的微多普勒信号特征表现为不同的复杂频率调制,它由目标部件产生,用联合时间-多普勒频域进行描述,可以揭示目标独特的特性。介绍雷达微多普勒效应的基本原理与应用,描述来自刚体和非刚体的微多普勒信号特征。文中还讨论雷达微多普勒特征的研究现状、面临挑战与未来前景。     

取代位置对香豆素衍生物二阶非线性光学性质影响的DFT研究

采用密度泛函理论（DFT）B3LYP/6-31G方法,对设计的6个不同位置取代氨基的香豆素衍生物的几何构型进行优化。在所得优化结构的基础上对这些分子的稳态二阶NLO系数β值进行计算分析,并采用含时密度泛函理论（TD-DFT）方法计算了其电子性质,研究了取代位置对香豆素类衍生物分子的二阶NLO性质的影响规律。结果表明：当氨基取代在4号位时香豆素分子中的羰基表现出供电性,对分子内电荷转移非常不利,不利于提高分子的β值;当氨基取代在在3、5、6、7、8位时分子中的羰基表现出吸电性,使分子形成D-π-A构型,并且氨基在3、7位的取代能够扩大体系的共轭范围,有效增加了香豆素分子的βtot值。