DYL高速视频12位DAC的研制

文中介绍了以我国独创的DYL多元逻辑电路为基础,并配合了申请国家发明专利的高速差动电压模拟开关构成的12位高速DAC转换器。同时解决了以往高速转换器输出阻抗、使用范围受限的缺点。同时对所研制的高速DAC在结构、工艺、修正技术及测试上进行了多方面的研究探讨。     

A low‐complexity single‐carrier frequency‐division multiple access transmitter

A framework for a computationally efficient single‐carrier frequency‐division multiple access (SC‐FDMA) transmitter is proposed in this paper. Compared with a wide system bandwidth, the uplink allocation for each user is supposed to be relatively small because of multiple user access, which makes each user's signal vector to be sparse. When the localized subcarrier allocation is used for SC‐FDMA, the inverse fast fourier transform can take advantage of the sparse user input vector to reduce its complexity. The analytical and simulation results show that the proposed framework can provide a significant complexity reduction compared with the conventional SC‐FDMA transmitter. Copyright © 2011 John Wiley & Sons, Ltd.     

Temperature effect on threshold voltage and optical property of twisted nematic liquid crystal with applied different voltages

In this paper, temperature-dependent birefringence theory of liquid crystal is used to investigate the temperature effect on the threshold voltage. An expression for describing the non-linear relationship between the threshold voltage and temperature is deduced. In addition, we theoretically discuss the temperature effect on the transmitted ratio of the namatic twisted liquid crystal without the applied voltage and with the applied voltage. It is found that the transmitted ratio is decreased linearly as temperature is increased when the liquid crystal is not applied with voltage, but the transmitted ratio is increased linearly as temperature is increased when the liquid crystal is applied with voltage. The threshold voltages and the transmitted ratio are measured at different temperatures. The experimental data are consistent with the theoretical calculated results.     

Real‐Time Measurement of the Size Distribution of Diesel Exhaust Particles using a Portable 4‐stage Electrical Low Pressure Impactor

For this study, a 4 stage electrical low pressure impactor was designed to measure the real‐time size distribution of diesel particulate matter (DPM). For the performance evaluation, sodium chloride (NaCl) particles and dioctyl sebacate (DOS) particles were used. After evaluating the collection efficiency of each stage of the impactor, the size distributions of test particles were estimated using electrical current data and their inversion algorithm, and this was found to agree with the results obtained by a scanning mobility particle sizer (SMPS). For measurement of DPM, a common‐rail direct injection (CRDI) diesel engine, for engine speeds of 1,200 rpm and 1,500 rpm at 2.7 kgf·m, was used. Therefore, it was found that the size distribution of the DPM could be easily obtained, with the currents measured by the impactor and the data inversion algorithm, in less than 5 seconds. Furthermore, the effective density of the DPM could be obtained using the calculated results and the SMPS data.     

早期干预对极低出生体重早产儿智能发育的影响研究

目的 探讨早期干预对极低出生体重早产儿智能发育的影响,为极低出生体重早产儿的早期干预提供依据。方法 239 例极低出生体重早产儿为早产随访组,采用鲍秀兰早期教育资料制定的干预计划,进行系统干预,并与326 例失访的早产儿童以及与随访组相似的326 例正常儿童进行对照分析。采用Gesell 儿童发育量表等标准化工具进行发育评估。结果 早产随访组Gesell 儿童发育量表5 项均分、总发育商（developmental quotient,DQ）总分与早产失访组相比差异均有统计学差异（均P＜0.05）。结论 早期干预能显著促进极低出生体重早产儿的智能发育,提高患儿的生活质量。     

一款高性能时钟驱动器电路的设计

时钟器件芯片可以实现通信网定时同步、时钟产生、时钟恢复和抖动滤除、频率合成和转换、时钟分发和驱动等功能。在系统设计中,选用好的时钟驱动芯片,可以省去系统时钟树设计,既节省空间,又提高系统性能。介绍一款高性能时钟驱动器的集成电路设计方法,主要性能要求有:低传播延时、低输出偏斜、低输出抖动、抗电磁干扰能力、抗ESD能力,一一详述了达到各项要求的设计。     

大电流电动汽车电池充电电流电压反馈系统设计

针对电动汽车厂家研发了电动汽车电池充电系统,设计了一种大电流低电压电池充电系统。系统采用了PIC16F877A单片机作为电子控制单元核心,对规格为50 A、3.7 V的电池组进行充电。重点对电流电压采样电路进行了设计和研究。通过建立采样电路的仿真模型。并用实际电压电流数据对本采样系统进行了验证。实验证明,系统提出的电流电压采样具有较高的精度、线性度,且能满足长期稳定运行的实际需求。     

雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.