RF 集成电路工艺探讨¹

射频集成电路的研究和制作将大大拓展集成电路的应用空间，本文介绍了当今RF的主流工艺，并分别对基于硅的深亚微米CMOS工艺在RF设计中的可行性和困难进行了研究，评述了其中存在的问题，最后提出了该领域中未来的发展前景。     

多级放大器噪声谱矩阵计算及在低噪声设计中应用

本文针对通信接收机噪声性能分析中广泛采用的弗里斯（Ｆｒｉｓ）公式在低噪声设计中的不足，提出了具有复相关系数的放大器Ｅｎ－Ｉｎ噪声模型的谱矩阵形式，推导了多级放大器的噪声谱矩阵计算公式。成功地解决了多级放大器噪声性能分析及低噪声设计必需的噪声参数（最佳源阻抗及最小噪声系数）计算。     

Phase Transformations in Fe–Mn Alloys Induced by Ball Milling

Hyperfine Interactions - We have studied the dependence on the milling time of the amounts of metastable fcc and hcp phases produced by ball milling on Fe-13.7 wt% Mn alloys by Mössbauer...     

Frequency offsets in frequency-locked semiconductor lasers

A commonly used technique for frequency locking a laser is dithering the laser frequency and monitoring the first derivative of the laser transmission through an absolute reference. In semiconductor lasers, this frequency dithering can be obtained easily by dithering the injection current. However, this dithering also modulates the laser output power. Here we show that this modulation of the laser output power results in an offset of the locked laser frequency from the reference frequency. We derive analytical expressions for these frequency offsets for semiconductor lasers frequency-locked to a Fabry-Perot transmission peak, a Gaussian absorption line, and a Lorentzian absorption line.     

利用气体吸收池光电流信号稳定InGaAsP半导体激光器频率

采用光吸收作用使放电气体吸收池电流改变，即“光电压”信号作为频率标准，对ＩｎＧａＡｓＰ长波长半导体激光器进行稳频。     

用计算机图像表现材料质地

文中阐述用计算机图像在现材料质地的实现方法，并介绍了作者开发的三线材质编辑器3DM-EDITOR。     

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results show that excessive arsenic atoms of about 10²⁰ cm⁻³ exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs. The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300°C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.     

短波碲镉汞光伏器件的低频噪声研究

对所研制的短波光伏碲镉汞器件进行了变温电流-电压特性和低频噪声研究，测试温度范围255—293K.实验结果表明随着温度的下降，器件的优值因子R₀A从45×10³Ωcm²增加到7×10⁴Ωcm².器件在低频区的主要噪 声成分是1/f噪声和产生-复合噪声，在高频区主要是散粒噪声.在测试的偏压内，器件的1/f噪声功率谱密度与流过器件的电流的平方成正比，器件的Hooge系数为3×10^-4—7×10^-4.从噪声 功率谱密度曲线分析中得到产生-复合噪声的特征时间常数τ，通过τ的温度特性得到了器件的深能级. 关键词： 碲镉汞 优值因子 低频噪声 深能级     

多芯片组件热阻技术研究

在传统单芯片封装热阻定义的基础上,针对多芯片组件(MCM)传统热阻表示方法的不足,基于线性叠加原理,采用有限元模拟技术,提出了MCM的结到壳的热阻表示方法——热阻矩阵,并利用有限元模拟方法对热阻矩阵进行了验证。结果表明,采用热阻矩阵方法预测器件结温的误差小于2%。     

宽带偏振不灵敏InGaAs半导体光放大器

采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构，研制了宽带偏振不灵敏的半导体光放大器．此放大器在100～250mA的工作电流范围内，获得了大于70nm的3dB光带宽；在0～250mA工作电流和3dB光带宽波长范围内，偏振灵敏度小于1dB．对于1.55μm的信号光，在200mA的注入电流下获得了15.6dB的光纤到光纤的增益、小于0.7dB的偏振灵敏度和4.2dBm的饱和输出功率．