电子自旋共振准三维图象的重建方法

根据投影切片原理, 设计了一个简单而有效的ESR图象重建算法和程序, 可利用样品的一集ESR谱, 方便地绘制出样品在某截面的自旋密度立体轮廓图、等值图和散点密度分布图等, 为分析和研究自旋密度的分布及其性质, 提供了直观依据。作为应用, 文中给出了石英杜瓦受紫外光辐照后产生的局部晶格缺陷——F心的空间分布图, 图中清楚表明, F心的浓度与辐照方向和辐照强度的密切关系, 与试验结果完全相符。     

n型砷化镓微区光电化学腐蚀过程

在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.     

Photochemical Synthesis and Spectral-Optical Characteristics of ZnO/Cu and ZnO/Ag/Cu Nanoheterostructures

The photoreduction of Cu²⁺ at the surface of ZnO nanoparticles and ZnO/Ag nanostructures was investigated. The spectral characteristics of the obtained ZnO/Cu and ZnO/Ag/Cu composites were studied in relation to the reaction conditions. It was shown that the ZnO/Ag nanoparticles have higher photocatalytic activity in the reduction of Cu²⁺ ions than the individual ZnO particles.     

双功能催化剂体系作用下乙烯二聚和共聚合的研究

用乙烯为原料在双功能催化剂体系的作用下通过二聚和共聚合反应，直接合成线性低密度聚乙烯（ＬＬＤＰＥ）．所用二聚反应催化剂为钛酸正丁酯（Ｔｉ（ＯＢｕ）_４），共聚催化剂为ＴｉＣｌ_４／ＭｇＣｌ_２（ＺＭ－１催化剂）．研究了二聚反应动力学行为及影响双功能催化剂体系动力学过程的一些因素．结果表明利用这两种催化剂组成双功能催化剂体系能够很方便地制得密度范围在０．９０－０．９３，Ｅｔ／１０００Ｃ在１０－４０的ＬＬＤＰＥ．     

K~+-FREE INDUCED EARLY AFTERDEPOL-ARIZATION IN CARDIAC VENTRICULAR FIBERS OF GUINEA PIG AFTER COLD TREATMENT

The genesis and elimination of early afterdepolarizations (EADs) have been investigated in guinea pig cardiac ventricular fibers after a short period of cooling (5h, 2—4℃). After rewarming them to 37℃, EADs could be induced by K~+-free superfusion at an appropriate driving stimulation (0.2 Hz) in all preparations. A high level plateau, which linearly increases its duration with time, appears ahead of EADs. The critical point of the plateau occurred steadily at the level of -47±4 mV. Two types of triggered activity, all of which are the rhythmic activities in low level of membrane potential (-50 to -60 mV), appear on the platcau. There is no significant change after overdriving. Agonists of the Na-K pump (K~+ and Tl~+) could stop the rhythmic activity immediately and turn the low level of membrane potential to high one. The results showed that high level plateau is the basis of genesis of EADs, and the activation of Na-K pump plays an important part in stopping triggered rhythms arising from EADs.     

单分散纳米InVO4(正交相)的低温合成

InVO₄ is a new developed visible light responding photocatalyst for water decomposition, which is obtained by a solid-state reaction at high temperature traditionally. In this paper, pure InVO₄ nano-crystalline powder has been prepared by a hydrothermal process at low temperature and was characterized by TEM, IR, and X-ray diffraction. Many factors such as pH value, reaction time and temperature have been investigated. It is found that the optimal conditions for the preparation is: n_InCl3∶n_NaVO3=1∶2; temperature : 150 ℃; Reaction time: 4～8 h; pH=7.9～8.0. And the experimental result shows that it is a convenient way to get single dispersing InVO₄ nano-crystalline powder by flux in alkyl alcohol.     

Investigation of glow discharge plasma for surface modification of polypropylene

Material surface properties of polymers, plastics, ceramics and textiles can be modified by atmospheric or low‐pressure glow discharge plasma. The aim of the present work is to study the surface modification of biaxially oriented polypropylene (BOPP) film in order to improve its hydrophilic and wetting properties. In this article we used low‐pressure, low‐temperature oxygen plasma for the surface treatment of BOPP. Scanning electron microscopy indicates that plasma treatment causes mainly physical changes by creating microcraters and roughness on the surface and increasing surface friction. Attenuated total reflectance infrared spectra show oxygen‐containing groups such as ? OH at 3513 cm^?1 and C?O at 1695 cm^?1. Microscopic investigations of water droplets on BOPP (treated, untreated) show that the interfacial adhesion of treated surfaces is increased. Copyright © 2003 John Wiley & Sons, Ltd.     

低硫可膨胀石墨的制备

低硫可膨胀石墨的制备宋克敏，路文义，高淑英，阎秋燕（河北教育学院石家庄０５００９１）关键词低硫可膨胀石墨，制备，过氧化氢，硫酸柔性石墨具有耐高温、耐酸碱、抗拉、抗压、抗辐射、回弹性等优良性能，被广泛应用于化工、机械、肮天、原子能等领域。但其原材料可膨...     

Nanowire‐Based Electrochemical Biosensors

We review recent advances in biosensors based on one‐dimensional (1‐D) nanostructure field‐effect transistors (FET). Specifically, we address the fabrication, functionalization, assembly/alignment and sensing applications of FET based on carbon nanotubes, silicon nanowires and conducting polymer nanowires. The advantages and disadvantages of various fabrication, functionalization, and assembling procedures of these nanosensors are reviewed and discussed. We evaluate how they have been used for detection of various biological molecules and how such devices have enabled the achievement of high sensitivity and selectivity with low detection limits. Finally, we conclude by highlighting some of the challenges researchers face in the 1‐D nanostructures research arena and also predict the direction toward which future research in this area might be directed.     

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−E_v)-(0.79−E_v) eV taking into account the forward bias I-V data. The interface state density N_ss ranges from 4.93×10¹⁰ cm⁻² eV⁻¹ in (0.79−E_v) eV to 3.67×10¹³ cm⁻² eV⁻¹ in (0.53−E_v) eV. Furthermore, the relaxation ranges from 3.80×10⁻³ s in (0.53−E_v) eV to 4.21×10⁻⁴ s in (0.79−E_v) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap.