Assessment of thermal expansion coefficient of methylsilsesquioxane thin film

For the methylsilsesquioxane film whose optical birefringence is almost zero, it was recently reported that its vertical thermal expansion coefficient (CTE) was approximately one order of magnitude larger than the lateral CTE. Though the birefringence is not an absolute predictor of anisotropic behavior, the discrepancy in both the CTEs was so remarkable that it was essential to investigate whether the anisotropy was intrinsic property or not. If the effect of Poisson's ratio is considered in the calculation of the vertical CTE and when elastic modulus measured by surface acoustic wave spectroscopy is used in the assessment of the lateral CTE, both the CTEs are coincident with each other. Therefore, it can be concluded that the discrepancy in the CTEs can be attributed to a higher in‐plane polymer chain orientation but it can also arise from the misleadingly assumed modulus and Poisson's ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3109–3120, 2006     

Asymptotic analysis of elastic curved rods

We consider a sequence of curved rods which consist of isotropic material and which are clamped on the lower base or on both bases. We study the asymptotic behaviour of the stress tensor and displacement under the assumptions of linearized elasticity when the cross‐sectional diameter of the rods tends to zero and the body force is given in the particular form. The analysis covers the case of a non‐smooth limit line of centroids. We show how the body force and the choice of the approximating curved rods can affect the strong convergence and the limit form of the stress tensor for the curved rods clamped on both bases. Copyright © 2006 John Wiley & Sons, Ltd.     

Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

微波BJT超宽带低噪声放大器的设计

本文给出了一种频带覆盖达１０－１６００ＭＨｚ的微波ＢＪＴ超宽带低噪声放大器的设计方法，从微波ＢＪＴ的噪声模型出发，通过拟合５０Ω源阻抗下微波ＢＪＴ的噪声系数ＮＦ５０和Ｓ参数来提取其噪声参数，然后根据增益，噪声及驻波比要求优化设计放大器，使放大器在超宽带范围内获得平坦增益和低噪声，本文所给出的微波ＢＪＴ惨数提取及放大器优化设计方法已由实验结果所验证。     

A 24-GHz Patch Array with a Power Amplifier/Low-Noise Amplifier MMIC

This paper presents an active patch array designed at 24 GHz. It can be used as a front-end component for a phased array. A series resonant array structure is chosen which is compact and easy excite. With 5 elements, the array proved a 12-dB antenna gain. A power amplifier and a low noise amplifier are designed on a single GaAs chip (PALNA). Bias switch is used in the PALNA, which greatly reduces the switch loss in a transceiver and increases the efficiency. 20-dB small signal gain is achieved in both power amplifier and low noise amplifier. The active patch array is built by the combination of the patch array and PALNA. The measured active gain of this antenna is 35-dB for the PA mode and 31-dB for the LNA mode. This active patch array can obtain an EIRP of 34 dBm with a total radiated power of 22dBm and a maximum PAE of 32%. To check the noise performance, we applied sources at both normal temperature and 77K (liquid nitrogen) and extracted the noise figure (3.5 dB) of the active antenna by the Y factor method. The results proved that the active antenna is working efficiently as both a transmitting and receiving antenna.     

群时延精确设计的全差分四阶Bessel滤波器

采用MOS管有源电阻,提出了一种全差分R-MOSFET-C四阶Bessel有源低通滤波器,.通过调节工作于亚阈值区的CMOS管的沟道导纳补偿电阻值的大小,能抵消集成电路制造工艺中电阻值的一致偏差,实现Bessel有源滤波器群时延的精确设计.根据无源滤波器的状态方程完成有源滤波器的综合,应用3.3V,0.5μm CMOS工艺完成了群时延大小为0.75μs的四阶Bessel低通滤波器的管极计算机仿真,仿真结果表明所提电路正确有效,适于全集成.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

铜互连中SiCOF/a-C∶F双层低介电常数薄膜的制备和表征(英文)

用等离子体化学气相淀积系统制备了一种新颖的SiCOF/a-C∶F双层低介电常数介质薄膜,并用红外光谱表征了该薄膜的化学结构.通过测量介质的折射率发现该薄膜长时间暴露在空气中,其光频介电常数几乎不变.然而,随退火温度的增加,其光频介电常数则会减小.基于实验结果讨论了几种可能的机理.二次离子质谱分析表明在Al/a-C∶F/Si结构中F和C很容易扩散到Al中,但在Al/SiCOF/a-C∶F/Si结构中,则没有发现C的扩散,说明SiCOF充当了C扩散的阻挡层.分析还发现在SiCOF和a-C∶F之间没有明显的界面层.     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.