低电平扫描电流高强辐射场试验方法研究

低电平扫描电流试验(LLSC)是飞机高强辐射场(HIRF)试验的一部分,其实质是在2~400 MHz 频段 内对飞机进行电磁辐照,以确定外部HIRF 环境与设备线束感应电流之间的传递函数。基于RTCA/ DO-160G 和SAE ARP5583A 标准建立HIRF 测试环境,通过对AC312E 直升机开展低电平扫描电流试验,得到了线束传递函数随频 率、天线极化方式、电磁辐照方向、线束布置的变化规律并分析了其影响机理。结果表明:发射天线以不同极化方式 辐照机体时,不同布置的线束其传递函数有一定差别;发射天线以垂直极化在0°方向辐照时,行李舱附近右发动机 控制单元(EECUR)线束的传递函数比位于驾驶舱的座舱显示器(MFD)线束的传递函数要小;发射天线以垂直极化 方式在不同方向辐照机体时,EECUR 线束在某些频段下在右侧90°方向辐照比左侧270°方向辐照的传递函数要大。 所得结论可为直升机适航符合性验证和低电平扫描电流试验的开展提供参考与支撑。     

Polyether-b-Amide Based Solid Electrolytes with Well-Adhered Interface and Fast Kinetics for Ultralow Temperature Solid-State Lithium Metal Batteries

Solid-state lithium metal batteries (SSLMBs) are highly desirable for energy storage because of the urgent need for higher energy density and safer batteries. However, it remains a critical challenge for stable cycling of SSLMBs at low temperature. Here, a highly viscoelastic polyether-b-amide (PEO-b-PA) based composite solid-state electrolyte is proposed through a one-pot melt processing without solvent to address this key process. By adjusting the molar ratio of PEO-b-PA to lithium bis(trifluoromethanesulphonyl)imide (ethylene oxide:Li = 6:1) and adding 20 wt.% succinonitrile, fast Li⁺ transport channel is conducted within the homogeneous polymer electrolyte, which enables its application at ultra-low temperature (−20 to 25 °C). The composite solid-state electrolyte utilizes dynamic hydrogen-bonding domains and ion-conducting domains to achieve a low interfacial charge transfer resistance (<600 Ω) at −20 °C and high ionic conductivity (25 °C, 3.7 × 10⁻⁴ S cm⁻¹). As a result, the LiFePO₄|Li battery based on composite electrolyte exhibits outstanding electrochemical performance with 81.5% capacity retention after 1200 cycles at −20 °C and high discharge specific capacities of 141.1 mAh g⁻¹ with high loading (16.1 mg cm⁻²) at 25 °C. Moreover, the solid-state SNCM811|Li cell achieves excellent safety performance under nail penetration test, showing great promise for practical application.     

Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In-Sensor Neuromorphic Computation

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single-element image sensors that allow reception of information and execution of in-memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra-thin (<3 nm) doped indium oxide (In₂O₃) layers are engineered to demonstrate a monolithic two-terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof-of-concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real-time, in-sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.     

Ultraefficient Non-Doped Deep Blue Fluorescent OLED: Achieving a High EQE of 10.17% at 1000 cd m−2 with CIEy<0.08

The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m⁻² with a Commission International de L'Eclairage (CIE_y) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m⁻², and even at a brightness as high as 10000 cd m⁻², an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m⁻². The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m⁻². Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen.     

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low-Dimensional Semiconductors

Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low-dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light-matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two-terminal neuromorphic memristors, three-terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low-dimensional materials is prospected.     

A Low-Hysteresis and Highly Stretchable Ionogel Enabled by Well Dispersed Slidable Cross-Linker for Rapid Human-Machine Interaction

Ionic conductive soft materials for mimicking human skin are a promising topic since they can be thought of as a possible basis for biomimetic sensing. In pursuit of devices with a long working range and low signal delay, conductive materials with low hysteresis and good stretchability are highly demanded. To overcome the challenges of highly stretchable conductive materials with good resilience, herein a chemical design is proposed where polyrotaxanes act as topological cross-linkers to enhance the stretchability by sliding-induced reduced stress concentration while the compatible ionic liquid is introduced as a dispersant for low hysteresis. The obtained ionogels exhibit versatile properties more than low hysteresis (residual strain = 7%) and good stretchability (550%), and also anti-fatigue, biocompatibility, and good adhesion. The low hysteresis is attributed to lower energy dissipation from the well-dispersed polyrotaxanes by compatible ionic liquids. The mechanism provides a new insight in fabricating highly stretchable and low-hysteresis slide-ring materials. Furthermore, the conductivity of the ionogels and their responses to strains and temperatures are measured. Benefiting from the good conductivity and low hysteresis, the ionogel is applied to develop a wireless communication system to realize rapid human-machine interactions.     

Spring-Like Ammonium Salt Assisting Stress Release for Low-Temperature Deposited FAPbI3 Films Toward Flexible Photovoltaic Application

The substrates of conventional flexible perovskite solar cells (FPSCs) are thermoplastic polymer material polyethylene naphthalate (PEN), which will deform during high temperature annealing process. In addition, lead iodide (PbI₂) permanently formed and the substrate undergoes reversible deformation from 20 °C to 200 °C and back to 20 °C. Therefore, to balance the substrate supporting capacity and the crystalline quality of narrow band gap α-phase formamidinium lead iodide (α-FAPbI₃), an annealing process of 120 °C for 30 minutes is determined. Additionally, there will also be a large number of gaps and lattice strain at the perovskite grain boundaries during the annealing process as the FAPbI₃ phase transition is accompanied by much lattice shrinkage. As a result, 1,6-hexanediammonium diiodide (HADI) is chosen to passivate the defects and release the stress of perovskite film. Therefore, a recorded 1.4% extended stretch rate of the flexible film is attained. Finally, the champion PCE of 21.14% under AM 1.5G and 31.52% under 1062 lux is achieved after HADI treatment, accompanied by a better long-term and mechanical stability. This study provides annealing process optimization and stress relief strategies for the further development of narrow band gap FPSCs.     

5G毫米波通信用低插损高隔离GaAs PHEMT单刀双掷开关

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,实现了一款用于5G毫米波通信的低插损高隔离单刀双掷(SPDT)开关芯片。为了降低插损,每个开关支路通过四分之一波长阻抗变换器连接到天线端,并通过优化传输线和器件总栅宽实现了良好的端口匹配;为了提高隔离度,采用了三并联多节枝的分布式架构形成高的输入阻抗状态,实现信号的全反射。芯片面积为2.1 mm×1.1 mm。在片测试结果显示,在24.25~29.5 GHz的5G毫米波频段内该SPDT开关实现了小于1.1 dB的极低插损和大于32 dB的高隔离度,1 dB压缩点输入功率大于26 dBm。     

小型化低功耗机载显示器图形系统设计与实现

为了满足机载显示器图形生成系统的小尺寸、低功耗需求,提出了一种基于龙芯2K1000的全国产图形生成与处理方案。该方案以2K1000为核心构建硬件平台,使用2K1000内部集成的中央处理器、图形处理器、显示控制器,以及外部的内存实现图形的计算生成和双缓存显示,配合国产可编程逻辑器件实现图形与外视频的叠加显示及机载通信总线扩展。软件上采用航空专用的国产天脉操作系统,基于天脉操作系统设计了关键的图形显示驱动、帧存驱动、显示控制器驱动。实验结果表明,在输出1 024 pixel×768 pixel分辨率显示时,典型机载图形画面帧率达到35 frame/s,整体功耗约10 W。该方案扩展性强、功耗低,满足实时显示需求,在机载显示器领域有着广泛的应用空间。     

低温环境下FBG温度传感特性研究

在低温环境中,光纤光栅(Fiber Bragg Grating,FBG)材料的热膨胀系数和热光系数会发生改变,从而影响其温度传感特性。文章通过实验研究了裸光纤光栅传感器和黄铜管封装的光纤光栅传感器在低温下的温度传感特性。结果表明,在80~300 K温度范围,裸FBG温度传感器的灵敏度为6.43 pm/K,线性度为0.974,在80~230 K温度范围,温度与光纤光栅的中心波长呈现非线性关系;黄铜管封装的FBG温度传感器,在整个温度范围内灵敏度可达26 pm/K,线性度为0.996,较裸FBG温度传感器均有较大提升。对比实验表明,对光纤光栅进行封装,可以提高其温度灵敏度和线性度,改善温度传感特性。