LIMITED MEMORY BFGS METHOD FOR NONLINEAR MONOTONE EQUATIONS

In this paper, we propose an algorithm for solving nonlinear monotone equations by combining the limited memory BFGS method （L-BFGS） with a projection method. We show that the method is globally convergent if the equation involves a Lipschitz continuous monotone function. We also present some preliminary numerical results.     

EPON+LAN与EPON+EoC接入方式的选择

介绍了EPON系统与EoC的组成及原理,以此引申出EPON+LAN、EPON+EoC的技术模型,通过EPON+LAN与EPON+EoC的技术对比,根据其优缺点,结合双向网络建设的实际情况,分析双向网络改造中对EPON+LAN与EPON+EoC接入方式的选择。     

基于时间约束的优化编码传输算法

考虑到对数据包延迟等服务质量要求比较高的流媒体应用,文章研究了在有记忆接收节点模型也即接收节点可以缓存多个数据包的前提下,数据包有延迟约束的无线网络中基于网络编码的广播调度问题,目标在于最小化超过延迟约束数据包的数目。本文提出一种利用着色图的方法来进行编码调度的算法,可以显著减少超过延迟约束数据包的数目,为以后针对QoS需求的网络编码问题提供了参考。模拟实验表明相比于接收节点丢弃暂时无用数据包的无记忆模型,在有记忆模型下我们的算法可以在很多情况下有效地降低超出延迟约束率,这对时间关键的应用非常重要。     

一种专用网络管理平台的设计思路

文中分析了网络管理平台的现状、发展趋势和特点.根据笔者的实践从网络管理平台的体系结构与组成,模块之间的通信和二次开发工具等方面,给出了一种专用网络管理平台的设计思路;阐述了实现网络管理平台的3个关键技术:平台体系结构技术、网络管理协议适配技术和网管信息呈现技术关键技术.目前,该设计方案已经应用于多个项目中.     

高压静电场促进植物生长技术的研究

高压静电场促进植物生长技术源于自然又高于自然 ,它包括静电种子处理和静电场生长环境等技术 .文章论述了该技术的实施方法 ,并报道了已经取得的初步成果 .     

基于邻居节点平均距离的网络覆盖判别模型

在 SITE(信息技术与工程学院)算法基础上,提出了 ADDM(基于邻居节点平均距离的网络覆盖判别模型)算法,通过计算所有邻居节点与本节点的平均距离和交叠区域的圆心角来判别该节点是否为冗余节点。理论分析与仿真实验表明,AD-DM算法较大地改善了 SITE算法,成功解决了 SITE算法没有考虑距离大于感知半径的节点对覆盖冗余贡献的问题,从而用更少的节点实现了区域的覆盖,节省了网络节点的活动数目,延长了网络的生存时间。     

口述史作为社区研究的方法

口述史在社会学中的意义,不仅在于可以通过口述记忆研究个人在大叙事中的生命沉浮,更在于它提供了深挖人的精神世界的社会性的方法。其主要研究对象,可称之为记忆社区的问题。记忆社区至少包括三个维度：地点、时间和人物。它以个人的口述为起点,基于人的生命实践,富含主体性和情感性特征,但其勾勒出的是一个囫囵的整体,有极强的社会性特征,蕴含丰富的社会和文化意义。口述记忆中的文化是一种经由个体化实践而感悟出的文化感,家庭中的“义务感”是它的一个典型形式,其表现为社会力的方式,成为黏合社区的重要机制。记忆社区本质上是人和物的混融,它呈现的社区形象是一个有机整体。口述史能够作为社区研究方法,不仅在于它呈现了独特的记忆社区,还在于指明了社会建设和基层社会治理的深层机制,这便是从人心的角度,揭示了人之安所遂生的社区力量。记忆社区概念提醒我们,历史上积淀下来的社区文化和社会底蕴是值得探究和善用的凝聚社区的相对稳固的机制。     

Nonvolatile memory devices based on self-assembled nanocrystals

Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such as laptop computers, tablet devices, smart phones, etc. Among the many available nonvolatile memory devices, flash memory devices are of great interest to the electronics industry owing to their simple device structure, enabling high-density memory applications. Flash memory devices in which nanoparticles or nanocrystals are used as the charge-trapping elements have advantages over conventional flash memory devices because the charge-trapping layer and memory performance of the former can be readily optimized. Active research has recently been conducted to fabricate and characterize self-assembled-nanocrystal-based nonvolatile memory devices. We reviewed various strategies for fabricating nanocrystal-based nonvolatile memory devices and discussed the programmable memory properties and the device reliability characteristics of nanocrystal-based memory devices to possibly apply nanocrystal-based memory devices to those used in portable/mobile electronic devices. Finally, novel device applications such as printed/flexible/transparent electronic devices were explored based on nanocrystal-based memory devices.     

Phase change memory alloys: GST cell array characterization using picosecond ultrasonics

Phase change random access memory alloys (PRAM or PCM) are a class of non-volatile memory that is thought as viable alternatives to flash memory technology or to supplement other memory technologies depending on the end applications and its key performance requirements. Ge₂Sb₂Te₅ alloy (GST) is the most widely used chalcogenide material for PCM application, and has many unique properties, including strong temperature-dependent film properties, low thermal conductivity, and high electrical resistivity. Picosecond ultrasonics was used to make non-contact, non-destructive measurements of GST films on blanket wafers and directly on product wafers. On-product wafer measurements were made on various via array (0.5 μm and 1 μm between cell edges with CD size from 250 to 800 nm). Measurements have shown excellent correlation to cross-section SEM and were consistent with CMP polish times for both blanket and pattern wafer measurement. Excellent repeatability based on extensive measurements demonstrates the capability and reliability of picosecond ultrasonic technology. Picosecond ultrasonic measurements also provide rapid characterization across the whole wafer at production-worthy throughputs.     

高负载环境下基于Linux系统的防火墙软中断性能改善研究

当网络负载增大到一定程度后,基于Linux防火墙的数据转发性能开始下降。最常见的瓶颈是系统软中断在单一CPU上耗用达到100％。本文对这一问题进行了分析并提出了一种易于实现且性能改善明显的解决方案。