厄米-双曲余弦-高斯光束的瞄准稳定性

用失调叠加积分的方法 ,对厄米双曲余弦高斯光束的瞄准稳定性作了研究 ,得到了厄米双曲余弦高斯光束失调因子 ηm2 的精确解析公式和近似解析公式 ,并用数值计算了相对横向偏移和相对角向偏移对失调因子ηm2 的影响以及对精确解析公式和近似解析公式的适用范围作了分析和说明。     

基于DFT插值的宽带波束形成器设计

本文提出一种基于DFT插值的宽带波束形成器设计方法。首先推导了具有频率不变波束图的连续线阵的灵敏度函数与离散线列阵加权系数之间的关系；接着给出了基于DFT插值的宽带波束形成器设计的两个步骤：（1）使用窄带波束形成器的设计方法计算在参考频率下基阵的加权系数；（2）根据参考频率下基阵的权系数与其它子带权系数之间的关系，利用DFT插值的方法求出其它子带的加权系数。最后，给出了一个设计实例说明本文方法的有效性。     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

纯铜双层辉光离子渗钛组织形成机理及性能分析

采用双层辉光离子渗金属技术对纯铜进行了渗钛处理。用配有能谱仪(EDS)的扫描电子显微镜(SEM)、X射线衍射仪和透射电子显微镜对合金层的显微组织形貌、钛含量分布、相组成及相结构类型进行了观察与测定，对合金层的形成机理进行了探讨，并对其性能进行了对比测定。结果表明：渗钛层由合金层和扩散层组成，合金层主要由TiCu (Cu)固溶体 TiCu4构成，TiCu4为Dla型有序相，TiCu为B2型有序相，扩散层为(Cu)固溶体。渗钛处理后纯铜的表面得到显著强化。     

离子束引起的在Al／Cr双层薄膜界面处的原子混合

用600keV的Kr~ 离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。实验样品是在单晶硅上蒸镀约500nm厚的铝膜,相继再蒸上所需厚度的铬膜而制成的。轰击剂量为2.0×10~(15)-2.5×10~(16)Kr~ /cm~2。用2.0MeVa粒子对轰击前后的样品进行了卢瑟福背散射(RBS)分析,发现界面处有明显的原子混合存在;当轰击剂量≥1.0×10~(16)Kr~ /cm~2时,RBS谱出现有明显的坪台,经拟合计算和x射线衍射(XRD)测量证实确有化合物Al_(13)Cr_2存在;还分别得到了原子混合量及混合效率与轰击剂量的关系;最后对界面处的原子混合机制进行了讨论。     

A generalized Adadorov theory for anisotropic thin-walled beams

This paper presents a generalized Adadorov theory for anisotropic thin—walled beams. The theory takes account of the shear strain of the middle surface, which exerts a significant influence on the anisotropic thin-walled beams. A new approach is established to solve the governing equations, which have the same form for both open and closed section beams. The numerical examples show that the effects of the shear strain cannot be neglected for this class of beams.This work was part of research project supported by the National Natural Science Foundation of China     

振动系统的模态分析实验设计

利用模态分析原理和简单试验仪器，得到了直观的悬臂梁和圆盘前4阶模态振型，使学生熟悉了模态分析原理和测试方法，有利于学生对振动规律的理解．     

UNIFORM CONVERGENCE OF CESARO MEANS OF NEGATIVE ORDER OF DOUBLE TRIGONOMETRIC FOURIER SERIES

In this paper we prove that iff ∈ C([-π,π]2) and the function f is bounded partial p-variation for some p ∈ [1, ∞), then the double trigonometric Fourier series of a function f is uniformly (C;-α,-β) summable (α β＜ 1/p,α,β＞ 0) in the sense of Pringsheim. If α β≥ 1/p, then there exists a continuous function f0 of bounded partial double trigonometric Fourier series of fo diverge over cubes.     

Decentered twisted Gaussian Schell-model beams and their propagation through a misaligned first-order optical system

The propagation properties of decentered twisted Gaussian Schell-model (DTGSM) beams passing through a misaligned first-order optical system are studied. The explicit expressions for the cross-spectral density function and Wigner distribution function of the output beam are derived, which retain their form unchanged. It is shown that the DTGSM beams preserve their closed property. The second-order moments matrix and the Wigner distribution function evolve with the usual laws, whereas the first-order moments matrix varies, as if a ray passes through such system. The propagation of DTGSM beams through an aligned first-order optical system is treated as the limiting case that corresponds to the vanishing misalignment parameters.     

MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy

MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2¯]_MgO(0 0 1)[1 0 0]_YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]_MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.