超短脉冲贝塞尔光束的非近轴效应对传输的影响

 对超短脉冲贝塞尔光束在近轴近似和非近轴情况下自由空间中的传输作了研究。结果表明，其空间波形在传输中保持贝塞尔形状不变，不受非近轴效应影响；然而当空间参数较大时，非近轴效应影响超短脉冲贝塞尔光束的时间波形。     

Dynamic boundary stabilization of a Reissner–Mindlin plate with Timoshenko beam

This paper is concerned with well‐posedness results for a mathematical model for the transversal vibrations of a two‐dimensional hybrid elastic structure consisting of a rectangular Reissner–Mindlin plate with a Timoshenko beam attached to its free edge. The model incorporates linear dynamic feedback controls along the interface between the plate and the beam. Classical semigroup methods are employed to show the unique solvability of the coupled initial‐boundary‐value problem. We also show that the energy associated with the system exhibits the property of strong stability. Copyright © 2004 John Wiley & Sons, Ltd.     

High power CW solid-state multilaser system

A laser system containing four CW Nd:YAG double-rod lasers, transforming optics and a fibre with input-output optics has been designed and investigated. It is shown that reduction of the beam parameter product of the non-Gaussian beams in the image space of the lens has made it possible to collect the emission of four lasers to the same fibre. Independent laser operation has provided the output power control in the range of 10–900 W with a stable light spot size on the input end of the fibre.     

用单透镜变换由多模光纤出射的大功率Nd：YAG激光束的特性

根据理论假设，通过选取单透镜的参数和位置，计算说明了单透镜使经由多模光纤出射的大功率Ｎｄ：ＹＡＧ激光束的发射角压缩，光束聚焦效率提高，光束截面场为高斯分布；文中的计算结果符合已知规律，从而说明了理论假设的正确性。     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

高功率激光器的光束质量及其对激光加工的影响

本文介绍了光束的模式、评价光束质量的几种方法,着重介绍了国际标准化组织(ISO)提出的光束传输系数M作为评价光束质量的方法。文中还讨论了光束质量对焊接、切割加工的影响;热透镜效应对加工的影响等。     

一种新型的二元光学器件——多位相光束分束器的制作

本文报道了用于多光束分束器的反射式16位相值二元光学器件的制作。该二元光学器件把一束光束分成5×5光束阵列。测量的衍射效率为76.16%,接近理论设计值79.68%。该二元光学器件的有效孔径为10mm×10mm。     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm

We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB.