InGaN基高压LED和传统大功率LED的发光效率比较

主要从三个不同角度探究并分析了基于In Ga N材料的高压LED的发光效率优于传统大功率LED的原因。为了保证实验结论的可靠性,文中所采用的实验样品具有相同的芯片尺寸和材料以及相同的封装结构。经过大量的实验证明,更均匀的电流分布和小芯片间隙的出光,使得高压LED的发光效率优于传统大功率LED。结果显示,在相同的1 W输入功率下,高压LED的发光效率比传统大功率LED高大约4.5%。     

High-speed low-power voltage-programmed driving scheme for AMOLED displays

A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N-1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors(5T2C). In-Zn-O thin-film transistors(IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames(N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits.     

玻璃衬底上制备GaN薄膜的研究进展

近年来,GaN基发光二极管(LED)的发展异常迅速,以玻璃为衬底的LED具有成本低、可大面积化生产等优点而引起了国内外许多科研机构的广泛研究兴趣.但由于普通玻璃较低的软化温度(500～ 600℃)以及与GaN之间存在较大的晶格失配问题,一直阻碍其发展.重点综述了玻璃衬底上生长GaN薄膜的方法以及改善外延层晶体质量的技术.分别介绍了两种在普通玻璃上生长GaN的方法,即低温生长和局部加热生长,同时详述了采用缓冲层和横向外延过生长(ELO)技术对外延GaN晶体质量的影响.对局部加热、ELO等技术在玻璃衬底LED方面的应用进行了分析和预测,认为以玻璃为衬底的LED终会取得快速地发展.     

半导体量子点在白光LED中涂覆厚度的确定

在蓝光LED上涂覆黄光量子点是合成白光LED的重要方法之一,确定量子点的涂覆厚度是合成白光的一个关键步骤。引入厚度系数来模拟厚度,证明了一定厚度范围内,厚度系数与厚度的线性关系。根据光谱的线性叠加以及能量守恒定律,建立数学模型,编程计算,结合实验,确定量子点厚度。按照模拟计算得到的厚度涂覆LED芯片,即可获得白光LED。本方法可以为实际生产提供指导,提高生产效率。     

含镁多元合金阴极绿色磷光有机电致发光器件

为进一步提高有机电致发光器件(OLED)电子载流 子的注入水平,简化制备工艺,采用Ca:Mg:Al三元合金作为OLED阴极,制备了结构为ITO/Mo O₃/NPB/TCTA/CBP:GIr1/TPBi/Alq₃/Mg(x%):Ca:Al的绿色磷 光OLED,分析了Mg在提高器件电子注入水平、平衡载流子浓度中的作 用及其原理。实验通过优化合金阴极中Mg的含量,得到了亮度为41830cd/m²、电流效率稳定在26cd/m²左右的高效稳定的绿色磷光O LED。     

Rational design of donor–π–acceptor n-butyl-1,8-naphthalimide-cored branched molecules as charge transport and luminescent materials for organic light-emitting diodes

Four D–π–A bipolar molecules with n-butyl-1,8-naphthalimide (BNI) fragments as acceptors, acetylenes as π-spacers, and different aromatic groups as donors have been designed to explore their optical, electronic, and charge transport properties as charge transport and luminescent materials for organic light-emitting diodes (OLEDs). The frontier molecular orbitals (FMOs) and local density of states analysis have turned out that the vertical electronic transitions of absorption and emission are characterized as intramolecular charge transfer (ICT). The calculated results show that their optical and electronic properties are affected by the different donors of the bipolar molecules. Our results suggest that D–π–A 1,8-naphthalimide derivatives with donors triphenylamine (1), 1-nitrobenzene (2), anisole (3), and 4-phenylbenzo[c][1,2,5]thiadiazole (4) fragments are expected to be promising luminescent materials. Furthermore, 2–4 are expected to be promising candidates for both electron and hole transport materials as well as potential ambipolar charge transport material, whereas BNI and 1 can serve as hole transfer materials only. We have also predicted the mobility of 4 with better performance in three different space groups. On the basis of investigated results, we proposed a rational way for the design of charge transport and/or luminescent materials simultaneously.     

Synthesis,Aromaticity, and Application of peri-Pentacenopentacene: Localized Representation of Benzenoid Aromatic Compounds

We report the synthesis and optoelectronic properties of TIPS-peri-pentacenopentacene ( TIPS-PPP ), a vertical extension of TIPS-pentacene ( TIPS-PEN ) and a low-band-gap material with remarkable stability. We found the synthetic conditions to avoid the competition between 1,2- and 1,4-addition of lithium acetylide on the large aromatic dione. The high stability of TIPS-PPP is due to the peri-fusion which increases the aromaticity by generating two localized aromatic sextets that are flanked with 2 diene fragments, similar to two fused-anthracenes. Like TIPS-PEN , TIPS-PPP shows the archetypal 2D brickwall motif in crystals with a larger transfer integral and smaller reorganization energy. The high mobility of up to 1 cm² V^?1 s^?1 was obtained in an organic field-effect transistor fabricated by a wet process. Also, TIPS-PPP was used as a near-infrared (NIR) emitter for NIR organic-light-emitting-diode devices resulting in a high external quantum efficiency at 800 nm.     

Crosslinking Super Yellow to produce super OLEDs: Crosslinking with azides enables improved performance

An increasing number of organic light-emitting diodes (OLEDs) is nowadays based on the use of polymers as the emissive material. For this material class in particular, solution-processing of the OLEDs has gained traction in both research and industry. However, in order to access multilayer material systems, orthogonal solvents must be used to prevent dissolution of previously prepared layers. The use of crosslinkers can facilitate this production method by reducing the number of orthogonal solvents needed since insoluble networks are generated. In this work, a novel bisazide crosslinker is employed to insolubilize Super Yellow, a polyphenylene-vinylene emitter. This allows the use of an additional poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine electron blocking layer (EBL) from the same solvent. Devices including the blocking layer show improved efficacies compared to reference devices without the additional EBL, while also maintaining the emission spectrum. Using the upscalable technique of doctor blading, OLEDs were fabricated which showed a particularly noticeable effect of the blocking layer with a nearly twofold increase in luminance and a 56% increase in current efficacy.     

Suppression of charge imbalance via Li+-Mn4+ co-incorporated Sr2YSbO6 red phosphors for warm w-LEDs

Mn⁴⁺-activated double perovskite phosphors with composition diversity have presented excellent luminescent performances. However, the charge imbalance between Mn⁴⁺ and matrix cations would increase non-radiative recombination and reduce the structural stability. Here, novel high-efficiency stable Li⁺/Mn⁴⁺ co-incorporated Sr₂YSbO₆ red phosphors are successfully synthesized via a solid-state reaction method for warm w-LEDs, where the Li⁺ ions have the effect of charge balance for Sr₂YSbO₆:Mn⁴⁺ and reduce the non-radiative energy transfer among Mn⁴⁺ ions. It is demonstrated that the substitution of Li⁺–Mn⁴⁺ pairs for Sb⁵⁺ can enhance the bonding with low-shifted diffraction peaks and high emission intensity, and prolong the decay lifetime, compared with those of Mn⁴⁺ single-doped ones. Impressively, the thermal stability is enhanced to 89.72% from 84.61% at the original value of 303 K. Finally, a w-LED device based on the optimal phosphor Sr₂YSbO₆:0.01Mn⁴⁺/0.01Li⁺ red component exhibits a correlated color temperature of 4487 K and color rendering index of 80.2. Therefore, the incorporated Li⁺ ions serve as both charge compensator and co-activator in Mn⁴⁺-activated double perovskite phosphors with the aim of high luminescent performance and thermal stability.     

Twisted Phenanthro[9,10-d]imidazole Derivatives as Non-doped Emitters for Efficient Electroluminescent Devices with Ultra-Deep Blue Emission and High Exciton Utilization Efficiency

Herein, two deep-blue emissive molecules ( SAF-PI and SAF-DPI ) are designed and synthesized using spiro[acridine-9,9’-fluorene] as a donor (D) substituted with 2-(3-methylphenyl)-1-phenyl-phenanthro[9,10-d]imidazole as an acceptor (A), forming twisted D−A and A−D−A structures, respectively. The photophysical studies and density functional theory (DFT) calculations reveal that both molecules exhibit hybridized local excited and charge transfer (HLCT) characteristics with deep blue emission color. They are effectively applied as non-doped emitters in OLEDs. Particularly, SAF-PI -based device achieves the high-definition television (HDTV) standard blue color emission peaked at 428 nm with CIE coordinate of (0.156, 0.053), a narrow full width at half maximum of 55 nm, a maximum external quantum efficiency (EQE_max) of 4.57% and an exciton utilization efficiency of 65%.