高速摄影同步触发光源系统设计及应用

为了解决高速摄影中由于时间短、同步难和照度低导致拍摄不到弹丸的问题,设计了一种同步触发光源系统。该系统以高亮度发光二极管(LED)阵列为光源,采用现场可编程门阵列进行控制。使用MATLAB软件对LED阵列进行仿真后可知,在距光源1m的中心位置上,该阵列光源的最大光照度可以达到9104Lux。实验中,实验弹出膛时启动相机拍摄,同时输出触发电平同步触发光源系统。结果表明,当实验弹的装药量为0.15g、相机帧频为5000frame/s时,经估算出膛速率大约为100m/s,并且同步触发光源有效地提高了照度和补充光照的同步程度。此研究对提高弹丸测试技术是有帮助的。     

不同发光染料的顶发射有机电致发光器件的研制

通过设计合理的微腔结构,制备了基于绿光染料C545t、黄光染料Rubrene、红光染料DCJTB的3种顶发射有机电致发光器件。研究了不同发光染料对顶发射器件的光谱的影响。研究表明,微腔结构对光谱具有窄化作用。绿光、黄光器件的发光峰波长并未随视角增大而明显变化,体现出良好的光谱角度性,而红光器件却出现了明显的光谱蓝移现象。绿光器件的最大功率效率为8.7 lm/W,当电流密度为45 m A/cm2时,亮度能达到7 205 cd/m2;黄光器件的电流效率最大值为11.5 cd/A,当电流密度为48 m A/cm2时,亮度可达到3 770 cd/m2;红光器件的电流效率最大能达到3.54 cd/A,当电流密度为50 m A/cm2时,可获得1 358 cd/m2的亮度。采用合适的发光材料以及合适的器件结构,不仅可以提高顶发射器件的色纯度及发光效率,还可以改善器件发光光谱的角度依赖性。     

功率型GaN基LED静电保护方法研究

介绍了几种常用的GaN基大功率白光发光二极管(LED)静电保护的方法,分析了GaN基大功率白光LED静电损伤的机理,并在此基础上,提出了改善GaN基大功率白光LED的抗静电损伤的途径与方法.     

GaN基蓝光发光二极管峰值波长偏移的研究

通过对蓝光和红光发光二极管在直流和脉冲电流两种情况下进行变电流测试,对其峰值波长的偏移情况进行了深入的对比分析和研究,指出主要是热效应和极化效应两个因素造成蓝光LED的峰值波长发生偏移,并计算出热效应单独引起峰值波长偏移的温度系数为0.080 7nm/K,In0.2Ga0.8N/GaN发光二极管量子阱中的极化强度为3.765 0 MV/cm;分析还认为电流注入下多量子阱中栽流子分布不均匀也是影响器件峰值波长的一个因素,并计算得到去除极化影响后量子阱中的场强,验证了在电流注入下多量子阱中载流子分布不均匀的结论.     

Enhancement of electroluminescence intensity in poly(3-alkylthiophene) with different alkyl side-chain length by doping of fluorescent dye

Electroluminescent diodes utilizing poly(3-alkylthiophene) (PAT) containing fluorescent dyes have been fabricated and their unique enhancement of emission characteristics have been studied. Remarkable enhancement of the electroluminescence efficiency has been observed for diodes with PAT doped with oxadiazole derivative (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole; PBD) and perylene derivative (N,N′ - Bis(2,5 - di - tert - butylphenyl) - 3,4,9,10 - perylenedi- carboximide; BPPC). The mechanism of emission enhancement by doping of PBD into PAT has been discussed with different alkyl side-chain lengths. © 1997 John Wiley & Sons, Ltd.     

Measuring internal electric fields in organic light-emitting diodes using electroabsorption spectroscopy

A widely applicable electroabsorption technique to measure internal electric fields in organic light-emitting diodes is presented. The technique exploits the change in the a.c. electroabsorption response in the presence of a d.c. electric field. The electroabsorption signal is modulated at the fundamental frequency of the a.c. test signal, in addition to the usual modulation at the second harmonic frequency, when a d.c. bias is present. In metal/organic film/metal devices employing different metal contacts there is a built-in electric field in the organic film caused by the difference in work function between the two contacts. The electroabsorption response at the fundamental frequency of the applied a.c. bias is measured as a function of an external d.c. bias. The electroabsorption signal is nulled when the applied d.c. bias cancels the built-in electric field established by the different metals. We apply this technique to measure changes in metal–polymer Schottky barrier heights as a function of the contact metal. In metal/multiple organic films/metal structures the electroabsorption signals from the constituent organic films are identified spectroscopically and measured at both the fundamental and second harmonic frequency of the a.c. test signal. The amplitudes of the electroabsorption responses are then used to determine the a.c. and d.c. electric fields present in the organic layers. We apply this technique to determine the d.c. electric field distribution within a multi-layer organic light-emitting diode. These results highlight the general applicability of electroabsorption methods to probe internal electric fields in organic light-emitting diodes. © 1997 John Wiley & Sons, Ltd.     

Synthesis and Characteristics of Organic Red‐Emissive Materials Based on Phenanthro[9,10‐d]imidazole

Red emission is one of the three primary colors that are essential for the realization of full‐color displays and solid‐state lightings. A high solid‐state efficiency is a crucial factor for the applications in organic light‐emitting diodes (OLEDs). In this work, two new donor‐acceptor‐donor type phenanthro[9,10‐d]imidazole (PIM)‐based derivatives, (2Z,2′Z)‐2,2′‐(1,4‐phenylene)bis(3‐(4‐(1‐phenyl‐1H‐phenanthro[9,10‐d]imidazol‐2‐yl)phenyl)acrylonitrile) ( PIDSB ) and 2,3‐bis(4′‐(1‐phenyl‐1H‐phenanthro[9,10‐d]imidazol‐2‐yl)‐[1,1′‐biphenyl]‐4‐yl)fumaronitrile ( PIDPh ), are designed and synthesized. Both of them possess high thermal stabilities. PIDPh shows typical characteristics of aggregation‐induced emission enhancement, while PIDSB displays an aggregation‐caused quenching effect. They both exhibit significant red‐shifted emissions compared with PIM owing to intramolecular charge transfer. In the film state, the emission peaks of PIDSB and PIDPh are located at 538 nm and 605 nm with high photoluminescent quantum yields of 63.82 % and 41.26 %, respectively. The non‐doped OLED using PIDPh as the active layer shows the maximum external quantum efficiency of 2.06 % with a very low efficiency roll‐off, and exhibits the electroluminescent peak at 640 nm with a Commission Internationale de l′Éclairage coordinate of (0.617,0.396), meeting well the criteria of red OLEDs.     

紫外臭氧处理增强溶液法MoO3薄膜的空穴注入能力

空穴注入层对有机发光二极管的性能有重要的影响,尤其是当器件中的空穴传输材料的最高占据分子轨道能级较深的时候。近年来有许多关于新型的溶液法空穴注入材料的研究。在本文中,我们对溶液法MoO₃薄膜使用了三种不同的处理方法来研究其对空穴注入性能的影响,即：在空气中150 ℃退火;在空气中150 ℃退火再紫外臭氧处理(UVO) 15 min;只进行UVO处理15 min。结果发现当MoO₃薄膜在空气中150 ℃退火后,器件的电流最小,空穴注入能力最差。而当MoO₃薄膜经过UVO处理后,器件的电流显著增大,工作电压大幅下降,器件性能接近于蒸镀的MoO₃薄膜的器件。更惊喜的是,这种改善在MoO₃薄膜仅作UVO处理后也可获得。经定量计算发现MoO₃薄膜经过UVO处理后的空穴注入效率能提高到约0.1。XPS分析表明通过UVO处理后,MoO₃薄膜中Mo⁵⁺成分减少并且薄膜表面的富氧吸附物被有效地消除,使得其化学计量基本与蒸镀的MoO₃薄膜相同。基于这种经UVO处理的溶液法MoO₃作为空穴注入层,器件的最大电流效率可达到48.3 cd∙A⁻¹。     

导电聚合物薄膜的喷墨打印制备及其光电器件

聚(3,4-乙撑二氧基噻吩):聚(苯乙烯磺酸)(PEDOT:PSS)由于兼备优良的导电性和透光率,被广泛用于透明功能性薄膜的制备,可作为空穴传输层或直接用作电极,运用到有机光伏器件(OPV)、有机场效应晶体管(OFET)、有机发光二极管(OLED)等薄膜器件的结构中,部分实现了氧化铟锡(ITO)薄膜的替代。常见的溶液成膜工艺是旋涂法,这种工艺操作较为简便,但原料利用率低,并且难以大面积均匀制备及图案化制膜, 不利于规模化生产和推广。近年来,喷墨打印制膜技术得到人们越来越多的关注。由于喷墨打印制膜技术可在多种基底上快速、高效地制备均匀大面积薄膜,并可轻易地实现各种精细图案化的制作,可溶液加工,更与卷对卷加工技术兼容,因此能够很好地节约原料,降低能耗和制作成本。目前已被广泛应用于有机电子学各个领域,特别是在制备柔性器件方面,展现出独特优势。本文对基于导电聚合物PEDOT:PSS的喷墨打印工艺进行了系统的阐述,对其制膜、图案化及其电子器件应用等相关研究作了较为全面的总结,并展望了其应用前景,对于更为全面、深刻地理解和推动喷墨打印制膜技术在有机电子学领域的应用具有重要的指导和借鉴意义。