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181.
A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been de-signed and studied. With the AlxGa1-xN/InyGa1-yN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained. 相似文献
182.
We report our study on highly flexible organic light-emitting diodes based on ZnS/Ag/WO3 (ZAW) multilayer transparent electrodes in which high conductivity and ductility of Ag layers allow for efficient sheet conduction and flexibility while ZnS and WO3 layers provide a means for enhancement in optical transmission and/or carrier-injection. Devices with ZAW anodes fabricated on planarized plastic substrates not only exhibit a performance and operational stability comparable to or better than those of ITO-based devices but also show a mechanical flexibility that is far superior to that of ITO-based devices. Experimental results show that a consistent performance can be obtained in ZAW-based devices upon repeated bending down to a radius of curvature of 5 mm, below which the flexibility of the devices is limited ultimately by the delamination occurring at cathode/organic interfaces rather than by the ZAW electrodes themselves. 相似文献
183.
184.
W. Renz 《Molecular Crystals and Liquid Crystals》2013,570(1):549-558
Competing nematic and smectic A phases of comb-like polymers are described by combining Maier-Saupe and McMillan type theories with the worm concept of semi-flexible polymers. There are as few material parameters as possible: main chain flexibility and phenomenological coupling constants. New qualitative predictions, the existence of critical points and re-entrant nematic phases, as well as quantitative predictions for comparison with experiments are provided. A new mechanism for thermotropic nematic biaxiality which is specific of side-chain polymeric liquid crystals is found. 相似文献
185.
为了能够有效地提高电子的注入和传输能力,改善有机电致发光器件的性能,本文利用CsN3作为n型掺杂剂,对有机电子传输材料Bphen进行n型电学掺杂,制备了结构为ITO/MoO3(2 nm)/NPB(50 nm)/Alq3(30 nm)/Bphen(15 nm)/Bphen:CsN3(15 nm,x%,x=10,15,20)/Al(100 nm)的器件。实验结果表明,CsN3是一种有效的n型掺杂剂,以掺杂层Bphen:CsN3 作为电子传输层,可以有效地降低电子的注入势垒,改善器件的电子注入和传输能力,从而降低器件的开启电压,同时提高了器件的亮度和发光效率。在掺杂浓度为10%时器件的性能最优,开启电压仅为2.3 V,在7.2 V的驱动电压下,达到最大亮度29 060 cd/m2,是非掺杂器件的2.5倍以上。当驱动电压为6.6 V时,达到最大电流效率3.27 cd/A。而当掺杂浓度进一步提高时,由于Cs扩散严重,发光区形成淬灭中心,造成器件的效率下降。 相似文献
186.
Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers
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The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells. 相似文献
187.
Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer
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The efficiency enhancement of an InGaN light-emitting diode (LED) with an A1GaN/InGaN superlattice (SL) electron-blocking layer (EBL) is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region. 相似文献
188.
189.
热处理对白色有机电致发光器件发光性能的影响 总被引:2,自引:2,他引:0
为获得优质的有机电致发光器件.它的发射光谱是一个关键的因素。传统的方法是采用红、绿、蓝色多层叠合产生白光,但难以控制各基色的峰值强度。制备了利用混合型聚合物作为白色发光层的单层结构有机电致发光器件((OLED),其制备过程比多层结构器件简单得多。一种热处理方法(180℃,1h)用来控制此类白光OLED中各主要电致发光光谱峰值强度间的比例。经过热处理后,这种白光器件的电致发光光谱很接近于Nichia公司的无机白色发光二极管产品的电致发光光谱。由此可推测器件的色坐标接近于白色等能点,而且其阈值电压比热处理前降低了1V。 相似文献
190.