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101.
102.
将N,N'-bis-(1-naphthy1)-N,N'-dipheny-1,1'bipheny1 4,4'-diamine(NPB)与bathocuproine(BCP)2种材料以交叠沉积方式组成一种周期性结构作为空穴注入层,制备了结构为ITO/[NPB/BCP]n/AlQ/LiF/Al的有机电致发光器件(OLED).通过改变空穴注入层阱状结构的重复周期数n,可改变载流子复合区域,进而获得近白光和绿光发射.由于该结构能获得更好的载流子注入平衡,具有交叠结构空穴注入层的近白光器件在15 V时亮度达到3 433.8 cd/m2,在电流密度为60.9 mA/cm2时最大发光效率为2.26 cd/A.当周期数n大于3时得到绿光发射,与单空穴注入层ITO/NPB/AlQ/LiF/Al器件相比,交叠空穴注入层可将器件的最大亮度由2 512.8 cd/m2提高到866 1.0 cd/m2,最大亮度效率在20 mA/cm2时达到4.94 cd/A. 相似文献
103.
基于副载波复用的多输入单输出正交频分复用LED可见光通信系统 总被引:1,自引:0,他引:1
提出了一种基于副载波复用的新型的多输入单输出(MISO)正交频分复用可见光通信(OFDM-VLC)系统构架,并且实验验证了2×1和3×1的MISO OFDM-VLC系统传输。分别测量了2×1和3×1的实验系统的误差矢量幅度(EVM)随输入电压变化的曲线图,找出了两个系统各自的最佳偏置范围。在将输入电压设置在最佳偏置范围之内的情况下,改变传输距离,对2×1系统,给出了系统EVM性能变化的曲线图;对3×1系统,给出了系统EVM和误码率(BER)性能变化的曲线图。在没有任何均衡的情况下,两个系统的传输距离都可以长达140cm。 相似文献
104.
105.
106.
S. ChandramohanBeo Deul Ryu P. UthirakumarJi Hye Kang Hyun Kyu KimHyung Gu Kim Chang-Hee Hong 《Solid-state electronics》2011,57(1):90-92
We report on the spectral tunability of white light by localized surface plasmon (LSP) effect in a colour converting hybrid device made of CdSe/ZnS quantum dots (QDs) integrated on InGaN/GaN blue light-emitting diodes (LEDs). Silver (Ag) nanoparticles (NPs) are mixed with QDs for generating LSP effect. When the plasmon absorption of Ag NPs is synchronized to the QW emission at 448 nm, the NPs selectively absorb the blue light and subsequently enhance the QD emission. Using this energy transfer scheme, the (x, y) chromaticity coordinates of the hybrid white LED was tuned from (0.32, 0.17) to (0.43, 0.26), and thereby generated warm white light emission with correlated colour temperature (CCT) around 1800 K. Moreover, a 47% enhancement in the external quantum efficiency (EQE) was realized. 相似文献
107.
The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well (MQW) blue light- emitting diodes (LEDs) grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior. 相似文献
108.
Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer
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The optical and physical properties of an InGaN light-emitting diode (LED) with a specific design of a staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements. 相似文献
109.
研究了新型的芴-咔唑共聚物(PFC)与聚乙烯咔唑(PVK)掺杂体系的光致发光和电致发光特性.制备了结构分别为indium-tin-oxide(ITO)/PVK:PFC/bathocuproine(BCP)/tris-(8-hydroxylquinoline)-aluminum (Alq3) /Mg:Ag,ITO/PFC/BCP/Alq3/Mg∶Ag和ITO/PVK/BCP/Alq3/Mg∶Ag的三种有机电致发光器件.对器件的光电特性进行了测试.结果表明,掺杂体系中的PVK有效地抑制了固态膜中PFC激基缔合物的形成.掺杂器件在不同的外加电场作用下发生发光层位置的移动,通过调节外加电场,可以获得从绿光到蓝光的可见光发射.当外加电压大于7V时,掺杂器件的蓝色发光亮度达到1650cd/m2,推测其中可能存在从PVK到PFC的能量传递过程. 相似文献
110.
Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes 总被引:1,自引:0,他引:1
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<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized. 相似文献