Light‐induced degradation of PECVD aluminium oxide passivated silicon solar cells

Light‐induced degradation (LID) has been identified to be a critical issue for solar cells processed on boron‐doped silicon substrates. Typically, Czochralski‐grown silicon (Cz‐Si) has been reported to suffer from stronger LID than block‐cast multicrystalline silicon (mc‐Si) due to higher oxygen concentrations. This work investigates LID under conditions practically relevant under module operation on different cell types. It is shown that aluminium oxide (AlOx) passivated mc‐Si solar cells degrade more than a reference aluminium back surface field mc‐Si cell and, remarkably, an AlOx passivated Cz‐Si solar cell. The defect which is activated by illumination is shown to be doubtful a sole bulk effect while the AlOx passivation might play a certain role. This work may contribute to a re‐evaluation of the suitability of boron‐doped Cz‐ and mc‐Si for solar cells with very high efficiencies. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon

This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 10¹⁷ photons/cm²/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 10¹⁹ photons/cm²/s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

镜面偏心测量光学系统设计及其杂光分析

为了解决现有镜面偏心测量设备存在的问题,本文研究了一种采用切换镜头和调焦相结合的方法来设计的镜面偏心测量光学系统,使用这个光学系统,既能使被测镜面的曲率半径扩展到-∞~+∞范围,又能保证测量精度。通过Lighttools软件对这个光学系统进行光线追迹,分析其杂光分布,结果表明:准直镜头内部多次反射产生的杂光强度很低,可以忽略。而当被测镜头中存在相邻球心像距的镜面时,产生的杂光强度比较大,在后续的图像处理过程中,必须增强目标图像的对比度。利用研制的镜面偏心测量设备进行测量实验,结果进一步验证了杂光分析的正确性。     

空间光调制器曲面拼接实现全息三维显示视角拓展

本文对多空间光调制器不同拼接方式拓展全息三维再现像视角的方法进行了分析,基于多片空间光调制器拼接拓展视角的思想,利用平面反射镜、分光镜和两片透射式空间光调制器设计了曲面拼接系统,进行了全息三维再现像的视角拓展实验研究。用该系统对四棱锥物体的层析菲涅尔衍射全息图进行再现,结果表明,总视角由基于单片空间光调制器的1.7°增大到3.2°,即拓展到约1.9倍,分光镜能够消除两片空间光调制器间的间隙,实现无缝拼接。该方法同样适用于更多空间光调制器的曲面拼接中,可以有效地拓展全息再现像的视场角大小。     

纳米磁流体动态散斑干涉场的奇异场分布

通过对由纳米磁流体运动引起的双扫描激光散斑干涉光场及其变化做拉盖尔-高斯滤波下的傅里叶变换,获得动态散斑干涉图对应的光学涡旋分布及变化特征。分析认为,光学涡旋分布及变化对应着由纳米磁微粒及其团族的运动所引起的动态散斑变化。当纳米磁微粒聚集到分散的过程中,动态激光散斑光场的奇异场分布发生相应变化,说明了磁流体运动过程对应涡旋密度有先大后小,再由小变大的两个变化;并且光学涡旋密度高,对应较小颗粒的散斑场,磁流体处于稳态的状况;光学涡旋密度低,对应较大颗粒的散斑场,对应着磁流体激烈的运动。研究结果体现了奇异场分布变化和纳米磁流体动后趋稳的过程存在对应关系。     

Grain boundary,triple junction and quadruple point mobility controlled normal grain growth

Reduction in stored free energy provides the thermodynamic driving force for grain and bubble growth in polycrystals and foams. Evolution of polycrystalline networks exhibit the additional complication that grain growth may be controlled by several kinetic mechanisms through which the decrease in network energy occurs. Polyhedral boundaries, triple junctions (TJs), and quadruple points (QPs) are the geometrically distinct elements of three dimensional networks that follow Plateau’s rules, provided that grain growth is limited by diffusion through, and motion of, cell boundaries. Shvindlerman and co-workers have long recognized the kinetic influences on polycrystalline grain growth of network TJs and QPs. Moreover, the emergence of interesting polycrystalline nanomaterials underscored that TJs can indeed influence grain growth kinetics. Currently there exist few detailed studies concerned either with network distributions of grain size, number of faces per grain, or with ‘grain trajectories’, when grain growth is limited by the motion of its TJs or QPs. By contrast there exist abundant studies of classical grain growth limited by boundary mobility. This study is focused on a topological/geometrical representation of polycrystals to obtain statistical predictions of the grain size and face number distributions, as well as growth ‘trajectories’ during steady-state grain growth. Three limits to grain growth are considered, with grain growth kinetics controlled by boundary, TJ, and QP mobilities.     

Recent advances in wavefront shaping techniques for biomedical applications

Due to the highly inhomogeneous distributions of refractive indexes, light propagation in complex media such as biological tissue experiences multiple light scattering events. The suppression and control of multiple light scattering events are investigated because they offer the possibility of optical focusing and imaging through biological tissues, and they may open new avenues for diagnosis and treatment of several human diseases. In order to provide insight into how new optical techniques can address the issues of multiple light scattering in biomedical applications, the recent progress in optical wavefront-shaping techniques is summarized.     

Measurements of the spatially resolved electron temperature and plasma potential in ferrite-core side type Ar/He inductively-coupled plasmas

Spatial distributions of the effective electron temperature (T_eff) and plasma potential were studied from the measurement of an electron energy probability function in a side type ferrite-core inductively coupled plasma with an argon–helium mixture. As the helium gas was diluted at the fixed total gas pressure of 5 mTorr in an argon discharge, the distribution of the plasma density and plasma potential changed from a concave to a flat profile, and finally became a convex profile, while all spatial profiles of T_eff were hollow shapes with helium dilution in the argon discharge. This evolution of the plasma potential with helium gas could be explained by the increased energy relaxation length (λ_ε), indicating the transition of electron kinetics from local to non-local kinetics.