基于块对角化的格基规约GMD矢量预编码

研究了对多用户多输入多输出下行链路进行块对角化后,使用格基规约算法的几何均值分解矢量预编码的实现方法。根据块对角化思想将多用户多天线信道分解为等价并行子信道,基于等价子信道给出了单个用户的几何均值分解矢量预编码的传输方案,通过使用格基规约算法分别结合连续干扰消除和垂直分层空时编码两种方法,求解矢量预编码中的扰动矢量。仿真表明,提出的方法误码率性能优于块对角化矢量预编码算法2 dB以上,而且能在不降低系统性能的前提下降低计算复杂度。     

Na和Ti掺杂对Bi_2(Zn_(1/3)Nb_(2/3))_2O_7陶瓷性能的影响

采用传统固相反应法制备了Na-Ti掺杂Bi2(Zn1/3Nb2/3)2O7陶瓷。研究了Na+替代Bi3+,Ti4+替代Nb5+对Bi2(Zn1/3Nb2/3)2O7陶瓷烧结特性、显微结构和介电性能的影响。结果表明,掺入Na+和Ti4+后,Bi2(Zn1/3Nb2/3)2O7陶瓷的烧结温度从1000℃降到了860℃左右;在–30℃～+130℃的温度范围内,Na-Ti掺杂Bi2(Zn1/3Nb2/3)2O7陶瓷表现出明显的、激活能约为0.3eV的介电弛豫现象。这主要是由缺陷偶极子和晶格畸变在陶瓷中的出现引起的。     

Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii–vi compounds

Theoretical design of pseudo-ternary and quaternary alloys by superlattice structures consisting of (Zn,Cd)(S,Se) binary II–VI compounds has been studied. For pseudo-ternary ZnCdS and ZnCdSe alloys, the superlattices with two layers in a cycle, i.e., ZnS/CdS and ZnSe/CdSe are considered, and for pseudo-quaternary ZnCdSSe alloy, the two superlattice structures with more than two layers in a cycle are considered. In order to design and evaluate these superlattices, the expression for the equilibrium in-plane lattice constant of these superlattices has been derived by minimizing the total elastic strain energy in the cycle. The combinations of layer thicknesses in a cycle and the effective bandgap of these superlattices have been calculated while the elastic strain effect was included. The usefulness of these superlattice structures has been evaluated.     

一种基于概念格的本体合并方法

提出了一种基于概念格的,并利用叙词表的方法进行本体合并.为了进一步获得提取本体概念的相关指导,提高本体概念抽取的自动化程度,提出最小外延集概念,从而更方便有效地进行本体合并.     

自适应格型滤波器新算法及其在语音线性预测合成中的应用

本文从自适应格型滤波器导出自适应线谱对(LSP)滤波,提出了使用最小均方(LMS)型自适应算法逐级更新计算线谱对系数的方法。实验表明,该算法与其它算法比较,具有更高的收敛率和较低的失调。用该算法计算得到的LSP系数进行语音线性预测合成,获得比使用PARCOR系数更好的结果。     

光子晶体太赫兹双波长滤波器的设计

这里提出一种新型的光子晶体太赫兹（THz）双波长滤波器,应用平面波法（PWM）分析其带隙结构,应用时域有限差分法（FDTD）研究THz波在该滤波器中的传输特性。结果表明,采用复式正方晶格结构的太赫兹滤波器,可以通过一个点缺陷实现两个波长的选择,通过选择合适半径的点缺陷,并在点缺陷处填充非线性介质砷化镓（GaAs）和增大某些介质柱的半径,可使该滤波器实现高耦合效率的单信道双频率选频滤波功能。     

A Hierarchy of Integrable Lattice Soliton Equations and New Integrable Symplectic Map

Starting from a discrete spectral problem, a hierarchy of integrable lattice soliton equations is derived. It is shown that the hierarchy is completely integrable in the Liouville sense and possesses discrete bi-Hamiltonian structure. A new integrable symplectic map and finite-dimensional integrable systems are given by nonlinearization method. The binary Bargmann constraint gives rise to a Bäcklund transformation for the resulting integrable lattice equations. At last, conservation laws of the hierarchy are presented.     

A Solvable Decorated Ising Lattice Model

A decorated lattice is suggested and the Ising model on it with three kinds of interactions K₁, K₂, and K₃ is studied. Using an equivalent transformation, the square decorated Ising lattice is transformed into a regular square Ising lattice with nearest-neighbor, next-nearest-neighbor, and four-spin interactions, and the critical fixed point is found at K₁=0.5769, K₂=-0.0671, and K₃=0.3428, which determines the critical temperature of the system. It is also found that this system and the regular square Ising lattice, and the eight-vertex model belong to the same universality class.     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

单晶硅晶格间距的测量技术进展及应用

单晶硅晶格间距是许多重要物理常数测量的基础。本文介绍了硅晶格间距测量技术的发展历程,包括X射线干涉仪直接测量和晶格比较仪间接测量两种方法,以及影响测量结果不确定度的关键因素。得益于晶格间距测量的进展,在纳米尺度,硅晶格间距被国际计量局(BIPM)批准成为新的米定义复现形式。最后介绍了硅晶格在计量学中的应用,以及基于硅晶格实现纳米几何量测量的溯源体系的研究趋势。