自聚焦光纤对半导体激光束的准直研究

介绍了一种新颖的利用自聚焦光纤对半导体激光束的准直技术。该方法结构简单、调整方便。实验研究表明其可使大发散角的半导体激光束压缩到0.01º的数量级,适合作半导体激光器的准直元件而运用于精密测试领域。     

激光诱导H_2S催化裂解制备H_2的研究

在室温常压静态条件下研究了以Ｖ２Ｏ５／ＴｉＯ２为催化剂，紫外脉冲激光诱导Ｈ２Ｓ催化分解为Ｈ２和Ｓ的反应及其机理。考察了产氢量与激光不同照射条件之间的关系。     

人造导星技术及导星用激光系统

论述了自适应光学系统对人造导星的需要;简单介绍了两类激光导星;重点描述了销激光导星的产生机理及可用于销激光导星的一些激光系统.     

激光超塑性成型技术研究

本文探讨了激光超塑成型技术中所涉及的合金板材制备、光能耦合及成型工艺，给出了标样拉伸实验和实际工件成型的结果，并对金相组织进行了分析．     

CATV系统用的外调制光发射机

文章介绍了ＣＡＴＶ系统用的外调制光发射机，并对包括固体激光器和外调制器在内的外调制光发射机原理、失真、性能、应用等方面做较详细的阐述。     

注入种子CuBr激光器中的光谱控制

报道了采用注入种子方法．对ＣｕＢｒ激光器进行激光模式控制的实验结果。实现了单纵模ＣｕＢｒ激光脉冲的注入放大，获得了功率为１００ｍＷ水平的窄线宽铜激光辐射．在理论上分析了短脉冲高增益激光器中注入种子过程，讨论了在注入种子ＣｕＢｒ激光器中进行光谱控制的实验结果．     

激光对改变胰岛致免疫性的影响

新生猪胰岛样细胞团经准分子激光照射预处理后，其免疫原性明显降低，表明经激光预处理，有可能延长移植物存活时间。     

Structural study of degraded ZnMgSSe blue light emitters

Using electroluminescence (EL) topography and transmission electron microscopy (TEM), we investigated the nonluminescent regions which form while current is being injected into ZnMgSSe/ZnSSe/ZnCdSe-based blue light emitters. Small dark spots were observed just after turn-on and spread out forming rough nonluminescent triangles in the <100> directions in the EL image of the active region. TEM studies showed that the small dark spots are pre-existing stacking faults originating at the substrate/epitaxial layer interface. The nonluminescent triangles were found to be a dense region of dislocation dipoles and dislocation loops. Each dipole was aligned along two <110> directions in the {111} planes. The Burgers vectors were of the type a/2<011> inclined at 45° to the (001) junction plane.     

激光对抗技术发展动态

激光对抗主要包括激光侦察告警、激光无源干扰和有源干扰，以及激光防护几方面。本文概述了激光对抗技术的发展。     

Structure induced by irradiation of femtosecond laser pulse in dyed polymeric materials

We investigated the structures induced by an irradiation of a near‐infrared (NIR) femtosecond laser pulse in dye‐doped polymeric materials {poly(methyl methacrylate) (PMMA), thermoplastic epoxy resin (Epoxy), and a block copolymer of methyl methacrylate and ethyl acrylate‐butyl acrylate [p(MMA/EA‐BA) block copolymer]}. Dyes used were classified into two types—type 1 with absorption at 400 nm and type 2 with no absorption at 400 nm. The 400‐nm wavelength corresponds to the two‐photon absorption region by the irradiated NIR laser pulse at 800 nm. Type 1 dye‐doped PMMA and p(MMA/EA‐BA) block copolymer showed a peculiar dye additive effect for the structures induced by the line irradiation of a NIR femtosecond laser pulse. On the contrary, dye‐doped Epoxy did not exhibit a dye additive effect. The different results among PMMA, p(MMA/EA‐BA) block copolymer, and Epoxy matrix polymers are supposed to be related to the difference of electron‐acceptor properties. The mechanism of this type 1 dye‐additive‐effect phenomenon for PMMA and p(MMA/EA‐BA) block copolymer is discussed on the basis of two‐photon absorption of type 1 dye at 400 nm by the irradiation of a femtosecond laser pulse with 800 nm wavelength and the dissipation of the absorbed energy to the polymer matrix among various transition processes. Dyes with a low‐fluorescence quantum yield favored the formation of thicker grating structures. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2800–2806, 2002