Characterization of adhesion property between fused silica and thermoplastic polymer film in thermal nanoimprint lithography using a novel pull-off test

A novel pull-off test that mimics the actual thermal NIL process was conducted to investigate the adhesion properties between a flat fused silica and thermoplastic polymer film used in thermal NIL process. The pull-off force was measured under various NIL conditions—such as use of various polymer materials, imprint pressures, and separation velocities—and the surfaces of the mold and polymer film were observed after the test. The anti-sticking layer (ASL) derived from (1H,1H,2H,2H-perfluorooctyl)trichlorosilane (F₁₃-OTS) was coated on the fused silica and its effects on the adhesion characteristics was also examined. In cases of the mold without ASL, the pull-off force varied significantly according to the process conditions and damage on the polymer film was observed in most of the tests. In cases of the mold coated with the ASL, on the other hands, the pull-off force was maintained at a lower level in the range of the imprint pressure from 2 to 10 MPa or separation velocity from 1 to 25 μm/s, and there was no damage to the polymer film due to adhesion.     

InGaAs and Ge MOSFETs with high κ dielectrics

InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al₂O₃/Ga₂O₃(Gd₂O₃) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (D_it’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage V_th with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm²/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al₂O₃/GGO gate dielectrics and ALD-Al₂O₃. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length.     

Surface acoustic wave characteristics of ZnO films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a magnetron sputtering system. Atomic force microscopy (AFM) and X-ray diffraction (XRD) showed that the ZnO grown on 3C-SiC/Si had a smooth surface, a dominant c-axis orientation and a lower residual stress in ZnO thin film compared to that grown directly onto Si substrate. In order to evaluate the SAW characteristics of ZnO films on a 3C-SiC buffer layer, the two-port SAW resonators, based on inter-digital transducer (IDT)/ZnO/3C-SiC/Si and IDT/ZnO/Si structures, were fabricated and measured within a temperature range of 25-135 °C. The resulting 3C-SiC buffer layer improved the insertion loss by approximately 7.3 dB within the SAW resonator and enhanced the temperature stability with TCF = −22 ppm/°C up to 135 °C in comparison to that of TCF = −45 ppm/°C within a temperature range of 25-115 °C of the ZnO/Si structure.     

Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel layer

Submicron-meter poly-Si tunneling-effect thin-film transistor (TFT) devices with a thinned channel layer have been investigated. With reducing the gate length to be shorter than 1 μm, the poly-Si TFT device with conventional MOSFET structure is considerably degraded. The tunneling field-effect transistor (TFET) structure can be employed to alleviate the short channel effect, thus largely suppressing the off-state leakage. However, for a poly-Si channel layer of 100 nm thickness, the TFET structure causes a small on-state current, which may not provide well sufficient driving current. By reducing the channel layer thickness to be 20 nm, the on-state current for the TFET structure can be largely increased, due to the enhanced bending of energy band for a thinned channel layer. As a result, for the TFET poly-Si TFTs at a gate bias of 5 V and a drain bias of 3 V, a 20-nm channel layer leads to an on-state current of about 1 order larger than that by a 100-nm channel layer, while still keeping an off-state leakage smaller than 0.1 pA/μm. Accordingly, the submicron-meter TFET poly-Si TFT devices with a thinned channel layer would show good feasibility for implementing high packing density of poly-Si TFT devices.     

ARP协议动态交互仿真系统的设计

ARP协议是TCP/IP协议簇中的主要协议。网络协议仿真系统为教学提供了一个良好的实验平台,然而目前所用的协议仿真实验系统都是离散的、静态的,即单独模拟一个协议,且协议中的数据表示是静态的,不能随着输入数据的变化而动态变化。为了帮助学生更好的理解ARP协议,有必要开发出一个既能使协议之间相互协作,又能动态实现数据的变化,使实验效果逼真实际的仿真实验系统。文中主要描述了ARP协议动态交互仿真实验系统的设计和实现,满足了系统的设计需要,提高了协议的学习效率。     

Direct numerical simulation of a turbulent boundary layer up to Reθ = 2500

Direct numerical simulations (DNSs) of a turbulent boundary layer (TBL) with Re_θ = 570-2560 were performed to investigate the spatial development of its turbulence characteristics. The inflow simulation was conducted in the range Re_θ = 570-1600 by using Lund’s method. To resolve the numerical periodicity induced by the recycling method, we adopted a sufficiently long streamwise domain of x/θ_in,i = 1000 (=125δ_0,i), where θ_in,i is the inlet momentum thickness and δ_0,i is the inlet boundary layer thickness in the inflow simulation. Furthermore, the main simulation with a length greater than 50δ₀ was carried out independently by using the inflow data, where δ₀ is the inlet boundary layer thickness of the main simulation. The integral quantities and the first-, second- and higher-order turbulence statistics were compared with those of previous data, and good agreement was found. The present study provides a useful database for the turbulence statistics of TBLs. In addition, instantaneous field and two-point correlation of the streamwise velocity fluctuations displayed the existence of the very large-scale motions (VLSMs) with the characteristic widths of 0.1-0.2δ and that the flow structure for a length of approximately ∼6δ fully occupies the streamwise domain statistically.     

Mixed mode axisymmetric annular cracks in a finite layer: Off angle crack initiation

The solutions of axisymmetric Volterra type climb and glide edge dislocations are obtained in a layer by means of the Hankel transforms. Utilizing the same procedure, Green’s function solution is obtained for a layer under self-equilibration normal ring traction. The distributed dislocation technique is used to construct integral equations for a system of co-axial annular cracks where the layer is under axisymmetric normal loads. These equations are solved numerically to obtain dislocation density on the cracks surfaces. The results are employed to determine stress intensity factors for annular and penny-shaped cracks and the interaction between two co-axial penny-shaped cracks is studied. Moreover, the stress intensity factors of the interacting cracks are determined such that they can be further used in conjunction with strain energy density (SED) failure criterion to obtain the possible direction of crack initiation that may not be apparent under mixed mode conditions.     

Inverse estimation for unknown fouling geometry on inner wall of forced-convection pipe

A conjugate gradient method (CGM) based on the inverse algorithm is used to estimate the unknown fouling-layer profile on the inner wall of a pipe system using simulated temperature measurements taken within the pipe wall. It is assumed that no prior information is available about the functional form of the unknown profile. Therefore, the procedure is classified as the function estimation in inverse calculation. The temperature data obtained from the direct problem are used to simulate the temperature measurements. The accuracy of the inverse analysis is examined using the simulated exact and inexact temperature measurements. The results show that the excellent estimation of the fouling-layer profile can be obtained for the test case considered in this study. The technique presented in this study can be used in a warning system to call for pipe maintenance when the thickness of fouling exceeds a predefined criterion.