红外焦平面用面阵微透镜的氩离子束刻蚀制作

讨论了制作大面阵矩底拱面状微透镜阵列的工艺条件，给出了氩离子束刻蚀制作红外焦平面用面阵微透镜的离子束刻蚀速率的经验关系式，通过实验获得了光电材料几种常用的氩离子束刻蚀速率与氩离子束能量之间的关系曲线，用扫描电子显微镜测量了所制微透镜阵列的微结构形貌特征。     

Patterning issues for the fabrication of sub-micron memory capacitors' electrodes

This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 μm) dynamic random access memory devices. Due to reactive ion etching lag, the Pt etch rate decreased drastically below the CD of 0.20 μm and thus K-th storage node electrode with the CD of 0.15 μm could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmountly-the above difficulties. The Ru electrode cannot for the stack-type structure is introduced and alternative multischemes based on the introduction of the concave-type selfstructure upto using semi-Pt or Ru as an electrode material are outlined respectively.     

The Role of oxygen diffusion in photoinduced changes of the electronic and optical properties in amorphous indium oxide

A stable increase by as much as 10⁸ in the conductivity of amorphous indium oxide to σ≥ 10³Ω^-1 cm₋₁ can be achieved by ultraviolet photoreduction. This treatment also increases the absorption coefficient, α(hυ), by up to a factor of 10₃ for hυ <1.5 eV due to free carrier absorption and causes a 0.1 eV shift of the absorption edge to the blue. These changes are controlled by the Fermi level, EF, which is presumably determined by doping due to oxygen vacancies. A diffusion constant D >3 x 10⁻¹² cm²/s for oxygen at 300K is determined from a constant flow experiment. Oxygen diffusion is verified by secondary ion mass spectrometry with ¹⁸O. The functions α(hυ) and σ(T) are simulated as E_F is varied using a simple density of states model appropriate for amorphous semiconductors. These simulations qualitatively agree with the experimental data if transitions from the conduction band tail to the conduction band are assumed to be forbidden.     

用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算

利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响.     

End-Hall与APS离子源辅助沉积制备的薄膜特性

利用离子束辅助沉积(IAD)技术制备了单层HfO2薄膜,离子源分别为End-Hall与APS离子源。采用Lambda900分光光度计、可变角光谱椭圆偏振仪(V-VASE)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)、ZYGO干涉仪和激光量热计测试了薄膜的透射光谱、光学常数、晶体结构、表面形貌和吸收(1064nm)。实验结果表明,薄膜特性与辅助离子源及起始膜料有着密切的关系。End-Hall离子源辅助沉积制备的薄膜出现轻微的折射率不均匀性。两种离子源辅助沉积制备的薄膜折射率均较高,吸收损耗小,薄膜均为单斜晶相。不同离子源辅助沉积条件下,利用金属Hf为起始膜料制备的薄膜表面平整度较好,其均方根粗糙度和总积分散射均相对较小。与End-Hall离子源相比,APS离子源辅助沉积制备的薄膜吸收相对较小。     

Multifunctional Electrode Design Consisting of 3D Porous Separator Modulated with Patterned Anode for High‐Performance Dual‐Ion Batteries

Searching for low‐cost and high‐capacity electrode materials such as metal anodes is of important significance for the development of new generation rechargeable batteries. However, metal anodes always suffer from severe volume expansion/contraction during a repeated electrochemical alloying/dealloying process. In this study, a novel concept about modifying metal‐anodes‐based battery construction with a multifunctional electrode (ME) design is provided. The ME consists of a 3D porous separator that is modulated with a patterned aluminum anode, which simultaneously works as a current collector, anode material, and separator in a dual‐ion battery (DIB). The 3D porous separator not only enables the ME to possess significantly improved electrolyte uptake and retention capabilities, but also acts as a protecting layer to restrict the surface pulverization of the Al anode. The ME‐DIB displays remarkably enhanced cell performances, including excellent cycling stability with 92.4% capacity retention after 1000 cycles at a current density of 2 C, and superior rate performance with 80.7% capacity retention at 10 C.     

锂离子电池用聚合物电解质的最新进展I.干态聚合物电解质

聚合物锂离子电池的发展对聚合物电解质提出了更高的要求,促使人们开发性能优良的干态聚合物电解质。综述了近年来干态聚合物电解质的研究进展,包括:(1)以改性聚氧化乙烯-锂盐复合体系为代表的耦合体系;(2)导电机理完全不同的解耦合体系;(3)阴离子移动受限的单离子体系。其中,解耦合体系与单离子体系的研究得到了特别的关注。     

High‐Performance Cathode Based on Self‐Templated 3D Porous Microcrystalline Carbon with Improved Anion Adsorption and Intercalation

Dual‐ion batteries (DIBs) have attracted much attention due to their advantages of low cost and especially environmental friendliness. However, the capacities of most DIBs are still unsatisfied (≈100 mAh g^?1) ascribed to the limited capacity of anions intercalation for conventional graphite cathode. In this study, 3D porous microcrystalline carbon (3D‐PMC) was designed and synthesized via a self‐templated growth approach, and when used as cathode for a DIB, it allows both intercalation and adsorption of anions. The microcrystalline carbon is beneficial to obtain capacity originated from anions intercalation, and the 3D porous structure with a certain surface area contributes to anions adsorption capacity. With the synergistic effect, this 3D‐PMC is utilized as cathode and tin as anode for a sodium‐based DIB, which has a high capacity of 168.0 mAh g^?1 at 0.3 A g^?1, among the best values of reported DIBs so far. This cell also exhibits long‐term cycling stability with a capacity retention of ≈70% after 2000 cycles at a high current rate of 1 A g^?1. It is believed that this work will provide a strategy to develop high‐performance cathode materials for DIBs.     

电子束蒸发沉积TiN薄膜的电学特性研究

采用TCP(Transverse coupled plasma)等离子体辅助电子枪蒸镀技术,在玻璃衬底上制备了TiN薄膜。用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)研究了不同工艺条件对薄膜晶体结构和表面形貌的影响;用四探针法测量薄膜的电阻率变化。结果表明,所制备的TiN薄膜在(111)晶面有择优取向。与金属薄膜类似,TiN薄膜的平均表面粗糙度与电阻率之间存在近似线性关系,并且电阻率随残余应力增大而增大。