液态金属离子源发射尖的制备工艺与技术

发射尖是液态金属离子源(LMIS)的关键部件之一，其性能的优劣直接影响到整个离子源的工作稳定性。通过对系统软件和硬件的设计，开发了一套发射尖自动腐蚀装置，该装置可以对发射尖腐蚀过程中的速度和深度以及腐蚀电压进行控制，实现发射尖腐蚀工艺的重复性、可靠性，从而为液态金属离子源以及聚焦离子束系统的研制、开发提供了一个有效的辅助工具。     

任意取向多个介质旋转椭球的散射场

本文提出了一种用于计算任意取向多个介质椭球电磁散射的混合方法.利用扩展边界条件(EBC)导出具有旋转轴对称单个椭球以球面波矢量函数为基底的T矩阵,结合球矢量波函数旋转定理和递推T矩阵方法,给出多个任意取向介质椭球的散射场.数值例子验证了该混合方法的计算精度和有效性.     

镍铬合金在酸性CuCl2溶液中反应机理

对铜在酸性CuCl_2溶液中蚀刻反应机理论述,利用氧化-还原电动势原理,详细论述了Ni80Cr20合金在酸性CuCl_2溶液中化学蚀刻反应机理,以及影响蚀刻速度的因素,并对溶液中金属离子的存在形式作了验证。     

Atomic layer chemical vapour deposition of copper

Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We have deposited strongly (1 1 1)-textured thin films of copper by atomic layer deposition (ALD) using [2,2,6,6-tetramethyl-3,5-heptadionato] Cu(II), Cu(thd)₂, as the precursor. The dependence of the microstructure of the films on ALD conditions, such as the number of ALD cycles and the deposition temperature was studied by X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy. Analysis of (1 1 1)-textured films shows the presence of twin planes in the copper grains throughout the films. SEM shows a labyrinthine structure of highly connected, large grains developing as film thickness increases. This leads to low resistivity and suggests high resistance to electromigration.     

线光栅扫描实现衍射图形的矢量化直写

在双光束激光直写系统中,衍射光变图像的光刻是逐像素点进行的.本文提出在该系统中采用狭缝获得光栅线来进行衍射图形的直写,利用一种改进的矢量文件格式,使平台沿着垂直光栅线的方向运动,获得连续的多光点同时直写,直写后的衍射光栅线是连续的,系统的运行效率是逐点光刻的几十倍.编写了与DXF文件的接口直写控制程序,给出了实验结果.     

海杂波中基于混沌预测的目标检测方法改进

基于记忆库非线性预测的NP-CFAR方法是目前混沌海杂波背景中目标检测的一种典型而先进的方法.考虑到海杂波功率与特征的时变不稳定性,本文提出运用旋转超盒分类取代这一方法中的NP-CFAR进行目标检测,并探讨了运用盒维数特征提取进行预处理以节省运算开销的问题.仿真实验验证了本文所提改进方法的有效性.     

掺铒碲基光纤放大器最新研究进展

掺铒碲基光纤放大器(EDTFA)由于能同时在C L波段(1530-1610nm)或L波段(1580-1620nm)对光信号进行有效的放大，目前已成为通信领域内竞相开发的一种新型宽带光纤放大器，为此简单介绍了该放大器的研究历程，综述了其最新研究进展和应用情况。     

Activation of peroxyl and molecular oxygen using bis -benzimidazole diamide copper (II) compounds

New tetradentatebis-benzimidazole ligands have been synthesized and utilized to prepare copper (II) complexes. Some of these copper (II) complexes have been characterized structurally. The copper (II) in these complexes is found to possess varying geometries. A distorted octahedral geometry is found with a highly unsymmetrical bidentate nitrate group. An unusual polymeric one-dimensional structure is observed where copper (II) is in a distorted square pyramidal geometry with a monodentate nitrate ion, having long Cu-O bond, while a distorted triagonal bipyramidal geometry is found with two carbonyl O atoms and a Cl atom in the equatorial plane, and two benzimidazole imine N atoms occupy the axial position. These compounds are found to activate the cumylperoxyl group, and this has been utilized in the facile oxidation of aromatic alcohols to aldehydes, where they act as catalysts with large turnovers. The yields of the respective products vary from 32 to 65%. The role of molecular oxygen has been studied and an attempt has been made to identify the “active copper species”. Activation of molecular oxygen has also been observed and has been used for oxidative dealkylation of a hindered phenol, producing di-butyl quinones with yields of 20–25% and 10–12 fold catalytic turnover. Dihydroxybenzenes and substituted catechols are also readily oxidized to the corresponding quinones, in oxygen-saturated solvents. Yields of 84% have been observed with 34-fold catalyst turnover, with di-t-butylcatechol. The activity of these copper (II) —bis-benzmidazolediamide compounds is reminiscent of the functioning of copper centres in galactose oxidase, tyrosinase and catechol oxidase.     

电子电路中抗EMI设计

电磁干扰(EMI)可分为传导干扰和辐射干扰,消除干扰的方法可以采用硬件方法和软件方法,硬件方法主要有屏蔽、接地、隔离和滤波等,而软件方法主要是滤波。笔者对各种方法进行总结,并指出各种方法所存在的问题以及适用场合,并对一些常用方法提出改进措施。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.