InGaZnO薄膜晶体管泄漏电流模型

研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor,InGaZnO TFT)的泄漏电流模型.基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制,分别得到了高电场和低电场条件下的载流子产生-复合率.在此基础上推导得到了InGaZnO TFT的分段式泄漏电流-电压数学模型,并利用平滑函数得到了关断区和亚阈区连续统一的泄漏电流模型.所提出的泄漏电流模型的计算值和TCAD模拟值与实验结果较为吻合.利用所提出的InGaZnO TFT泄漏电流模型和TCAD模拟,讨论了InGaZnO TFT不同的沟道宽度、沟道长度和栅介质层厚度对泄漏电流值的影响.研究结果对InGaZnO TFT集成传感电路的设计具有一定参考价值.     

Design of a 6-DOF force device for virtual assembly (FDVA-6) of mechanical parts

Among different interaction modalities, force feedback is one of the key technologies to increase the interactivity and immersion of a virtual assembly process. This paper presents a 6-DOF force device with its forward kinematic analysis, workspace simulation, and gravity compensation. To evaluate the device, a prototype system is developed and a case study is conducted to assemble a mechanical product. The users have given positive feedback on the gravity compensation implemented and the general performance of the device.     

乙醇催化氧化实验的改进

通过分析高中化学教材中实验的不足及相关文献报道,运用注射器、洗耳球、试管、酒精灯等简单仪器,设计了一套乙醇在铜催化下与氧气反应生成乙醛的实验装置,取得了较好的实验效果。     

用于激光稳频系统的控温F-P标准具特性研究

法布里-珀罗标准具由于其结构简单、性能稳定,不仅可以实现不同频率光束的分离、高精度的长度测量、分析激光的纵模结构等,还可用于激光器的稳频系统。本文对F-P标准具的透射率、半高宽度、自由光谱区以及透射率与温度的关系等特性进行了研究,并将其应用在激光器的稳频装置中。     

氩气驱动液态锂回路的总体设计及初步运行结果

为了研究等离子体与自由液态锂表面相互作用的物理过程,建立了用氩气驱动的液态锂回路装置。介绍了建立的液态锂回路装置的组成部分、技术参数及运行原理。此回路主要由主回路、等离子体与液态锂相互作用试验段和单阴极高密度等离子体发生装置三部分组成。目前,此回路已取得一些初步的模拟结果和实验结果。     

A possible interplay between electron beams and magnetic fluxes in the Aharonov–Bohm effect

Most studies on the magnetic Aharonov–Bohm (A–B) effect focus on the action exerted by the magnetic flux on the electron beam, but neglect the back-action exerted by the electron beam on the magnetic flux. This paper focuses on the latter, which is the electromotive force ΔU across the solenoid induced by the time-dependent magnetic field of the electron beam. Based on the backaction analysis, we observe that the magnetic A–B effect arises owing to the interaction energy between the magnetic field of the electron beam and the magnetic field of the solenoid. We also demonstrate that the interpretation attributing the magnetic A–B effect to the vector potential violates the uncertainty principle.     

自主体发光的蓝绿色磷光Ir(Ⅲ)配合物的合成及光电特性

合成了一类自主体蓝绿色磷光铱(Ⅲ)配合物(CzPhBI)₂Ir(tfmptz), (CzPhBI)₂Ir(tfmpptz)和(CzPhBI)₂Ir(fpptz)[其中CzPhBI, tfmptz, tfmpptz和fpptz分别为9-[6-(2-苯基-1-苯并咪唑基)己基]-9-咔唑、 2-(5-三氟甲基-1,2,4-三唑基)吡啶、 2-(5-[4-(三氟甲基)苯基]-1,2,3-三唑)吡啶和2-[5-(4-氟苯基)-1,2,3-三唑]吡啶]. 通过核磁共振氢谱和氟谱及元素分析确定其分子结构, 并对其光物理性能进行了研究. 利用该类配合物作为单发光层制备了器件结构为氧化铟锡(ITO)│N,N'-二苯基-N,N'-二(1-萘基)-1,1'-联苯-4,4'-二胺(NPB)(30 nm)│4,4'-N,N'-二咔唑基联苯(CBP)(15 nm)│Ir配合物(30 nm)│1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TBPI)(30 nm)│LiF(1 nm)│Al(100 nm)的电致发光器件, 其最大亮度为6913 cd/m², 最大发光效率达13.9 cd/A.     

Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.     

Two-dimensional analytical subthreshold model of graded channel DG FD SOI n-MOSFET with gate misalignment effect

A two-dimensional (2-D) analytical subthreshold model is developed for a graded channel double gate (DG) fully depleted SOI n-MOSFET incorporating a gate misalignment effect. The conformal mapping transformation (CMT) approach has been used to provide an accurate prediction of the surface potential, electric field, threshold voltage and subthreshold behavior of the device, considering the gate misalignment effect to be on both source and drain side. The model is applied to both uniformly doped (UD) and graded channel (GC) DG MOSFETs. The results of an analytical model agree well with 3-D simulated data obtained by ATLAS-3D device simulation software.     

两种主体材料中Ir(ppy)_3和Rubrene的能量传递特性

OLED技术被认为是最有可能取代液晶显示的全新技术,而OLED中的有机电致磷光器件是近年来的研究热点.有机电致磷光器件的发光层往往采用主客体掺杂体系,主客体分子内的能量传递是磷光发光体分子被激发的主要途径,因此选择吸收能量和传递能量好的主体材料是改进有机电致磷光器件性能的主要途径之一.文章分别以PVK和CBP作为主体材料,以磷光材料Ir(PPY)3和荧光材料Rubrene作为掺杂剂,制备了不同配比的器件,研究了主体材料和掺杂剂之间的能量传递特性.结果发现,这两种主体材料分别通过Ir(ppy)3向Rubrene传递能量是主要的能量传递机制,而且CBP作为主体时能量传递比PVK更充分.另外掺入Ir(ppy)3后的器件比不掺Ir(ppy)3的器件在相同电压下的光功率明显增强.当我们增加Ir(PPY)3的浓度时,相同电压下的光功率下降,浓度猝灭效应增强.