Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.     

一种高速低功耗的欠压锁定电路

设计了一种高速低功耗的欠压锁定电路。在迟滞比较器的输出级采用轨对轨输入共源放大器电路,检测VUVLO由高电平跳变为低电平的过程,自适应地控制输出级的尾电流源大小,以减小输出建立时间,使得后级电路能够快速响应电源变化。基于华虹0.35 μm BCD工艺进行设计与仿真,结果表明,在输出级的尾电流大小为1.3 μA时,相比传统电路,该电路能减少30%的输出建立时间。这不仅降低了功耗,还提高了电路响应速度。     

Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement

A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.     

高压馈线二次回路仿真装置的设计及演示

变电站高压馈线二次回路是电力系统及其自动化专业学生所应掌握的重点内容,但目前各高校使用的实验装置结构复杂,不利于学生理解掌握。笔者研制了一套用于电气专业实习教学的高压馈线二次回路仿真综合实验装置。该装置原理简单、操作方便,易于理解,可以实现断路器的分合操作、电流保护动作断路器跳闸及重合闸装置动作等多项实验。经过在相关实...     

电荷耦合器件的γ辐照剂量率效应研究

对电荷耦合器件进行了不同剂量率的γ辐照实验,通过多种参数的测试探讨了剂量率与电荷耦合器件性能退化的关系,并对损伤的物理机理进行分析。辐照和退火结果表明:暗信号和暗信号非均匀性是γ辐照的敏感参数,电荷转移效率和饱和输出电压随剂量累积有缓慢下降的趋势;暗场像素灰度值整体抬升,像元之间的差异显著增加;电荷耦合器件的暗信号增量与剂量率呈负相关性,器件存在潜在的低剂量率损伤增强效应。分析认为,剂量率效应是由界面态和氧化物陷阱电荷竞争导致的。通过电子-空穴对复合模型、质子输运模型和界面态形成对机理进行了解释。     

基于声表面波纸基微流器件研究

为了降低工艺要求和制作成本,提出了压电基片上纸基微流器件制作方法。采用焊锡丝构建微通道图案,通过聚二甲基硅氧烷(PDMS)固化、剥离焊锡丝、填入棉线、棉线吸收未固化PDMS等工艺过程,将图案转印于纸基片,并贴合于128°YX-LiNbO_3压电基片上。实验结果表明,电信号功率为27.3 dBm时,在研制器件上实现淀粉显色反应,验证其微流分析功能。     

近太赫兹频段功率源技术发展与应用

太赫兹辐射源是太赫兹技术应用的基础。简要介绍了太赫兹辐射源的类型和发展现状,重点论述了近太赫兹频 段功率器件,主要包括折叠波导行波管、扩展互作用速调管、回旋管、返波器件等。分析了不同应用场景对太赫兹功率 器件的需求,论证相关器件在雷达、预警探测、航天测控等国防装备领域系统的应用。     

光锥与CCD耦合器件调制传递函数的测试方法

采用直接对倾斜刀口成像的方法测量光锥与CCD耦合器件的调制传递函数.这种方法对静止刀口成像,利用刀口与光锥纤维列间的一定倾斜角度,在垂直于刀口的不同行之间形成不同的值,代替了传统刀口扫描中的扫描装置,并无需保证刀口与阵列的平行,相应地减小了测量误差. 在数据处理中采用了二次平均法,即对同一幅图像得出的不同位置值进行平均及多次测量结果平均,在一定程度上消除了由于离散性产生的空间非平移不变性的影响.     

Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM

Single event multiple-cell upsets (MCU) increase sharply with the semiconductor devices scaling. The impacts of several test factors on heavy ion single event MCU in 65 nm SRAM are studied based on the buildup of MCU test data acquiring and processing technique, including the heavy ion LET, the tilt angle, the device orientation, the test pattern and the supply voltage; the MCU physical bitmaps are extracted correspondingly. The dependencies of parameters such as the MCU percentage, MCU mean and topological pattern on these factors are summarized and analyzed. This work is meaningful for developing a more reasonable single event test method and assessing the effectiveness of anti-MCU strategies on nanometer-scale devices.