From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n ?/ p Ion Implantation Technology

This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μm) focal plane arrays using n-on-p planar ion-implanted technology. To explore and analyze the feasibility of such VLWIR detectors, a set of four Cd _x Hg_1−x Te LPE layers with an 18 μ cutoff at 50 K has been processed at Defir (LETI/LIR–Sofradir joint laboratory), using both our “standard” n-on-p process and our improved low dark current process. Several 320 × 256 arrays, 30-μm pitch, have been hybridized on standard Sofradir readout circuits and tested. Small dimension test arrays characterization is also presented. Measured photonic currents with a 20°C black body suggest an internal quantum efficiency above 50%. Typical I(V) curves and thermal evolution of the saturation current are discussed, showing that standard photodiodes remain diffusion limited at low biases for temperatures down to 30 K. Moreover, the dark current gain brought by the improved process is clearly visible for temperatures higher than 40 K. Noise measurements are also discussed showing that a very large majority of detectors appeared background limited under usual illumination and biases. In our opinion, such results demonstrate the feasibility of high-performance complex focal plane arrays in the VLWIR range at medium term.     

On the counting function of the lattice profile of periodic sequences

The lattice profile analyzes the intrinsic structure of pseudorandom number sequences with applications in Monte Carlo methods and cryptology. In this paper, using the discrete Fourier transform for periodic sequences and the relation between the lattice profile and the linear complexity, we give general formulas for the expected value, variance, and counting function of the lattice profile of periodic sequences with fixed period. Moreover, we determine in a more explicit form the expected value, variance, and counting function of the lattice profile of periodic sequences for special values of the period.     

基于CCD图像的火灾空间定位方法

大空间中火源的空间位置的定位,一直是火灾自动探测与自动扑救中的难点。研究了一种利用单一CCD摄像头进行火灾自动空间定位的方法。根据计算机视觉原理,利用固定在自动消防水炮末端的CCD摄像头随水炮旋转扫描时的角度、位移变化,将CCD摄像头在不同位置所拍摄的图像中火源图像坐标和火源的空间坐标建立联系,从而实现了火源空间位置的自动定位。     

小波提升算法及其在图像处理中的应用

小波提升算法是一种新的双正交小波构造方法，通过预测算子，确定高频信息，并初步确定低频信息，然后通过更新算子，对初步确定的低频信息进行修正，从而确定低频信息。它在空域对信号进行变换，完成了对信号频域的分析。在图像处理中，基于离散小波变换的提升算法比传统的卷积算法运算简单，实时性好，易于实现，因而被新一代图像压缩标准JPEG2000所采用。文中简要介绍了小波提升算法的原理，分析了其特点，并介绍了JPEG2000标准中采用的W5／3、D9／7两种小波的提升格式和实现算法。     

320×240 Pixels CMOS Digital Image Sensor with Wide Dynamic Range

A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range.     

一种基于TV模型的自适应图像修复方法

图像修复是数字图像处理的重要内容，可用于被损坏的图像和视频修复、视频文字去除以及视频错误隐藏等。基于TV模型的修复方法有较好的恢复效果，但对参数的选取比较敏感，且运算量较大。本文提出了一种基于TV模型的自适应图像修复方法，与原方法相比可以有效提高该算法的稳健性，并能显著的减少运算时间。     

数码相机CMOS图像传感器的特性参数与选择

介绍了数码相机的核心器件———CMOS图像传感器的特性参数和在数码相机设计过程中CMOS图像传感器的选择。选择CMOS图像传感器,不仅需要考虑包括传感器的尺寸、像素总数和有效像素数、最小照度、动态范围、灵敏度、分辨力、光电响应不均匀性以及光谱响应等在内的特性参数,而且还要考虑电源管理和功耗、模数转换位数、开发的简便性以及成本等因素。     

像管亮度增益与背景测试仪

论述像管亮度增益与背景测试仪的原理，介绍仪器的组成以及测试数据的处理方法。     

胶子重组函数的性质

通过协变和非协变的方法研究了领头对数近似(LLA)下扭度为4的QCD演化方程中的胶子重组函数的性质.指出了GLRMQ方程中的胶子重组函数并不适用.讨论了避免红外发散的方法,这种方法可以用于高扭度下演化核和系数函数的推导.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.