Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Electrochemical growth and characterization of iron doped cadmium sulfide thin films

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.     

An ideal host-guest system to accomplish high-performance greenish yellow and hybrid white organic light-emitting diodes

Greenish yellow organic light-emitting diodes (GYOLEDs) have steadily attracted researcher's attention since they are important to our life. However, their performance significantly lags behind compared with the three primary colors based OLEDs. Herein, for the first time, an ideal host-guest system has been demonstrated to accomplish high-performance phosphorescent GYOLEDs, where the guest concentration is as low as 2%. The GYOLED exhibits a forward-viewing power efficiency of 57.0 lm/W at 1000 cd/m², which is the highest among GYOLEDs. Besides, extremely low efficiency roll-off and voltages are achieved. The origin of the high performance is unveiled and it is found that the combined mechanisms of host-guest energy transfer and direct exciton formation on the guest are effective to furnish the greenish yellow emission. Then, by dint of this ideal host-guest system, a simplified but high-performance hybrid white OLED (WOLED) has been developed. The WOLED can exhibit an ultrahigh color rendering index (CRI) of 92, a maximum total efficiency of 27.5 lm/W and a low turn-on voltage of 2.5 V (1 cd/m²), unlocking a novel avenue to simultaneously achieve simplified structure, ultrahigh CRI (>90), high efficiency and low voltage.     

相关条件下基于N-P准则的分布式检测理论研究

本文针对并行网络、二元局部判决的情况,研究了在相关条件下基于N-P准则的分布式检测融合算法,给出了在联合概率密度已知和未知两种情况下的最优融合规则的理论推导及相应的解决方案,并在实验仿真的基础上,得到了部分有益的结论。     

浅谈县级有线电视网络的改造

就嘉善有线电视网络在适应数字电视传输时存在的问题以及今后网络的整体改造进行探讨。     

用等厚干涉测定液体折射率

介绍一种采用等厚干涉原理测定液体折射率的简单可靠的方法。     

现场总线技术在城市污水处理与气象中的应用

文章主要讨论了LonWorks现场总线技术在城市污水处理厂和气象指数预报中的应用。采用IPC和PLC控制结构对现场的各种设备实现控制和数据的采集，通过现场总线网络传输数据到中心控制室或远程终端，实现污水处理的自动控制和气象信息的实时采集和处理。     

由光率体求导折射率及振动方向的新方法

从光率体出发，利用坐标轴旋转，导出了光在晶体中传播时折射率及振动方向的公式。     

中国证券市场股指波动的条件异方差特性分析

股指的波动具有持续性、集聚性 ,如何进行判别 ?本文用 Garch模型理论探讨沪深股指的这种条件异方差特征 ,进一步分析波动是否影响股指未来变化 ,以及股市对利好、利空的消息是否存在不对称的反映。同时 ,比较不同类型的股指的共性及差异 ,并对上述现象作了解释和说明。