High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz

Ultra-thin barrier (UTB) 4-nm-AlGaN/GaN normally-off high electron mobility transistors (HEMTs) having a high current gain cut-off frequency (f_T) are demonstrated by the stress-engineered compressive SiN trench technology. The compressive in-situ SiN guarantees the UTB-AlGaN/GaN heterostructure can operate a high electron density of 1.27×10¹³cm^-2, a high uniform sheet resistance of 312.8 Ω /□, but a negative threshold for the short-gate devices fabricated on it. With the lateral stress-engineering by full removing in-situ SiN in the 600-nm SiN trench, the short-gated (70 nm) devices obtain a threshold of 0.2 V, achieving the devices operating at enhancement-mode (E-mode). Meanwhile, the novel device also can operate a large current of 610 mA/mm and a high transconductance of 394 mS/mm for the E-mode devices. Most of all, a high f_T/f_max of 128 GHz/255 GHz is obtained, which is the highest value among the reported E-mode AlGaN/GaN HEMTs. Besides, being together with the 211 GHz/346 GHz of f_T/f_max for the D-mode HEMTs fabricated on the same materials, this design of E/D-mode with the realization of f_max over 200 GHz in this work is the first one that can be used in Q-band mixed-signal application with further optimization. And the minimized processing difference between the E- and D-mode designs the addition of the SiN trench, will promise an enormous competitive advantage in the fabricating costs.     

基于聚合诱导自组装制备二氧化硅/聚合物纳米复合材料

纳米二氧化硅(SiO2)颗粒以其高硬度、高比表面积、高稳定、价格合理等优势被广泛应用于复合材料的制备中,获得的SiO2/聚合物复合材料通常具有优良的机械性能、很好的热稳定性以及增强的光学和电性能.近年来,随着聚合诱导自组装(PISA)的提出与发展,研究者们基于PISA发展了多种制备不同形貌聚合物纳米粒子的简便方法,为制...     

Structural evolution of low-dimensional metal oxide semiconductors under external stress

Metal oxide semiconductors (MOSs) are attractive candidates as functional parts and connections in nanodevices. Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in structural instability and thus degrade the performance of MOS. Hence, the basic insight into the structural evolutions of low-dimensional MOS is a prerequisite for extensive applications, which unfortunately remains largely unexplored. Herein, we review the recent progress regarding the mechanical deformation mechanisms in MOSs, such as CuO and ZnO nanowires (NWs). We report the phase transformation of CuO NWs resulting from oxygen vacancy migration under compressive stress and the tensile strain-induced phase transition in ZnO NWs. Moreover, the influence of electron beam irradiation on interpreting the mechanical behaviors is discussed.     

基于变分模态分解和压缩感知的弱观测条件下雷达信号重构方法

针对弱观测条件下雷达信号存在数据残损的问题,该文提出一种基于变分模态分解和压缩感知(VMD-CS)的雷达信号重构方法。首先通过变分模态分解对采样数据进行降解去噪处理,其次在压缩感知框架下构造观测矩阵、稀疏表示字典矩阵,然后基于正交追踪匹配(OMP)算法重构出稀疏表示向量。在此基础上利用离散余弦稀疏矩阵重构信号,实现对残损雷达信号的数据重构。在连续丢失数据和随机丢失数据两种情况下,对实际采集的线性调频(LFM)雷达信号进行仿真实验。实验结果表明：在数据连续丢失率不高于30%或随机丢失率不高于60%的情况下,该文方法能有效重构雷达信号,在时域、频域和瞬时频率上能够准确逼近原始信号。     

乙二醇溶剂热合成的CeO2的可逆氧化还原性及CO2捕获性能

利用乙二醇的还原性,采用乙二醇溶剂热法制备了表面具有丰富氧空穴的CeO₂-GST纳米晶,对其进行了X射线衍射、透射电镜、X射线光电子能谱、原位H₂还原-O₂氧化循环和CO₂原位红外漫反射表征,并研究了其可逆氧化还原性及CO₂捕获性能. 结果表明,与CeO₂-nanorod和柠檬酸溶胶法合成的CeO₂-CA样品相比,CeO₂-GST纳米晶具有最好的可逆氧化还原性能和循环稳定性,同时在50 ℃下具有最好的CO₂吸附性能（149 μmol/g）. 利用原位红外漫反射光谱研究了CO₂在还原CeO₂表面的吸附情况,发现CO₂主要以双齿碳酸盐和桥连碳酸盐两种形式吸附在CeO₂表面,其中桥连碳酸盐物种不稳定,He吹扫可脱附. 此外,CO₂在CeO₂-nanorod上还会生成稳定的甲酸盐和单齿碳酸盐物种.     

O4对利用天顶散射光法测量大气组分含量的影响研究

通过实验证明是否考虑O₄的存在对利用天顶散射光测量大气组分含量的结果存在影响.介绍了天顶散射光的观测原理、实验仪器、测量方法、光谱处理以及浓度反演过程.用具体的实验数据说明考虑O₄在实验波段内的吸收能提高NO₂和O₃浓度反演结果的准确性.同时将观测得到的臭氧垂直柱密度与美国TOMS观测数据进行了对比. 关键词： 4')" href="#">O₄ 臭氧 天顶散射光 DOAS     

基于粒子滤波的微小卫星姿态确定算法

为了提高非线性卫星姿态控制系统的滤波性能,在建立了采用磁强计及太阳敏感器的卫星姿态模型的基础上尝试了新兴的粒子滤波(PF)算法对卫星系统进行姿态估计,进而对采用矢量观测的三轴稳定卫星的姿态确定问题进行了滤波算法的实时仿真,并将四元数转换成旋转矢量引入了粒子滤波算法,最后给出了卫星模型在不同粒子数目下的滤波性能比较,并在系统初始误差较大的情况下将粒子滤波算法与EKF滤波算法进行了滤波性能的对照。仿真结果表明,粒子滤波算法对粒子数目具有明显的依赖性,但是当粒子达到一定的数目时,粒子滤波的精度以及滤波稳定性都可以得到保证,尤其是在系统初始误差较大的情况下粒子滤波算法更显示了其优于EKF算法的滤波性能。     

两级式光伏并网发电控制系统仿真分析

阐述了两级式光伏并网发电控制系统的结构及其控制过程,建立了光伏阵列模型和光伏并网发电系统模型,利用光伏阵列模型模拟了光照条件变化时光伏并网系统的输出情况进行仿真分析。实验表明,此两级式光伏并网发电系统能迅速有效地跟踪到光伏阵列的最大功率点,而且能够控制并网电流的波形,使逆变器的输出电流与电网电压同频同相,保证电流输出波形为正弦波。     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

载机偏航运动对大视场红外扫描装置成像质量影响的仿真分析

某航空大视场红外扫描装置采用TDI-CCD 探测器、以整机摆扫工作方式扫描成像,由于扫描装置为滚动-俯仰结构的两轴稳定平台,对偏航扰动没有稳定作用,其成像质量易受载机偏航运动的影响.通过运动学分析方法建立扫描装置的视轴运动方程及视轴旋转约束条件,得出不影响成像质量的载机偏航运动范围.在载机实际飞行数据输入条件下进行仿真验证,当载机直线飞行时,其偏航运动不影响成像质量.飞行试验验证表明:摆扫扫描图像清晰,航空大视场扫描装置具有良好的载机偏航运动适应性.