Vapor phase equilibria in the Cd1−xZnxTe alloy system

Cd_1−xZn_xTe compounds of different compositions have been prepared at temperatures ranging from 400 to 1000°C by annealing elemental Te in sealed quartz ampoules, in an atmosphere comprising vapors of Cd and Zn whose partial pressures were varied by varying the composition of the binary Cd_1−yZn_y alloys which provided the Cd and Zn vapors in these annealing experiments. The chemical compositions of the resulting Cd_1−xZn_xTe compounds have been analyzed using electron probe microanalytical techniques. Results indicate that presence of a 0.5%Zn along with Cd in a closed or semi-closed system may prove to be beneficial in preventing decomposition and/or formation of a metal/non metal phase during annealing of Cd_0.96Zn_0.04 Te substrates. Using the thermodynamic data in the literature for the binary Cd_1−yZn_y alloys and with the assumption that the activities of the Cd and Zn components are weakly dependent on temperature, the partial pressures of Cd and Zn in equilibrium with the Cd_1−xZn_xTe compounds at various temperatures have been evaluated.     

高剂量Ar离子辐照Si缺陷产生及其退火行为EPR研究

112MeVAr离子在50K以下的低温辐照Si到8×10¹⁴/cm²剂量,室温下采用电子顺磁共振技术分析了由辐照引起的缺陷产生及其退火行为,结果表明:Ar离子辐照在Si中引起了中性四空位(Si-P3心)､带正电荷的〈100〉劈裂的双间隙子(Si-P6心)以及连续的非晶层3种缺陷的形成. 在200℃的退火温度,Si-P3心和Si-P6心消失,这时带负电荷的五空位(Si-P1心)开始生长,Si-P1心可以保持到550℃左右的退火温度. 在350℃时,可以明显地观测到另一个含有更多空位的顺磁缺陷心(Si-A11心).连续非晶层的再结晶需要600℃以上的温度,并且在整个退火过程中,非晶顺磁共振线的线型和线宽保持不变. 定性地讨论了结果.     

Pt/n-GaN肖特基接触的退火行为

在金属有机物气相外延 (MOVPE)方法生长的非故意掺杂的n GaN上用Pt制成了肖特基接触 ,并在 2 5 0～6 5 0℃范围内对该接触进行退火 .通过实验发现 ,Pt与非故意掺杂n GaN外延薄膜可以形成较好的肖特基接触 ,而适当的退火温度可以有效地改善Pt/n GaN肖特基接触的性质 .在该实验条件下 ,40 0℃温度下退火后的Pt/n GaN肖特基接触 ,势垒高度最大 ,理想因子最小 .在 6 0 0℃以上温度退火后 ,该接触特性受到破坏 ,SEM显示在该温度下 ,Pt已经在GaN表面凝聚成球 ,表面形成孔洞.     

The investigation of carbon nitride films annealed at different temperatures

The effects of thermal annealing on the component and microstructure of carbon nitride films deposited by vacuum cathodic arc method are reported. The bonding structure of the films is investigated by Raman spectroscopy, FTIR, XPS and valence band XPS. Upon annealing, the N content of the film drops gradually from original 31.0 to 17.0 at.% at 600 °C. The results of Raman spectroscopy, FTIR and valence XPS demonstrate that the films below 500 °C mainly consist of aromatic cluster component and polymeric component, which is rather stable upon the increasing of anealing temperatures. With the further increasing of the annealing temperatures from 400 to 600 °C, the fraction of polymeric component decreases and the aromatic component develops greatly. Meanwhile the films tend to transform towards the fullerene-like microstructure, which can be seen from the large separation of the N 1s peaks (>2.0 eV). As a result the N sp³ C bonds increase due to the rising of cross-linking between the graphite plane.     

热敏电缆

热敏电缆是一种能够监测较大区域温场的特殊温度传感器，按测温原理可分为电阻型和热电偶型两类。国外产品的温度监测范围分段覆盖－２９～＋９００℃，国内产品的温度监测范围为１００～３５０℃。热敏电缆广泛应用于化工、机械、能源、食品、印刷、仓储等行业。     

Annealing behaviour of structure and morphology and its effects on the optical gain of Er3+/Yb3+ co-doped Al2O3 planar waveguide amplifier

Using transmission electron microscopy (TEM) and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped Al₂O₃ films in the temperature range from $600\,^{\circ}\mkern-1mu$C--900$\,^{\circ}\mkern-1mu$C. By comparison with TEM observation, the annealing behaviours of photoluminescence (PL) emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800$\,^{\circ}\mkern-1mu$C might result from the crystallization of amorphous Al₂O₃ films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al₂O₃ planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al₂O₃ planar waveguide amplifier.     

In-situ monitoring of a film preparation process for hydroxypropyl cellulose cast from isotropic aqueous solution using microdielectrometry

Solid cast films with polydomain textures were prepared on a glass substrate with transparent interdigitated electrodes from an isotropic aqueous solution of hydroxypropyl cellulose via its liquid crystalline phase under the sinusoidal electric field with small amplitude and frequency of 0.05 V µm^-1 and 10⁵ Hz, respectively. The process was monitored using microdielectrometry as well as polarised optical microscopy. The apparent dielectric constant ε_r' and loss factor ε_r' sensitively changed with time depending on the process conditions. On the other hand, the logarithmic relation between ε_r' and ε_r' showed a single curve, when they were normalised by an effective portion of the electrostatic energy density estimated using each solid-film thickness. The conversion to the solid film was estimated during the process based on the concentration dependences of ε_r' and ε_r'. Characteristic times were reported for the onset of the biphasic phase, fully developed cholesteric phase and termination of the process.     

A simulated annealing based solution approach for the two-layered location registration and paging areas partitioning problem in cellular mobile networks

This paper presents a mathematical model and simulated annealing based solution approach for finding optimal location updates and paging area configuration for mobile communication networks. We use a two-layered zone-based location registration and paging scheme in which the costs of location updates and paging signaling traffic are reduced by introducing a two-step paging process. The location updates and paging procedures in a two-layered scheme are first described, and an approximation of the measure required for calculating the paging-related signaling volume is provided based on assumptions of cell shapes and mobile stations’ movement patterns. A simulated annealing (SA)-based solution method is devised along with a greedy heuristic, and computational experiments are conducted to illustrate the superiority of the proposed SA-based method over other solution methods.     

Improved control of momentary rapid thermal annnealing for silicidation

Temperature control and wafer-to-wafer reproducibility during momentary annealing via rapid thermal annealing is critical for TiSi₂ Self-Aligned siLICIDE (SALICIDE) processing for deep submicron complementary metal oxide semiconductor. TiSi₂ must undergo a transformation from the high resistivity C49 phase to the low resistivity C54 phase for applications where it is used as a gate conductor. A process modification to achieve improved wafer-to-wafer and within wafer temperature reproducibility is demonstrated. It has the additional benefit to the TiSi₂ salicide process of enabling anneals of reduced duration, enhancing suicide transformation to the desired phase without leading to agglomeration.