Low temperature molten salt synthesis of YAG: Ce spherical powder and its thermally stable luminescent properties after post-annealing treatment

Spherical YAG: Ce particles were successfully synthesized at 350 °C by the molten-salt method. The effect of temperature and amount of salt on the crystallization and particle size of YAG: Ce were investigated thoroughly. The results demonstrated that the powders prepared at 350 °C in salt to reactant ratio 2:1 were pure YAG: Ce phase with 200–300 nm in particle size. The as-synthesized phosphors were later post annealed at 1200 °C in O₂, air and N₂, respectively. The results showed that the emission intensity of YAG: Ce sensitively depended on the post-treated atmosphere and the phosphor annealed in N₂ showed the highest emission intensities and a good thermal stability.     

溶剂去除速度对于溶剂退火薄膜相形貌的影响

以聚苯乙烯-聚4-乙烯基吡啶(PS-b-P4VP)嵌段共聚物作为研究对象,采用DMF作为退火溶剂,以原子力显微镜(AFM)和透射电子显微镜(TEM)为表征手段,研究了溶剂退火后期溶胀薄膜中溶剂的去除速度对于薄膜相形貌的影响,发现通过改变溶剂去除速度可以有效的调控薄膜中的形貌.当薄膜厚度为35 nm时,DMF的快速挥发会导致薄膜中形成以PS为分散相的反转柱状相结构,当降低溶剂的挥发速度时,薄膜中形成了以PS为分散相的环状形貌,当进一步减缓挥发速度时,薄膜中将形成台阶状的片层结构;然而当薄膜厚度为55 nm时,溶剂退火后期薄膜中形成的是以P4VP为分散相的正常柱状相结构,在相同溶剂去除速度条件下薄膜相形貌变化较小.     

GISAXS analysis of Ge nanoparticles embedded ZnO thin films: The effect of oxygen partial pressure and thermal process on the nanostructured aggregations

Ge nanoparticles embedded in ZnO thin films (synthesized on p-type Si substrates) were investigated to explore their potential usage possibilities as diodes for opto-electronic devices and photovoltaics, thin-film transistors, and solar cells. Nano scale structural details under the effect of different gas pressure of O₂ may include some hints to understand and develop structure-property correlations of the focused type materials. With this purpose, GISAXS (Grazing-incidence small-angle X–ray scattering) was used for 3D structural analysis of the films according to the thermal process (Rapid Thermal Annealing: RTA and Absence of Thermal Effect: AS-MADE) and O₂ partial pressure during the deposition of ZnO matrix.As a result of the study, it may be said that size and shape controlled growth processes are possible for these types of films. Especially, increase in pressure indicates orthogonal like prismatic morphology at 1 mTorr, cylindrical at 3 mTorr and more compact spherical formation at 5 mTorr. That way, morphology controlled nanoscale growth can be achieved by changing the oxygen partial pressure for the oxide matrices. On the other hand, size of the nano aggregations decreases with increased partial pressure for both of RTA processed and AS-MADE samples. Decreasing ratio in the size of AS-MADE sample is bigger than that of RTA samples.     

Introducing voids around the interlayer of AlN by high temperature annealing

Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×10⁹ cm^-2 to 5.10×10⁸ cm^-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.     

Compaction of nanosilicon pellets and sol-deposited films via high-vacuum annealing

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基于实际路网情境的配送车辆调度优化

在实际路网情境下结合车道数、车道宽度、路口信号灯设置等路网物理特性,构建了考虑综合交通阻抗的多车型车辆调度模型,提出了两阶段求解策略:第1阶段设计了改进A-star精确解算法用于计算客户时间距离矩阵;第2阶段针对实际路网的特征设计了混合模拟退火算法求解调度方案。以大连市某配送中心运营实例进行路网情境仿真试验,结果表明:改进A-star算法较改进Dijkstra算法具有更短的路径搜索时间;混合模拟退火算法求解结果较实际调度方案优化了13.1% 的综合成本;路网增流、区域拥堵和路段禁行三类路网情境均能对配送方案的车辆配置、路径选择、客户服务次序、作业时间和违约费用等5方面内容产生干扰,调度计划的制定需要详细考虑这些因素的变化。     

Thermal stability of devices with molybdenum oxide doped organic semiconductors

We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO₃)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′-diamine (NPB) layer is facilitated when the MoO₃-doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 kΩ to 3 kΩ after thermal annealing at 100 °C for 30 min. Temperature-dependent conductance/angular frequency–frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO₃, which is represented by the activation energy (E_a), is reduced after the annealing process.     

Thermal stability of ester linkage in the presence of 1,2,3‐Triazole moiety generated by click reaction

The copper(I)‐catalyzed alkyne‐azide cycloaddition (CuAAC), so‐called “click” reaction, is one of most useful synthetic strategies to connect two polymer chains. 1,2,3‐Triazole ring (TA) produced by the click reaction has good thermal and chemical stability. However, we observed that block copolymers synthesized by the click reaction showed thermal degradation to give homopolymers when they are thermally annealed at high temperature, which is required for obtaining equilibrium microdomain structure. To investigate the origin of thermal instability of block copolymers, we synthesized model polystyrenes (PSs) using systematically designed bi‐functional atom transfer radical polymerization (ATRP) initiators containing TA. PS including both ester and TA groups showed thermal decomposition at relatively low temperature (e.g., 140 °C). MALDI‐TOF analysis clearly demonstrated that the cleavage site is the ester group adjacent to TA. We also found that the bromine group located at the polymer chain end plays an important role in pyrolysis of ester groups at low temperature. The pyrolysis occurs by syn‐elimination of the ester group. This result implies that the phase behavior of block copolymer synthesized by click reaction should be carefully investigated when high temperature thermal annealing is required. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 427–436     

Flux and fluence dependence of disorder produced during implantation of 11B in silicon

The flux and fluence dependence of disorder produced in silicon during the implantation of ¹¹B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV ¹¹B ions using current densities in the range from 0.06μA/cm² to 15μA/cm², and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on ¹¹B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures.