超声退火形成片状PCBM堆积聚合物太阳电池研究

采用超声退火方法制备了P3HT/PCBM聚合物有机太阳电池。测试结果表明:超声退火40℃制备的电池能量转换效率最好,最优器件的能量转换效率达到了5.16%,这主要归因为超声退火40℃的电池薄膜内形成了片状PCBM堆积,有效地提高了器件的电子迁移率和太阳能吸收效率。     

Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures

The codiffusion of implanted boron and arsenic during rapid thermal annealing in a polysilicon/monocrystalline silicon system used for high speed bipolar integrated circuit technology has been investigated. Such a process allows a uniformly high concentration in the emitter regions. It induces a very shallow emitter-base junction depth for an n-p-n transistor. On the contrary, in p-n-p configuration, when the arsenic dose is lower than the boron dose, boron deeply penetrates the single-crystal silicon, causing problems for fabricating shallow junctions. The rapid thermal annealing-induced redistribution of arsenic and boron implanted at various implant doses in a 380 nm low-pressure chemical vapor deposition (LPCVD) polysilicon layer has been studied by secondary ion mass spectroscopy measurements. A strong lowering of the minority dopant diffusion in the polysilicon film is observed due to the high concentration of the other dopant. This effect is mainly related to grain boundary trap saturation while the electric field issued from dopant activation in the fastly recrystallized amorphous layer due to arsenic implantation in the upper region of the LPCVD film has a lesser effect. Transmission electron microscopy measurements show that recrystallization extends deeper than the amorphous layer, which is responsible for the increase of grain size. Sheet resistance measurements have been performed as an approach to the electrical behavior for these structures.     

氧化热处理对VO2薄膜红外光学相变特性的影响

采用直流磁控溅射法在硅基底上制备VO2薄膜,并对薄膜氧化热处理。分别对热处理前后薄膜进行X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)透射率测试,分析了热处理对VO2薄膜晶相成分与红外透射率相变特性的影响。实验分析表明,经热处理的VO2发生非晶态向晶态转变,单斜金红石结构VO2(011)晶体具有明显择优取向,晶粒尺寸均匀度提高,且薄膜的红外透射率具有明显相变特性,相变温度为60.5℃,3~5μm、8~12μm波段的红外透射率对比值达到99%,适合应用于红外探测器的激光防护研究。     

N型TOPCon晶硅太阳能电池光注入退火增效的研究

N型隧穿氧化层钝化接触(Tunnel Oxide Passivating Contacts,TOPCon)太阳能电池完成印刷烧结后,再经过光注入,效率有明显提升,主要表现在Voc(开路电压)及FF(填充因子)的提升.其机理在于通过温度和光照强度调节费米能级变化,控制H总量及价态来提高钝化性能.钝化膜层的质量、硅基体掺杂...     

上海深紫外自由电子激光装置波荡器磁场调整

 在对上海深紫外项目的波荡器建造过程中,应用亥姆霍兹线圈系统测量了全部单磁块,并使用模拟退火法对磁块进行组合排序优化,使反映磁场的成本函数下降了3个数量级。对一段波荡器进行了多次测量、调整,使积分场、峰峰值误差、位相误差等各项指标达到设计要求。     

退火对PECVD制备的掺磷硅薄膜及其电阻温度系数影响的研究

本文对采用PECVD技术制备的不同掺杂比掺磷硅薄膜在不同退火时间和温度下的结构和电阻温度系数进行了研究。拉曼散射光谱结果表明:未退火样品主要为非晶/微晶混合相;当退火温度从500℃上升到700℃,薄膜结构呈现出先向非晶相转变,后完全晶化的趋势,与此同时,电阻率和电阻温度系数随掺杂浓度及退火温度的增加而单调减小。文中我们采用Lu的模型对上述实验结果进行了解释,认为由Si-P键构成的晶界势垒高度的变化是上述实验结果的根本原因。     

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

Reverse current in diodes can be dominated by generation processes, depending exponentially on temperature according to the rate-limiting step in the generation process. In this report, the current-voltage-temperature (IVT) relationship is analyzed for several midwave infrared and long-wave infrared (MWIR x = 0.295, LWIR x = 0.233) Hg_1−x Cd _x Te (MCT) diodes. The energy varied from diode to diode. At high reverse biases, the energy tends toward the band gap energy. Close to zero bias, the energy ranged from 0.06 to 0.1 eV. Deep level transient spectroscopy (DLTS) showed a broad peak centered at 55–80 K for the MWIR MCT. Comparison of the DLTS spectrum to a simulation based on the energy and capture cross section from a rate window analysis shows that the peak is a band of traps. The capacitance transient amplitude increased as the filling pulse increased from 1 μs to 0.1 s, consistent with capture at a dislocation. A shift to lower temperatures for the peak was also observed when the diodes are cooled under forward bias. The shift is reversible, indicating that the traps consist at least partially of a bistable defect.     

多泵浦宽带拉曼光纤放大器优化设计的研究

文章以多泵浦拉曼光纤放大器的增益平坦度为切入点,分析了影响多泵浦FRA的增益平坦性的因素,罗列了几种不同的优化算法并着重介绍了遗传算法.研究表明,使用遗传算法优化宽带拉曼放大器是可行的.另外,使用的泵浦个数越多,所得平坦增益带宽越宽.但是,泵浦个数越多,成本也越高,计算量也越大.因此,我们要根据具体要求,选择合适的泵浦...     

退火条件对FeSiCoB薄膜应力阻抗效应的影响

为了提高FeCoSiB薄膜和FeCoSiB/Cu/FeCoSiB多层膜的磁弹性能,利用磁控溅射方法在玻璃基片上沉积制备薄膜样品,并在真空中退火。测试了不同温度退火后,薄膜样品的应力阻抗效应。结果表明,退火处理条件对薄膜的应力阻抗效应有较大的影响。在6.4kA·m–1磁场下,薄膜经300℃、40min退火处理后,单层FeCoSiB和多层FeCoSiB/Cu/FeCoSiB的应力阻抗效应分别为1.86%和8.30%。     

一种新的光刻机像质参数热漂移检测技术

提出了一种新的光刻机像质参数热漂移原位检测技术（TDFM）。详细分析了该技术利用镜像测试标记检测投影物镜最佳焦面热漂移与放大倍率热漂移的基本原理。实验结果表明TDFM技术可同时实现最佳焦面热漂移（FFT）与放大倍率热漂移（MFT）的精确测量。与现有的放大倍率热漂移检测技术相比，该技术有效地解决了放大倍率热漂移技术中放大倍率热漂移受最佳焦面热漂移影响的问题，简化了光刻机像质参数前馈校正的测试过程，测试成本与耗时均减少50％。