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51.
与传统的高压直流输电系统相比,轻型直流输电系统(HVDC Light)采用绝缘栅双极晶体管(IGBT)作为功率开关器件,能够对有功功率和无功功率进行独立的控制,具有调节迅速,稳定性高等优点。在研究轻型直流输电技术的工作原理和控制方法的基础上,设计了一个轻型直流输电系统,并在电磁暂态程序PSCAD/EMTDC环境下建立仿真模型,仿真实验结果验证了系统参数选择的合理性和控制方法的有效性。 相似文献
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53.
O. Elkeelany Author Vitae 《Integration, the VLSI Journal》2009,42(3):356-366
In the past three decades, tremendous Ethernet-related research has been done, which has led to today's ubiquitous Ethernet technology. On the other hand, with the emergence of new network needs, a new protocol, the IEEE 1394 standard serial bus (or Firewire) was introduced. Firewire is suitable for high-quality audio/video applications which do not perform well in the best-effort-based Ethernet technology. However, since Firewire is a serial bus, it has harsh cable length limitations as compared to Ethernet capabilities.In this paper, we present a novel on-chip system that receives Firewire video and transmits it in multicast mode using Ethernet protocol. A major advantage of this novel system is to utilize the existing Ethernet infrastructure to extend the range of Firewire video streaming to reach remote nodes and make it even accessible to nodes with a single Ethernet interface. This will have tremendous impact on Firewire applications such as deploying Firewire cameras in big-scale security-sensitive buildings or industrial facilities with image-based remote quality control.This novel chip utilizes the concept of Ethernet multicasting transmission mode for video streaming. The proposed chip design converts the IEEE 1394 isochronous traffic to the Ethernet multicast frame format via two off-chip asynchronous write and read buffers.The goal of this research is to design an On Chip Novel Video Streaming System that avoids performance bottlenecks in the software protocol conversion of these two important network protocols. The author decided to study these two networks because of their broad use and cable power provisioning capabilities. The novel system design is implemented using a customized field programmable gate array (FPGA), which enables the integration of various system components on one chip. The designed prototype is studied using both network monitoring tools and analytical techniques, to verify its function and compare it with the existing approaches.Performance measures show that the On Chip Novel Video Streaming System consumes less than 21 mW of power for 100 Mbps and 82 mW of power for 1 Gbps, and utilizes 57% of a Xilinx Spartan 2-100E-6FT256 FPGA resources. Hence, it is possible to incorporate further extensions. Experimental results show that 88% of the network utilization can be achieved, due to the use of the customized, FPGA-based design of bi-network traffic conversion. 相似文献
54.
Ga2O3/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga2O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS). 相似文献
55.
数字式干涉仪测向体制中的相位差信息在频域上提取,与传统的在时域提取相比能大大提高低信噪比条件下鉴相精度及对信号的适应能力。利用相位差信息的频域数字提取方法,实现了单片FPGA完成多通道相位信息的提取。与传统的计算机实现和DSP实现相比,不但提高了速度,而且设备量小,具有明显的优势。 相似文献
56.
《电子学报:英文版》2024,33(6)
The slow development of traditional computing has prompted the search for new materials to replace silicon-based computers.Bio-computers,which use molecules as the basis of computation,are highly parallel and in-formation capable,attracting a lot of attention.In this study,we designed a NAND logic gate based on the DNA strand displacement mechanism.We assembled a molecular calculation model,a 4-wire-2-wire priority encoder logic circuit,by cascading the proposed NAND gates.Different concentrations of input DNA chains were added into the system,resulting in corresponding output,through DNA hybridization and strand displacement.Therefore,it achieved the function of a priority encoder.Simulation results verify the effectiveness and accuracy of the molecular NAND logic gate and the priority coding system presented in this study.The unique point of this proposed circuit is that we cascaded only one kind of logic gate,which provides a beneficial exploration for the subsequent development of complex DNA cascade circuits and the realization of the logical coding function of information. 相似文献
57.
Yu‐Hsiang Chang Chia‐Wei Ku Yi‐Hua Zhang Hsiang‐Chen Wang Jung‐Yao Chen 《Advanced functional materials》2020,30(21)
The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns?1, high charge transfer efficiency of 89%, ON/OFF current ratio of 104, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi. 相似文献
58.
Mingjin Dai Kai Li Fakun Wang Yunxia Hu Jia Zhang Tianyou Zhai Bin Yang Yongqing Fu Wenwu Cao Dechang Jia Yu Zhou PingAn Hu 《Advanced Electronic Materials》2020,6(2)
Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high‐density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two‐dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α‐In2Se3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out‐of‐plane and in‐plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α‐In2Se3 based ferroelectric diode can reach up to 2.5 × 103. These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next‐generation multifunctional electronics. 相似文献
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60.
Yuhang Sun Junkyu Kim Neel Chatterjee Sarah L. Swisher 《Advanced Electronic Materials》2021,7(5):2001037
In metal-oxide thin-film transistors (TFTs), high-k gate dielectrics often yield a higher electron mobility than SiO2. However, investigations regarding the mechanism of this high-k “mobility boost” are relatively scarce. To explore this phenomenon, solution-processed In2O3 TFTs are fabricated using eight different gate dielectrics (SiO2, Al2O3, ZrO2, HfO2, and bilayer SiO2/high-k structures). With these structures, the total gate capacitance can be varied independently from the semiconductor–dielectric interface to study this mobility enhancement. It is shown that the mobility enhancement is a combination of the effects of areal gate capacitance and interface quality for disordered oxide semiconductor devices. The ZrO2-gated TFTs achieve the highest mobility by inducing more accumulation charge with higher gate capacitance. Surprisingly, however, when the gate capacitance is held constant, no mobility enhancement is observed with the high-k gate dielectrics compared to SiO2. 相似文献