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51.
针对光传输系统单波长信号全光加密的应用需求,基于流密码体制开展了光传输系统物理层全光加密技术的理论分析,设计了基于 SOA-XGM(半导体光放大器-交叉增益调制)的全光 A?B 逻辑门的实验方案,并在实验室搭建了实验系统。实现了速率为10 Gbit/s 的 A?B 逻辑处理,分析了探测光信号功率、泵浦光信号功率和 SOA 注入电流等主要参数对逻辑门输出信号质量的影响,实现了明文光信号的全光加密。 相似文献
52.
主要探讨FPGA在边缘检测中的运用,分析两种不同边缘检测算子对图像处理的效果。由于FPGA算法硬件处理速度快、可编程、可重配置等特性,使其在图像处理方面占有很大的优势。为此文章提出了运用FPGA实现边缘检测的方法,并且根据FPGA的并行流水线性,对Sobel、Prewitt边缘检测算子分别进行了FPGA设计与实现以及仿真,并且对两种边缘检测算子对图像处理的效果进行了比较。通过仿真分析得出,Sobel和Prewitt边缘检测算子都有平滑噪声的作用,Sobel边缘检测算子可以提供较为准确的边缘方向信息,Prewitt边缘检测算子,其边缘性较Sobel边缘检测算子完整,但它们的边缘定位精度有待提高,仿真中通过改变程序中的阈值可以得到不同的处理效果,这也是利用FPGA的优点,方便容易、速度也得到了提高,并且可编程、可重配置,使得FPGA在数字图像处理方面显得非常优越。 相似文献
53.
实现宽带压缩采样的结构有多种类型,在分析调制宽带转换器的采样结构的原理的基础上,针对稀疏多带信号的压缩采样,搭建了四通道的宽带压缩采样系统的原型系统平台,其中,混频调制信号是现场可编程门阵列硬件电路产生的序列。采用稀疏多频带信号作为系统的输入测试信号,并且利用另一已知的稀疏多带信号作为系统的同步信号,对宽带压缩采样原型系统进行系统仿真。该系统中的混频调制信号容易生成、实现结构简单、参数设置灵活。软件仿真及硬件测试,验证了该宽带压缩采样系统的硬件平台的正确性和可行性。 相似文献
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55.
本工作利用圆二色光谱研究了Ag+与Hg2+对4种代表性G-四链体DNA结构的破坏作用。结果表明Ag+可能通过与碱基G螯合从而破坏G-四链体结构;Hg2+能通过形成T-Hg2+-T碱基对,及其他方式破坏G-四链体结构。含巯基(-SH)的半胱氨酸与Ag+与Hg2+可以发生较强的配位作用,从而使被Ag+与Hg2+破坏后的G-四链体DNA结构得以回复。基于此,一个新颖的Ag+/Hg2+-半胱氨酸-DNA逻辑门得以构筑。 相似文献
56.
O. O. Soldatkin I. S. Kucherenko M. K. Shelyakina E. Soy K. Kirdeciler S. Öztürk N. Jaffrezic‐Renault B. Akata S. V. Dzyadevych A. P. Soldatkin 《Electroanalysis》2013,25(2):468-474
Different modifications of the zeolites Na+‐Beta and LTA were applied for improving the working characteristics of a urea biosensor. The bioselective membrane of the biosensor was based on urease and different zeolites co‐immobilized with bovine serum albumin on the surface of a pH‐FET. It was shown that the biosensors modified with the zeolites H+‐Beta30 and H+‐Beta50 are characterized by increased sensitivity to urea. The influence of the zeolite concentration on the sensitivity of the biosensors was studied. The optimal concentration of the zeolites H+‐Beta30 and H+‐Beta50 in the bioselective membrane was 15 %. Different variants of co‐immobilization of urease and zeolite H+‐Beta30 were studied and the optimal method was selected. Thus, a general conclusion is that the urea biosensor sensitivity can be improved using zeolite H+‐Beta30 for urease immobilization in the bioselective membrane. 相似文献
57.
A polymer-stabilised blue-phase liquid crystal display (PSBP-LCD) with double-side in-plane switching (DS-IPS) electrode structure is proposed. This structure shows the transflective characteristics because the bottom electrodes are made by aluminium material. For transflective displays, it exhibits a well-matched voltage-dependent transmission and reflection curves through designing the width and gap of the top electrodes. When a bias voltage is applied on the top electrodes, it exhibits as a good viewing angle controllable display. 相似文献
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59.
In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications. 相似文献
60.
In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor (GNRFET) is offered, which combines the advantages of high and low dielectric constants. In the proposed Two Different Insulators GNRFET (TDI-GNRFET), the gate dielectric at the drain side is a material with low dielectric constant to form smaller capacitances, while in the source side, there is a material with high dielectric constant to improve On-current and reduce the leakage current. Simulations are performed based on self-consistent solutions of the Poisson equation coupled with Non-Equilibrium Green's Function (NEGF) formalism in the ballistic regime. We assume a tight-binding Hamiltonian in the mode space representation. The results demonstrate that TDI-GNRFET has lower Off-current, higher On-current and higher transconductance in comparison with conventional low-K GNRFET. Furthermore, using a top-of-the-barrier two-dimensional circuit model, some important circuit parameters are studied. It is found that TDI-GNRFET has smaller capacitances, lower intrinsic delay time and shorter power delay product (PDP) in comparison with high-K GNRFET. Moreover, mobile charge and average velocity are improved in comparison with low dielectric constant GNRFET. The results show that the TDI-GNRFET can provide Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing near their theoretical limits. 相似文献