功率GaAs MESFET的热阻测试

阐述了功率ＧａＡｓＭＥＳＦＥＴ器件热阻测试中温敏参数ＶＧＳＦ和测试电流Ｉｍ的选取，给出了１～５Ｗ器件典型温敏参数的温度测试系数Ｍ与测试电流Ｉｍ的关系。讨论了测试延迟时间ｔｍｄ对△ＶＧＳＦ测量值的影响和三种校正方法。     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

双折射光纤中克尔效应及光纤－光学逻辑门

本文详细地研究了单模双折射光纤中的克尔效应．讨论了其应用于光纤－光学逻辑门的优点,给出了有关的理论分析和计算结果以实验装置,确定了强度型逻辑门的“１／０”状态,测出了输出光脉冲宽度．理论分析和实验结果符合良好．     

浮动电极对屏蔽栅沟槽型MOSFET特性的影响

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm²、特征栅漏电容为4.72 pF·mm^-2的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

IGBT芯片静态输出曲线连续测量方法

绝缘栅双极型晶体管(IGBT)芯片的静态输出曲线是考核其能量损耗及指导多芯片并联设计的重要指标之一。现有测量IGBT静态输出曲线的方法多采用商用化的功率器件分析仪,然而商业化功率器件分析仪存在价格昂贵、夹具单一的问题。亟需开发一种简单、快速、有效的静态输出曲线测量方法。面向高压IGBT芯片,提出一种新的静态输出曲线连续测量方法及测试电路,有效减小了IGBT芯片的电导调制效应和温升效应对静态输出曲线的影响。通过实时测量动态过程中的电压及电流,可以快速得到IGBT芯片静态输出曲线。通过对比本文连续法与功率器件分析仪的测量结果,证明了所提方法的有效性。     

5G 功放DPD 的FPGA 宽带实现及自动优化

5G 宽带功放数字预失真器(DPD)的FPGA 实现过程中,常遇到数字处理带宽不够和资源有限问题,对 此,文中提出一种基于双路并行数据流的数字预失真带宽扩展方法和基于Zynq Ultrascale+ MPSoC 的自动化模型优化 验证方法,可快速实现对5G 宽带功放线性化方案的优化。使用该并行处理结构的数字预失真器,克服了数字电路最 大时钟频率造成的对FPGA 线性化带宽的限制,使得数字预失真电路在每个时钟周期内可以处理更多的数据,不仅有 效地增加了数字处理带宽,而且降低了DPD 的功耗。然而,这种带宽增加以消耗更多硬件资源为代价,对此,文中同时 提出了对预失真非线性模型的在线自动优化方法,以简化非线性模型、降低DPD 的硬件资源开销。最后,在Zynq Ultrascale+ FPGA 实验平台上实现了具有两路并行数据处理的I-MSA 自优化数字预失真电路,采用100 MHz 的5G 新无 线电(NR)信号在2. 6 GHz 功率放大器上进行线性化实验验证,获得了满意的预失真性能,验证了所提方法的有效性。     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Phenomenology of nonlocal cellular automata

Dynamical systems with nonlocal connections have potential applications to economic and biological systems. This paper studies the dynamics of nonlocal cellular automata. In particular, all two-state, three-input nonlocal cellular automata are classified according to the dynamical behavior starting from random initial configurations and random wirings, although it is observed that sometimes a rule can have different dynamical behaviors with different wirings. The nonlocal cellular automata rule space is studied using a mean-field parametrization which is ideal for the situation of random wiring. Nonlocal cellular automata can be considered as computers carrying out computation at the level of each component. Their computational abilities are studied from the point of view of whether they contain many basic logical gates. In particular, I ask the question of whether a three-input cellular automaton rule contains the three fundamental logical gates: two-input rules AND and OR, and one-input rule NOT. A particularly interesting edge-of-chaos nonlocal cellular automaton, the rule 184, is studied in detail. It is a system of coupled selectors or multiplexers. It is also part of the Fredkin's gate—a proposed fundamental gate for conservative computations. This rule exhibits irregular fluctuations of density, large coherent structures, and long transient times.     

基于CAM的雷达信号实时预分选硬件实现

CAM(内容可寻址存储器)是一种快速匹配存储器件,在通信、雷达等许多领域有着广泛的应用。在介绍CAM基本原理的基础上,例举了一种基于CAM实现关联比较器的设计方法,通过仿真验证了设计的正确性,基本上实现了雷达信号的纯硬件快速预分选,达到了实时性和可靠性要求。