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71.
Nanoporous aluminum oxide (Al2O3) films with uniform porous size of 45 nm prepared by the electrochemical process in inorganic acid medium were implanted at room temperature (RT) with 120 keV Ge+ ions with a fluence of 1.2×1016 cm−2. The nucleation and growths of Ge nanoparticles, were obtained by thermal annealing of the implanted samples at the temperature range of 200-600 °C. The size and distribution of the nanoparticles were characterized by photoluminescence (PL) measurements. The photoluminescence measurements as a function of the annealing temperature shows that at low annealing temperature (200 °C), the sample presents a low intensity and broad emission band centered at 5456 Å consistent with emission band characteristics of nanocluster of Ge with diameter in the range of 4-8 nm, as the annealing temperature increases to 400 °C the PL intensity increases by a factor of almost 20 and the emission band suffers a small red shift. The intensity increases can be related to the increase of the number of Ge nanocluster. At the annealing temperature of 600 °C, the emission band is considerably red shifted by almost 172 Å and the emission intensity decreases significantly, strongly suggesting that nanocrystalline Ge having a character of direct optical transitions exhibits the visible photoluminescence. 相似文献
72.
The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated
using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried
amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing
for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples)
and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance
of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly atT > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additionaln-type defects in the bulk of the materials.
Presented at the 1985 Electronic Materials Conference, Boulder, CO, June, 1985. 相似文献
73.
高剂量离子注入直接形成Ge纳米晶的物理机理 总被引:1,自引:1,他引:0
研究了单束双能高剂量Ge离子注入、不经过退火在非晶态SiO2薄膜中直接形成镶嵌结构Ge纳米晶的物理机制.实验中利用不加磁分析器的离子注入机,采用Ge弧光放电离化自动形成的Ge+和Ge2+双电荷离子并存的单束双能离子注入方法,制备了1e16~1e18cm-2多种剂量Ge离子注入的Si基SiO2薄膜样品.用GIXRD表征了Ge纳米晶的存在,并仔细分析得到了纳米晶形成的阈值剂量.通过TEM分析了Ge纳米晶的深度分布和晶粒尺寸.用SRIM程序分别计算了双能离子在SiO2非晶层的射程和深度分布,与实验结合,得到纳米晶形成的物理机制,即纳米晶的形成与单束双能离子注入时Ge+和Ge2+相互碰撞产生的能量沉积在SiO2中形成的局域高温有关. 相似文献
74.
75.
《中国物理 B》2021,30(5):56106-056106
Lattice defects induced by ion implantation into Si C have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in Si C is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-ke V H_2~+ implantation and thermal treatment in the microstructure of 6 H-Si C single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700℃ to 1100℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study. 相似文献
76.
Ren-Jie Liu 《中国物理 B》2021,30(8):86104-086104
The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence. 相似文献
77.
Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology
The influence of shallow trench isolation (STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon struc-ture non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology. 相似文献
78.
辣根过氧化酶(HRP)在Co/NH2/ITO离子注入电极上有一对良好的氧化还原峰,峰电位分别为Epc=-0.2 V,Epa=-0.01 V(vsAg/AgCl)。该修饰电极对H2O2具有催化作用,可以用作H2O2的生物传感器,峰电流与H2O2的浓度分别在1.0×10-10~2.0×10-8mol/L和2.0×10-8~1.0×10-7mol/L范围内呈线性关系,线性回归方程分别为Ip(mA)=2.2986+0.06632c(nmol/L)和Ip(mA)=3.5788+7.3053E-4c(nmol/L),相关系数分别为0.9972和0.9688。检出限为1.0×10-10mol/L。 相似文献
79.
80.
采用三维粒子模拟模型研究了有限尺寸方靶等离子体浸没离子注入过程中的鞘层动力学行为,得到了鞘层尺寸和方靶表面的注入剂量、注入能量以及注入角度等信息,并与二维无限长方靶注入结果进行了对比.模拟结果表明,与无限长方靶不同,有限尺寸方靶周围鞘层很快扩展为球形,但鞘层厚度明显减小.在模拟的50ω-1pi时间尺度内靶表面注入剂量很不均匀,中心区域注入剂量最小,四个边角附近位置注入剂量最大.这种剂量不均匀性是由于鞘层扩展为球形,使得鞘层内离子被聚焦并注入到边角附
关键词:
等离子体浸没离子注入
数值模拟
三维粒子模拟
有限尺寸方靶 相似文献