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排序方式: 共有1384条查询结果,搜索用时 687 毫秒
1.
M. Benkerri R. Halimi A. Bouabellou N. Benouattas 《Materials Science in Semiconductor Processing》2004,7(4-6):319
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at. cm−2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed. 相似文献
2.
K. P. Lee S. J. Pearton M. E. Overberg C. R. Abernathy R. G. Wilson S. N. G. Chu N. Theodoropolou A. F. Hebard J. M. Zavada 《Journal of Electronic Materials》2002,31(5):411-415
In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron
microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing
showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In
these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation
are similar to those reported for Fe doping during epitaxial growth of GaN. 相似文献
3.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
4.
NMOS器件两次沟道注入杂质分布和阈电压计算 总被引:1,自引:1,他引:0
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数,给出了表面浓度与工艺参数之间的模拟关系式,以峰值浓度为强反型条件计算了开启电压,文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。 相似文献
5.
6.
用射频等离子体方法在玻璃基底上制备的类金刚石(DLC)薄膜,采用离子注入法掺氮,并对掺氮DLC薄膜紫外(UV)辐照前后的性能变化进行了研究。研究结果表明:随氮离子注入剂量及UV辐照时间的增加,位于2 930cm-1附近的SP
3C-H吸收峰明显变小,而位于1 580cm-1附近的SP2C-H吸收峰则明显增强,薄膜的电阻率明显呈下降趋势;随UV辐照时间的增加,位于1 078cm-1附近的Si-O-Si键数量及位于786cm-1附近的Si-C键数量明显增加。即氮离子注入和UV辐照明显改变了DLC薄膜的结构与特性。 相似文献
7.
In the present study, proteins and glycoproteins of mouse embryos at 2-cell,morula and blastocyst stages were analyzed.The techniques of ~(35)S-Met incorporation,ConA antiserum-precipitating ConA-binding proteins, mini-2D-electrophoresis, fluorography,video densitometer scanning and the computer-lmage system were used for analyses.Results of the investigations indicated that proteins and glycoproteins were synthesized by the embryos in a gradual increase manner from 2-cell to blastocyst. A relatively large amount of glycoproteins was synthesized during the morula and blastocyst stages.Two specific small glycoproteins respectively with molecular weights about 6500 and 9000 and PIs at 5.0 and 6.5 were apparently synthesized in the blastocyst but not in the 2-cell or the morula. 相似文献
8.
L. Torrisi A.M. Mezzasalma J. Badziak J. Wolowski G. Franco 《Applied Surface Science》2006,252(24):8533-8538
High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438 nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230 J) and the short pulse duration (400 ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6 × 106 J/cm2, the maximum ion energy was about 600 keV and the maximum charge state was about 27+.In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5 MeV helium ions, Auger electron spectroscopy (AES) with 3 keV electron beam and 1 keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis. 相似文献
9.
10.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献