Boron implantation and epitaxial regrowth studies of 6H SiC

Implantation of B has been performed into an epitaxially grown layer of 6H SiC, at two different B concentrations, 2×10¹⁶ cm⁻³ and 2×10¹⁸ cm⁻³. Subsequently, an epitaxial layer was regrown on the B implanted layer. The samples were investigated by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). In the highly B-doped layers plate-like defects were found, associated with large strain fields, and an increased B concentration. These defects were stable at the originally implanted region during regrowth and at anneal temperatures up to 1700°C. In the samples implanted with the lower B concentration, no crystal defects could be detected by TEM. No threading dislocations or other defects were observed in the regrown epitaxial layer, which shows the possibility to grow a layer with high crystalline quality on B implanted 6H SiC. By SIMS, it was found that B piles up at the interface to the regrown layer, which could be explained by enhanced diffusion from an increased concentration of point defects created by implantation damage in the region. B is also spread out into the original crystal and in the regrown layer at a concentration of below 2×10¹⁶ cm⁻³, with a diffusion constant estimated to 1.3×10⁻¹² cm²s⁻¹. This diffusion is most probably not driven by implantation damage, but by intrinsic defects in the grown crystal. Our investigation shows that the combination of implantation and subsequent regrowth techniques could be used in SiC for building advanced device structures, with the crystal quality in the regrown layer not being deteriorated by crystal defects in the implanted region. A device process using B implantation and subsequent regrowth could on the other hand be limited by the diffusion of B.     

Simultaneous observation of the triangular and honeycomb structures on highly oriented pyrolytic graphite at room temperature: An STM study

Scanning tunneling microscopy (STM) was used to study the surface structures of dry-prepared and di-chloroethane-treated HOPG samples. Both triangular and honeycomb structures were simultaneously observed with the same tip at room temperature around a strand (grain boundary) on the HOPG surface. This observation did not support the tip effect in STM imaging explanation for HOPG in literature. A general layer-sliding model was utilized to explain the experimental results: sliding of the HOPG topmost layer was used to explain the origins of the triangular and honeycomb structures, and molecule intercalation into inter-layer spacing between the first and second layers of HOPG induced inhomogeneous deformation of the HOPG topmost layer that accordingly generated the Moiré patterns of the HOPG sample in di-chloroethane.     

Observation of the V2O5(001) surface using ambient atomic force microscopy

Constant force images of the V₂O₅(001) surface were recorded in ambient conditions with atomic force microscopy. All images exhibit the 11.5 Å × 3.5 Å. periodicity expected for a bulk terminated surface. However, images reveal differences from the ideal structure. The experimental results are interpreted in terms of preferential adsorption sites for water molecules. Because these sites are thought to influence the catalytic properties of the surface, their characterization is an important step towards understanding how the atomic-scale structure of a surface influences its properties.     

Synthesis of high‐molecular‐weight linear methacrylate copolymers with spiropyran side groups: Conformational changes of single molecules in solution and on surfaces

P(BMA‐co‐HEMA‐spiropyran) was synthesized by reversible addition fragmentation chain transfer (RAFT) polymerization of butyl methacrylate (BMA) and 2‐(trimethylsilyloxy)‐ethyl methacrylate (HEMA‐TMS), removal of the TMS‐protective groups, and the polymer analogous esterification of the hydroxyethyl side chains with a spiropyran containing a carboxylic acid group. UV‐induced conformational changes of the synthesized macromolecules and low‐molecular‐weight spiropyran molecules were studied. Rate constants and half‐life times of the ring closure reaction from zwitterionic merocyanine to the spiropyran species were determined in the presence and absence of mica‐dispersed particles in toluene both with the free spiropyran and the polymer‐bound spiropyran. Scanning force microscopy was used to visualize the conformation of spiropyran‐decorated single macromolecular chains and agglomerated polymer‐bound merocyanine adsorbed on mica. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1274–1283, 2009     

激光扫描显微镜的探讨

本文探讨在满足象素密度要求的条件下,充分利用电视监视器可分辨光点数,具有大扫描视场的激光扫描显微镜的设计。     

On the reliability of scanning probe based electrostatic force measurements

The dimensions of semiconductor devices rapidly decreasing, the detection and control of spatial inhomogeneities of material properties on a sub-μm scale becomes essential.For mapping various electrical properties with nearly nm-resolution, scanning probe techniques appear to be ideally suited. However, data evaluation always involves a transfer from measured to real properties by a device depending convolution procedure.We report on our results for different modes of electrical measurements, namely scanning Kelvin probe microscopy (SKM) and scanning capacitance microscopy (SCM) on various sample systems discussing the influence of experimental parameters. In addition, results of finite element simulations on this topic are presented.It turns out that the averaging function correlating real and measured data may appear quite simple, thus making a reliable reconstruction possible. On the other hand, the existence of surface charges can drastically change the results.     

On the Nature of the Interface between Ag<Subscript>3</Subscript>Sn Intermetallics and Sn in Sn-3.5Ag Solder Alloys

We report on the nature of the orientation of Ag₃Sn and the Ag₃Sn/Sn interface in Sn-3.5Ag solder. Orientation imaging microscopy (OIM) and transmission electron microscopy (TEM) were used to characterize the orientation and nature of the interface, respectively. OIM and TEM showed that Sn-3.5Ag containing spherical Ag₃Sn particles does not have a preferred orientation with respect to the Sn matrix. However, needle-like Ag₃Sn formed during slower cooling appeared to have a preferred orientation within individual Sn colonies. The interface between Sn and Ag₃Sn appeared to be incoherent, as confirmed by high-resolution TEM analysis.     

On the geometric autocorrelation function of polycrystalline materials

Herein we derive an expression for direct determination of the geometric autocorrelation function W of a polycrystalline material from images of its grain boundary network (e.g., those delivered by orientation imaging microscopy). We also obtain an identity that relates the mean linear intercept function to a directional derivative of the geometric autocorrelation function. These formulae were applied to examine whether a widely-used formula for W, particularly in theoretical studies of attenuation of elastic waves in polycrystalline media, would be valid for the grain boundary structure of a commercial aluminum alloy. The conclusion was negative.     

飞秒激光脉冲与金属光阴极相互作用

本文从理论上分析了飞秒激光与光阴极相互作用过程，采用双温模型分析了飞秒激光脉冲辐照下金属薄膜的温度效应。通过建立一个简单的光电效应模型，获得了最佳的金属光阴极厚度，通过该模型可以发现，产生的光电流对在飞秒激光脉冲辐照下的电子温度和晶格温度有着很大的依赖关系。     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.