扫描力显微术在高聚物薄膜玻璃化转变研究中的应用

简述了高聚物薄膜玻璃化转变的复杂性，并结合文章作者的的一些研究结果介绍了扫描力显微术(SFM)在研究高聚物玻璃化转变中的一些方法，包括观察高聚物薄膜形貌的变化，测量其摩擦力、粘附力和弹性模量等物理量的变化，最后指出SFM是研究高聚物薄膜玻璃化转变的有力工具。     

Structural characterization of nanopatterned surfaces

In this work, chemically and topographically nanopatterned surfaces were produced by a top-down processing approach for biosensing devices. The nanopatterning was the result of the combination of plasma polymerisation (pp) of biofunctional materials and colloidal lithography techniques. The morphological and chemical properties induced by the plasma deposition-etching treatment were characterised by optical method combining ellipsometry and Fourier Transform Infrared spectroscopy studies. This method supported by atomic force microscopy measurements, allowed the full optical characterization of each step of the top-down process. The optical characterization of the end-up nanopatterned samples demonstrated that the chosen process is able to produce well-defined nanostructured surfaces with controlled chemical and morphological properties.     

Solid state phase equilibria in the Gd-Si-B system at 1270 K

Solid state phase equilibria in the ternary Gd-Si-B phase diagram have been proposed at 1270 K using X-ray diffraction, scanning electron microscopy and electron probe microanalysis. Prior to this work, the binary systems Gd-B, Gd-Si and Si-B have also been reinvestigated. The main characteristic of the ternary diagram is the occurrence of two new ternary compounds Gd₅Si₂B₈ and Gd₅Si₃B_0.64. The former crystallizes in tetragonal symmetry, space group P4/mbm with unit cell parameters a=7.2665(3), c=8.2229(7) Å, the second one presents hexagonal symmetry, space group P6₃/mcm with unit cell parameters a=8.5080(4),c=6.4141(2) Å. The X-ray structures of the two structurally related phases Gd₅Si₃B_0.64 and host binary Gd₅Si₃ have been refined from three-dimensional single-crystal intensity data to the final R values of 0.036 (R_w=0.046) and 0.046 (R_w=0.055) for 457 and 401 reflections, respectively with [F>4σ(F)]. Both structures exhibit the Mn₅Si₃-type structure, with in addition for Gd₅Si₃B_0.64 a partial occupancy by boron of the normally vacant interstitial site at the center of the Gd₆ octahedron, which corresponds to the origin of the unit cell. Bonding between the interstitial boron atoms and the gadolinium ones forming the Gd₆B polyhedra is indicated by the decrease in the corresponding Gd-Gd distances and consequently in the unit cell volume. Finally, the Gd-Si-B phase diagram is compared with the previously reported Er-Si-B, at 1070 K.     

软x射线近贴显微技术

软x射线近贴显微技术不但可使活的生物样品成象,分辨率高于光学显微镜,而且人为的样品准备程序在该技术中都可避免。本文描述了用高功率激光打靶产生的等离子体作为软x射线源而进行的近贴显微研究,并得到了分辨率好于1μm的结果。     

Directional crystallization and self-assembling initiated by mechanical shock or electron beam in nanocrystalline Co-C and Fe-C films

We investigated iron and cobalt films with 20% carbon concentration with nanocrystalline structure. One of the aims of this work is to analyze the physical nature of high-speed structural self-assembling as often happens in explosive crystallization processes in these films.     

Chemical imaging in biology and medicine using ion microscopy

The ability to quantitatively map the distribution of elements on the micrometer scale and smaller with high sensitivity and isotopic discrimination is unique to ion microscopy. The information contained in ion images can be crucial to the study of the solid state, where chemical heterogeneity is often directly related to observed behavior. The tools of digital image processing allow the extraction of quantitative information from the image data. These techniques coupled with improved instrumentation for the detection of ion images drastically increase the problem solving capabilities of the ion microscope. The use of such methods and instrumentation in the ion microscopic analyses of cell cultures and tissues of biological and biomedical relevance will be discussed.     

Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces.     

Basic study of the gelation of dimethacrylate‐type crosslinking agents

An investigation was made of the gelation of dimethacrylate‐type crosslinking agents in view of an application for separation media. The study mainly centered on a crosslinking agent, glycerol dimethacrylate (GDMA), which is relatively hydrophilic because of a hydroxyl group in the middle of its structure. The gelation of GDMA was compared with that of other hydrophobic crosslinking agents such as ethylene glycol dimethacrylate and 1,6‐hexanediol dimethacrylate. The diluents used in the study were toluene, toluene with methanol, and cyclohexanol. The gelation was observed in real time with a charge coupled device camera and dynamic light scattering (DLS). Also, the separated dry gels were extensively characterized with scanning electron microscopy, BET (N₂ absorption and desorption isotherm), and Fourier transform infrared. DLS analysis showed a stronger molecular interaction of GDMA gelation in toluene, whereas this interaction was much weaker in an alcoholic solvent such as toluene with methanol or cyclohexanol. This indicated that GDMA gelation might proceed through hydrogen bonding as well as a crosslinking reaction of vinyl groups. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 949–958, 2006