Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

In the very large scale integration (VLSI) technology, the need for high density and high performance integrated circuit (IC) chip demands advanced processing techniques that often result in the generation of high energy particles and photons. Frequently, the radiation damage are introduced by these energetic particles and photons during device processing. The radiation damage created by x-ray irradiation, which can often occur during metal sputtering process, has been shown to potentially enhance hot-carrier instability if the neutral traps which act as electron or hole traps in the silicon dioxide is not annealed out. In this paper, we investigate the effects of annealing using different hydrogen contents and temperatures on the device characteristics and hot carrier instability of 0.5 μm CMOS devices after 1500 mJ/cm² synchrotron x-ray irradiation. Three different annealing conditions were employed; 400° C H₂, 450° C H₂, and 400° C H₂ + N₂. It is found that for all three different hydrogen anneals the normal characteristics of irradiated CMOS devices can be effectively recovered. The hot-carrier instability of bothp- andn-channel MOSFETs are significantly enhanced after x-ray irradiation due to the creation of neutral traps and positively charged oxide traps. After high H₂ (100%) concentration anneals at 450° C, the hot-carrier instability in irradiatedn-channel devices is greatly reduced and comparable to the non-irradiated devices. Although the hot-carrier instability inp-channel devices is also significantly reduced after annealing, the threshold voltage shifts are still enhanced as compared to the devices without exposure to x-ray irradiation during maximum gate current stress. For those non-irradiated, but hydrogen-annealedp-channel devices, the hot-carrier instability was observed to be worse than the non-irradiated device without hydrogen annealing.     

热核的热稳定曲线

从核极限温度的角度研究了热核的热稳定性.采用Skyrme相互作用力计算热核同位素的极限温度,得到的极限温度的同位素分布呈现出倒置抛物线的趋势,与中能重离子反应多重碎裂中同位素产额分布的实验结果具有一致的行为表现.系统地计算了从轻到重的一系列元素极限温度的同位素分布,并从中抽取出热核的热稳定曲线.与β稳定线相比,热核的热稳定线更加偏丰中子.     

热壁外延ZnSe单晶薄膜

介绍了一种结构更加简单的热壁外延装置,以及用该装置在GaAs(100)面上生长ZnSe单晶外延层的工艺。扫描电镜和X射线衍射分析表明用该装置生长的ZnSe单晶外延层是比较理想的。     

热塑料板膜工艺与热塑料教具

热塑料板膜工艺是用热成型方法制作单件塑料教具和塑料配件的一种技术，它为无塑料制品生产能力的大、中院校物理、化学、生物实验室在研制教学仪器或做仿真制品时提供可行的石膏——锡模方法．教师采用该工艺，可在无现成模具和无注塑设备的条件下生产塑料教具，并可为计算机虚拟教学，提供实体模型．     

Isothermal crystallization kinetics and spherulitic morphology of poly(4‐hydroxybutyric acid‐alt‐glycolic acid)

Isothermal crystallization behavior of a new regular polyester constituted by glycolic acid and 4‐hydroxybutyric acid units is studied by means of differential scanning calorimetry and hot‐stage optical microscopy. A wide range of crystallization conditions were experimentally accessible, allowing various morphological features to be observed and accurate estimates made of characteristic growth parameters, including radial growth and nucleation rates. Three‐dimensional spherulitic growth from heterogeneous nuclei is deduced from the Avrami analysis, whereas optical micrographs reveal two different spherulitic textures that agree with the existence of two crystallization regimes. These can be well distinguished from the breaks observed in the Lauritzen and Hoffman plots when the linear crystal growth rate or the overall crystallization rate is considered. Ringed and nonringed spherulites with negative and positive birefringence, respectively, can be obtained depending on crystallization conditions and regimes. The studied polyester shows rather complex melting behavior which is interpreted in terms of a recrystallization process involving the two different kinds of spherulites. This study allows polymorphism to be discounted. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 2640–2653, 2007     

微粒群算法及其在热轧生产调度中的应用

针对整数规划问题的特点,提出了一种在整数空间中进行进化计算的PSO算法,使微粒群的进化限于整数空间。给出了热轧生产调度问题的最优轧制单元数学规划模型。并将该方法成功应用于最优轧制单元求解。     

Beitrag zur Prüfung metallischer Werkstoffe im Torsionsversuch

Zusammenfassung Der Torsionsversuch eignet sich zur Untersuchung des plastischen Verhaltens von Metallen bei erhöhten Temperaturen, wenn die Fließspannung stark von der Umformgeschwindigkeit abhängt. Aus der gemessenen Drehmoment-Drehwinkel-Kurve wird die Fließkurvek _f () berechnet. Hierfür wird ein Fließkriterium benötigt, dessen Unsicherheit im allgemeinen größer ist als alle Meßfehler. Diese Unsicherheit geht aber nicht in die berechnete Dehngeschwindigkeitsempfindlichkeit ein, die somit als Hauptergebnis des Versuches anzusehen ist.Um die Bedingungen technischer Warmumformung zu simulieren, wird die Verwendung extrem kurzer Proben (flacher Scheiben) empfohlen, womit sehr hohe Umformgeschwindigkeiten erreicht werden können. Für die Auswertung derartiger Versuche ist die wirksame Länge der kurzen Proben — experimentell oder semiempirisch — zu bestimmen und die Kerbwirkung zu berücksichtigen. Im Gegensatz zur herkömmlichen Vorgehensweise wird empfohlen, die örtliche Spannung und Verzerrung nicht für die Mantelfläche der Probe zu berechnen, sondern für einen kritischen Radialabstand im Innern der Probe, für den die Schiebung von der Kerbwirkung unabhängig ist, so daß sich die zuverlässigsten Werte ergeben.

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Summary The torsion test is often used for studying the plastic deformation of metals at elevated temperatures when stress depends strongly on the strain rate. From the measured torque-twisting angle curve, the stress-strain curvek _f () has to be calculated. For this purpose a yield criterion has to be used the uncertaintly of which normally exceeds all experimental errors. This uncertaintly, however, does not propagate into the calculated strain rate sensitivity which therefore may be considered as the main result of the torsion test.For simulating the conditions of technical hot forming processes, the use of extremely short test pieces (flat discs) by which very high strain rates can be obtained is recommended. For evaluating the test data the efficient lenght of short specimens has to be determined. In opposition to the conventional procedure of test evaluation, it is recommended not to calculate stress and strain for the surface of the specimen but for a critical radius for which strain is independent of the notch effect so that the most reliable values are obtained.

Mit 5 Abbildungen     

Fabrication and surface enhanced Raman spectroscopy of single Au@SiO2 dimers linked by benzenedithiol

Metal nanoparticle dimers with controllable gap distance have attracted considerable attention because of their promising application in plasmonics. Generally, gaps with nanometer or subnanometer dimensions generate localized surface plasmon resonance (LSPR) coupling effect, thus contributing to a strong electromagnetic field for improving surface enhanced Raman scattering (SERS) effect. Here, we developed a facile approach to fabricate Au@SiO₂ dimers through the steric hindrance effect, in which the SiO₂ shell functioned as a block and a rigid dithiol molecule was employed as linker. The thickness of the SiO₂ shell played a critical role in improving the yield of dimers. The dimerization efficiency increased significantly as the shell thickness decreased to ~1 nm. When 1,4‐benzenedithiol was used as linker molecule, the yield of dimers was ~30%. Few dimers were obtained when mecaptobenzonic acid was used as linker. A thicker shell is associated with a low yield of dimer, whereas a thinner shell resulted in the formation of multimers and linear structures. The low number of linker molecules on the exposed area of monodisperse single nanoparticles and the lack of LSPR coupling effect (‘hot spots’) resulted in the disappearance of SERS signals of the linkers. The estimated SERS enhancement factor was about eight fold because of the strong coupling effect in the gap of the dimer with the distance of the dithiol molecular length. From the above results, SERS combined with SEM could be developed into powerful tools for monitoring the formation of dimers and positioning of single dimers. It may aid the control of assembly of Au nanoparticles and in probing key issues about SERS enhancements. Copyright © 2015 John Wiley & Sons, Ltd.     

Two polymorphs of 5‐cyclohexyl‐5‐ethylbarbituric acid and their packing relationships with other barbiturates

Polymorph (Ia) (m.p. 474 K) of the title compound, C₁₂H₁₈N₂O₃, displays an N—H...O=C hydrogen‐bonded layer structure which contains R₆⁶(28) rings connecting six molecules, as well as R₂²(8) rings linking two molecules. The 3‐connected hydrogen‐bonded net resulting from these interactions has the hcb topology. Form (Ib) (m.p. 471 K) displays N—H...O=C hydrogen‐bonded looped chains in which neighbouring molecules are linked to one another by two different R₂²(8) rings. Polymorph (Ia) is isostructural with the previously reported form II of 5‐(2‐bromoallyl)‐5‐isopropylbarbituric acid (noctal) and polymorph (Ib) is isostructural with the known crystal structures of four other barbiturates.     

无线传感器网络自适应区域路由算法

2009年8月,随着‘感知中国’的提出,国内众多学者对无线传感器网络开展了日益深入的研究,而节省网络能耗则是研究的首要问题。主要针对延长传感器网络生存时间、增强网络的可靠性的目标,提出一种自适应区域路由算法（ARRA）,它包括对WSN进行区域规划、区域自治以及区域负载均衡三个方面。分析和仿真同时表明,ARRA实现了传感器网络的能量均衡,降低了网络能耗,并能提升某些热点区域的生存周期和可靠性。