埋磁芯PCB产品研究开发

随着PCB行业发展步入系统封装(SOP)阶段,PCB无源器件隐埋技术也成当今研究的热点。我司的埋铜技术的研究已经较成熟,但是对于磁芯的埋入还没涉及过,而目前电源部分电感大都需要手工贴装,工作效率低,存在焊接焊点不良等风险,不利于产品设计小型、高密化,所以对在PCB中埋入磁芯的研究很有必要。在文章中,我们得出磁芯埋入的控制方法,使产品能够满足客户对电感的要求。     

Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

Charge injection at metal/organic interface is a critical issue for organic electronic devices in general as poor charge injection would cause high contact resistance and severely limit the performance of organic devices. In this work, a new approach is presented to enhance the charge injection by using atomic layer deposition (ALD) to prepare an ultrathin vanadium oxide (VO_x) layer as an efficient hole injection interlayer for organic field‐effect transistors (OFETs). Since organic materials are generally delicate, a gentle low‐temperature ALD process is necessary for compatibility. Therefore, a new low‐temperature ALD process is developed for VO_x at 50 °C using a highly volatile vanadium precursor of tetrakis(dimethylamino)vanadium and non‐oxidizing water as the oxygen source. The process is able to prepare highly smooth, uniform, and conformal VO_x thin films with precise control of film thickness. With this ALD process, it is further demonstrated that the ALD VO_x interlayer is able to remarkably reduce the interface contact resistance, and, therefore, significantly enhance the device performance of OFETs. Multiple combinations of the metal/VO_x/organic interface (i.e., Cu/VO_x/pentacene, Au/VO_x/pentacene, and Au/VO_x/BOPAnt) are examined, and the results uniformly show the effectiveness of reducing the contact resistance in all cases, which, therefore, highlights the broad promise of this ALD approach for organic devices applications in general.     

高峰值功率自准直脉冲Nd:YAG激光加工无锥度直孔研究

利用改进的脉冲Nd:YAG激光器,对激光冲击打孔加工无锥度直孔进行了实验研究。在优化激光脉冲峰值功率和脉冲能量、辅助气压参数的基础上,通过比较实验证明,能量递增组合脉冲是实现无锥度直孔加工的有效方式,增加脉冲组合中脉冲的个数可加工出负锥度的孔;激光焦点位置是影响孔锥度的重要因素,焦点位于材料表面上方1.1~1.7 mm有利于减小锥度。在厚度为1.5,3.0 mm的镍基高温合金材料上,获得孔径分别为480,510μm的直孔,重复打孔孔径误差约30μm,孔锥度<1%。给出了可实用于激光冲击打孔的直孔加工方法和脉冲激光器,并可用于其他材料的加工。     

用于激光内雕中的特殊构型谐振腔研究

要实现激光内雕,激光束必须具有数个纳秒量级窄脉宽、数十兆瓦高峰值功率,同时也要具有发散度恒定不变、大深径比的环状聚焦光束。因此,研究和设计了具有特殊构型谐振腔的电光调QNd：YAG激光器。特殊构型腔的关键部件是特殊输出耦合器,其中,镀全反膜层玻璃片的小孔孔径是关键参量。特殊输出耦合器保证了光子在腔内（小孔端口到全反镜之间的距离）往返一周必定逸出腔外,从而使输出光脉冲的宽度为确切的极小数值。     

用于医学成像的碲锌镉单极型探测器的研究进展

碲锌镉(CdZnTe)半导体材料具有探测效率高、能量分辨率高和体积小重量轻的特点,是公认的最有希望成为下一代伽马射线探测装置的材料。然而,空穴俘获导致的电荷收集不完全限制了碲锌镉半导体探测器的性能。解决空穴俘获最有效的方法是单极型探测器技术。文章首先简要介绍半导体探测器中电荷收集的相关理论,然后重点阐述单极型探测器技术的实现方法,包括各种电极的结构设计原理、典型的探测器原型机介绍、性能特点及其结构设计的优缺点。最后简要展望了碲锌镉半导体探测器未来的发展方向。     

激光破岩特性研究

本文对强激光应用于油气井下进行激光射孔作业进行了研究,对比了光纤激光器与二氧化碳激光器在破岩效率上的区别,并从数值模拟和实验两方面研究了岩石受激光照射后的温度场分布以及岩石内部孔洞形状的成因。     

利用多阱结构改善有机电致发光器件效率

将N,N'-bis-(1-naphthy1)-N,N'-dipheny-1,1'bipheny1 4,4'-diamine(NPB)与bathocuproine(BCP)2种材料以交叠沉积方式组成一种周期性结构作为空穴注入层,制备了结构为ITO/[NPB/BCP]n/AlQ/LiF/Al的有机电致发光器件(OLED).通过改变空穴注入层阱状结构的重复周期数n,可改变载流子复合区域,进而获得近白光和绿光发射.由于该结构能获得更好的载流子注入平衡,具有交叠结构空穴注入层的近白光器件在15 V时亮度达到3 433.8 cd/m2,在电流密度为60.9 mA/cm2时最大发光效率为2.26 cd/A.当周期数n大于3时得到绿光发射,与单空穴注入层ITO/NPB/AlQ/LiF/Al器件相比,交叠空穴注入层可将器件的最大亮度由2 512.8 cd/m2提高到866 1.0 cd/m2,最大亮度效率在20 mA/cm2时达到4.94 cd/A.     

Hawking Radiation of Charged Particles via Tunne ling from a Cylindrically Symmetric Black Hole in Anti-de Sitter Space-Time

Applying Parikh-Wilzcek‘s semi-classical quantum tunneling model, we study the Hawking radiation of charged particles as tunneling from the event horizon of a cylindrically symmetric black hole in anti-de Sitter space-time.The derived result shows that the tunneling rate of charged particles is related to the change of Bekenstein-Hawking entropy and that the radiation spectrum is not strictly pure thermal after taking the black hole background dynamical and self-gravitation interaction into account, but is consistent with the underlying unitary theory.     

Quantum Tunneling of Massive Particles from a Garfinkle-Horowitz-Strominger Dilatonic Black Hole

Hawking radiation is viewed as a process of quantum tunneling. The massive particles‘ tunneling from Garfinkle-Horowitz-Strominger black hole is investigated. Using Jingyi Zhang‘s de Broglie wave method, we get the unthermal spectrum, and the result is consistent with the underlying unitary theory.     

<100>沟道方向对高迁移率双轴应变硅p-MOSFET的作用

双轴应变技术被证实是一种能同时提高电子和空穴迁移率的颇有前景的方法;<100>沟道方向能有效地提升空穴迁移率.研究了在双轴应变和<100>沟道方向的共同作用下的空穴迁移率.双轴应变通过外延生长弛豫SiGe缓冲层来引入,其中,弛豫SiGe缓冲层作为外延底板,对淀积在其上的硅帽层形成拉伸应力.沟道方向的改变通过在版图上45°旋转器件来实现.这种旋转使得沟道方向在(001)表面硅片上从<110>晶向变成了<100>晶向.对比同是<110>沟道的应变硅pMOS和体硅pMOS,迁移率增益达到了130%;此外,在相同的应变硅pMOS中,沟道方向从<110>到(100)的改变使空穴迁移率最大值提升了30%.讨论和分析了这种双轴应变和沟道方向改变的共同作用下迁移率增强的机理.