In beam Mößbauer spectroscopy: 57Fe in semiconductors

Abstract

An overview of results on microscopic properties, implantation features and dynamics of Fe ions implanted into Si, Ge and ZnS as investigated with in beam Mößbauer spectroscopy(IBMS) is given. Potential and limitations of the method are discussed.     

One Way Traffic: Base-to-Backbone Hole Transfer in Nucleoside Phosphorodithioate

The directionality of the hole-transfer processes between DNA backbone and base was investigated by using phosphorodithioate [P(S⁻)=S] components. ESR spectroscopy in homogeneous frozen aqueous solutions and pulse radiolysis in aqueous solution at ambient temperature confirmed initial formation of G^.+-P(S⁻)=S. The ionization potential of G-P(S⁻)=S was calculated to be slightly lower than that of guanine in 5′-dGMP. Subsequent thermally activated hole transfer from G^.+ to P(S⁻)=S led to dithiyl radical (P-2S^.) formation on the μs timescale. In parallel, ESR spectroscopy, pulse radiolysis, and density functional theory (DFT) calculations confirmed P-2S^. formation in an abasic phosphorodithioate model compound. ESR investigations at low temperatures and higher G-P(S⁻)=S concentrations showed a bimolecular conversion of P-2S^. to the σ²-σ*¹-bonded dimer anion radical [-P-2S 2S-P-]⁻ [ΔG (150 K, DFT)=−7.2 kcal mol⁻¹]. However, [-P-2S 2S-P-]⁻ formation was not observed by pulse radiolysis [ΔG° (298 K, DFT)=−1.4 kcal mol⁻¹]. Neither P-2S^. nor [-P-2S 2S-P-]⁻ oxidized guanine base; only base-to-backbone hole transfer occurs in phosphorodithioate.     

On tunneling through the black hole horizon

It is shown here that there is no way for particle creation to occur by quantum tunneling through an infinitesimal neighborhood of the black hole horizon. This result is a trivial consequence of the regularity of the horizon, the equivalence principle and the general covariance of the relativistic theory of gravity. Moreover, we also confirm the less trivial statement that no particle creation by quantum tunneling through the black hole horizon is possible independent of the size of the presupposed tunneling domain.     

导通孔电镀铜填充技术

概述了下一代PCB用镀铜层导通孔填充技术。     

Plasma generation in silicon-based inductive grid arrays

Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.     

低温条件下光学厚度对Tm3+：YAG材料光谱烧孔孔深的影响

通过理论与实验研究了光学厚度对Tm3+：YAG材料光谱烧孔孔深的影响。提出了一种用于分析光学厚度对光谱烧孔孔深影响的新模型。该模型从理论上推导了烧孔孔深与光学厚度的关系。根据提出的理论模型,当温度大于4K时,通过选择合适的光学厚度可以使光谱烧孔孔深得到最大值。最后通过使用合适的激光与Tm3+：YAG材料所形成的光谱烧孔实验证明了实验结果与理论分析是相一致的。     

Topography and field effects in the inner side of microvia hole using ToF‐SIMS

We have developed a simple and powerful method, which is called ‘angled sample holder method’, to characterize a topographic structured sample such as microsized via hole of ball grid array using time‐of‐flight SIMS. The diameter of via holes was 100 µm and the depth was 70 µm. To remove the shaded area by incidence primary ion beam and to extract secondary ions from the bottom of a via hole, several types of angled sample holders with compensation steering plate were applied on the basis of simulation results using SIMION code. And the analyses using angled sample holder method enabled us to characterize the bottom and side wall of a via hole in clear. Copyright © 2014 John Wiley & Sons, Ltd.     

Xe~(26+)入射Au靶离子L壳层空穴的产生与退激辐射

基于两体碰撞过程的能量与角动量守恒,推导出Xe26+离子与Au原子碰撞过程,单离子的L壳层空穴产额与离子动能的理论关系.实验测定了动能2.4-3.6Me V的Xe26+离子入射Au靶,产生的Xe的L-X射线谱,获得了射线产额与离子入射动能的实验关系.结果表明,碰撞过程产生Xe L壳层空穴的同时,产生了一定数目的 M壳层空穴,导致L壳层空穴平均荧光产额显著变大,在实验能量范围,空穴产额的理论值与射线产额的实验值存在较好的一致性.     

Electron mobility in poly(3-hexylthiophene) enhanced by gamma-ray irradiation

Gamma-ray irradiation effects on the photoresponsive thin-film devices based on the regioregular poly(3-hexylthiophene) (RR-P3HT) conjugated polymer have been studied by means of atomic force microscopy, UV–vis absorption, photoluminescence (PL), and time-of-flight measurements. As a result, increased light absorption in the red region and PL quenching induced by the irradiation were observed. Besides, enhancement of the electron/hole mobilities, attributable to improved ordering or increased nanodomain size of the P3HT thin films, was revealed.