一种含有亚微米孔洞的新型微孔磷酸盐晶体材料的合成及其生长机理

采用水热法成功地合成了一种含有亚微米级孔洞的微孔磷酸盐晶体材料(记为HAP-TAP),其形貌特征是:六棱柱形的晶体表面分布着大量0.4～0.8μm的亚微米级孔洞,孔洞内长有片层状晶体.在样品晶化的过程中,通过控制合成时间,获得了纯六棱柱形晶体的大单晶(记为HAP).使用扫描电子显微镜(SEM)、粉末X射线衍射(XRD)、红外光谱和电子能谱(EDX)对HAP-TAP独特形貌的形成机理进行了研究和揭示.HAP的单晶XRD数据表明,HAP是一种具有二维空旷骨架结构的新型微孔磷酸铝晶体,其分子式为Al5(OH)2(PO4)7(C2N2H10)3.0.5H2O.EDX分析结果表明,生长于六棱柱形晶体孔洞内的片层状晶体为磷酸钛铝材料.     

Exact electronic properties in the classically forbidden region of a metal surface

We derive exact properties of the inhomogeneous electron gas in the asymptotic classically forbidden region at a metal–vacuum interface within the framework of local effective potential energy theory. We derive a new expression for the asymptotic structure of the Kohn–Sham density functional theory (KS‐DFT) exchange‐correlation potential energy v_xc(r) in terms of the irreducible electron self‐energy. We also derive the exact asymptotic structure of the orbitals, density, the Dirac density matrix, the kinetic energy density, and KS exchange energy density. We further obtain the exact expression for the Fermi hole and demonstrate its structure in this asymptotic limit. The exchange‐correlation potential energy is derived to be v_xc(z → ∞) = ?α_KS,xc/z, and its exchange and correlation components to be v_x(z → ∞) = ?α_KS,x/z and v_c(z → ∞) = ?α_KS,c/z, respectively. The analytical expressions for the coefficients α_KS,xc and α_KS,x show them to be dependent on the bulk‐metal Wigner–Seitz radius and the barrier height at the surface. The coefficient α_KS,c = 1/4 is determined in the plasmon‐pole approximation and is independent of these metal parameters. Thus, the asymptotic structure of v_xc(z) in the vacuum region is image‐potential‐like but not the commonly accepted one of ?1/4z. Furthermore, this structure depends on the properties of the metal. Additionally, an analysis of these results via quantal density functional theory (Q‐DFT) shows that both the Pauli W_x(z → ∞) and lowest‐order correlation‐kinetic W(z → ∞) components of the exchange potential energy v_x(z → ∞), and the Coulomb W_c(z → ∞) and higher‐order correlation‐kinetic components of the correlation potential energy v_c(z → ∞), all contribute terms of O(1/z) to the structure. Hence correlations attributable to the Pauli exclusion principle, Coulomb repulsion, and correlation‐kinetic effects all contribute to the asymptotic structure of the effective potential energy at a metal surface. The relevance of the results derived to the theory of image states and to KS‐DFT is also discussed. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2005     

A novel oligothiophene derivative as a hole‐transport with emitting material for OLED

A novel oligothiophene derivative containing the triphenylamine moiety with high glass transition temperature (T_g; 135 °C), 5,5′‐{bis[4‐di(4‐thiophenyl)amino]phenyl}‐2,2′‐bithiophene (TTPA‐dimer) was synthesized by the dimerization of tris[4‐(2‐thienyl)phenyl]amine (TTPA) with a palladium catalysis. Some types of electroluminescent (EL) devices that use the amorphous material for a hole‐ and an electron‐transporting with an emitting layer were fabricated. These devices emitted a bright green‐yellowish light (λ_emi; around 510 nm) with a small full width at half maximum (FWHM) rather than that of Alq₃. The single layer EL device showed a maximum luminance of 221 cd/m² at 8 V (0.06 lm/W at 100 cd/m²). On the other hand, the double layer (TTPA‐dimer/Alq₃) EL device that used Alq₃ as the electron transport material was increased up to 10830 cd/m² at 12 V (0.89 lm/W at 300 cd/m²) and with a lower turn‐on voltage (3.2 V at 0.1 cd/m²) than other types of EL devices. Copyright © 2003 John Wiley & Sons, Ltd.     

Chemical Reduction of CO2 to Different Products during Photo Catalytic Reaction on TiO2 under Diverse Conditions： an Overview

The chemical reduction of CO_2 remains a challenge with respect to the reversal of the oxidative degradation of any organic materials.The conversion of CO_2 into useful substances is essential in developing al- ternative fuels and various raw materials for different in- dustries.This also aids in preventing the continuous rise in tropospheric temperature due to the green house effect of CO_2.In this article an overview of the growth taken place so far in the field of CO_2 chemical reduction is pre- sented.The discussion comprises of photochemical meth- ods for the development of different products,viz.CO, CH_3O_H and CH_4,through chemical reduction of CO_2. This includes the use of photo catalysts,mainly TiO_2, and the role of a hole scavenger(such as 2-propanol)for this purpose.     

Prospects of Sol-Gel Process for Spectral Hole-Burning Glasses

Persistent spectral hole burning was studied in Eu³⁺ ions-doped Al₂O₃-SiO₂ glass prepared by a sol-gel method. The gel synthesized by the hydrolysis of Si- and Al-alkoxides and EuCl₃·6H₂O was heated in air and hydrogen gas atmospheres. For the glass heated in air to contain OH bonds, the hole was formed by the photoinduced rearrangement of the OH bonds surrounding the Eu³⁺ ions, and was thermally refilled and erased above 200 K. On the other hand, the glass heated in hydrogen gas showed the hole spectrum above 200 K. It was found that the hole depth was independent of the temperature and was 7% of the total intensity at room temperature. The proposed mechanism was the electron transfer between the Eu³⁺ ions and the defect centers formed in glass matrix.     

星状四芳胺类空穴传输材料的合成

有机电致发光器件 (ＯＥＬＤ)是继阴极射线管平板显示器 (ＣＲＴ)和液晶显示器 (ＬＣＤ)之后的第三代平板显示器。它具有主动发光、驱动电压低(2伏左右 )、发光亮度高 (1 3 0 0 0ｃｄ ｍ2 以上 ) ,无软Ｘ 射线污染 ,响应速度快 (1 0 -6 ～ 1 0 -8秒 )等优点。从 1 987年美藉华人邓清云等提出多层结构的ＯＥＬＤ的器件结构以来的十多年间 ,ＯＥＬＤ以及其材料的研究已成为显示技术以及显示材料等方面的研究热点 ,发展很快[1～ 3] 。在 1 999年日本先锋公司已开发出了单色的汽车用ＯＥＬ平板显示器商品 ,今年东芝公司又开发出了 2 .7英寸的彩…     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

Mitigating Detrimental Effect of Self-Doping Near the Anode in Highly Efficient Organic Solar Cells

Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) has been one of the most established hole transport layers (HTL) in organic solar cells (OSCs) for several decades. However, the presence of PSS⁻ ions is known to deteriorate device performance via a number of mechanisms including diffusion to the HTL-active layer interface and unwanted local chemical reactions. In this study, it is shown that PSS⁻ ions can also result in local p-doping in the high efficiency donor:non-fullerene acceptor blends – resulting in photocurrent loss. To address these issues, a facile and effective approach is reported to improve the OSC performance through a two-component hole transport layer (HTL) consisting of a self-assembled monolayer of 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic acid) and PEDOT:PSS. The power conversion efficiency (PCE) of 17.1% using devices with PEDOT:PSS HTL improved to 17.7% when the PEDOT:PSS/2PACz two-component HTL is used. The improved performance is attributed to the overlaid 2PACz layer preventing the formation of an intermixed p-doped PSS⁻ ion rich region (≈5–10 nm) at the bulk heterojunction-HTL contact interface, resulting in decreased recombination losses and improved stability. Moreover, the 2PACz monolayer is also found to reduce electrical shunts that ultimately yield improved performance in large area devices with PCE enhanced from 12.3% to 13.3% in 1 cm² cells.     

One-dimensional rigorous hole theory of fluids: Internally constrained ensembles

A hole in a fluid is specified in a well-defined manner. The concentration of holes is a thermodynamic property of the fluid and we derive this concentration in three different ensembles for a one-dimensional fluid of hard rods. The thermodynamics of these rigorously defined holes is developed, and the properties of holes are explored. The ensemble in which the concentration of holes is maintained fixed exhibits dramatic properties. Finally, pair correlation functions for hard rods in the various ensembles are computed. Contrary to a frequently made assumption, the equilibrium number of holes is found to never be proportional to the probability of finding a single hole in the fluid. Constraining the concentration of holes as well as the density leads to dramatic structural effects prominently displayed by the pair correlation function. The ensemble in which the concentration of holes is fixed is an example of an internally constrained metastable system.