Probing phase transitions under extreme conditions by ultrafast techniques: Advances at the Fermi@Elettra free-electron-laser facility

Novel possibilities for studying matter under extreme conditions are opened by the forthcoming availability of free electron laser (FEL) facilities generating subpicosecond photon pulses of high intensity in the VUV and X-ray range, which are able to heat thin samples up to the warm dense matter (WDM) regime. Pump-and-probe ultrafast techniques can be used to study the dynamics of phase transitions and characterize the states under extreme and metastable conditions. Ultrafast (10-100 fs) bulk heating is seen as a novel route for accessing extremely high temperature regimes as well as the transition region between low-density and high density fluids, that is presently considered a no man's land in simple liquids and glasses. Here we briefly describe the present status of the TIMEX end-station devoted to those experimental activities at the Fermi@Elettra FEL facility, and some preliminary results obtained in a pilot ultrafast experiment using a laser source as a pump and a supercontinuum probe aimed to characterize the melting process of Silicon.     

Growth and optical properties of self-frequency-doubling laser crystal Yb:LuAl3(BO3)4

Single crystal of Yb:LuAl₃(BO₃)₄(Yb:LuAB) was grown by the flux method for the first time. The cell parameters of the grown crystal were estimated by X-ray diffraction analysis. The result indicates the symmetry of trigonal space group R32, with lattice parameters a=b=9.26372 Å, c=7.21405 Å, V=536.14 Å³, and Z=4. The absorption and emission spectra of Yb:LuAB crystal at room temperature has also been studied. The fluorescence lifetime for Yb:LuAB crystal is about 1.48 ms. The heat capacity was measured from 25 to 500 °C. Its second harmonic generation efficiency in LuAl₃(BO₃)₄ crystal is 3–4 times that of KDP crystal. These results show that Yb:LuAB crystal would be a potential self-frequency-doubling laser crystal.     

陷阱效应对4H-SiC MESFET温度特性的影响

针对4H-SiC射频MESFET中的自热效应,建立了基于解析模型的材料参数温度模型和器件直流模型.研究了由陷阱造成的背栅效应,并结合材料的温度特性分析了温度升高对器件特性的影响.分析了陷阱对器件特性的影响,并进一步阐明了陷落-发射机制.计算得到陷阱能级为1.07eV,俘获截面为1×10-8cm2,器件的自升温达到100K以上,能够较好地反映实验结果.分析结果表明,背栅电势随陷阱浓度的增大而增大,并随着漏极电压的增大而减小,在室温下达到～3V.另外,由于器件中存在自热效应,背栅电势随漏压的变化加剧.这些模拟分析对实际器件的设计及工艺制造提供了理论上的依据.     

高温处理对镍诱导晶化硅上的薄膜晶体管性能的影响

采用标准双栅CMOS工艺在镍诱导非晶硅横向晶化形成的多晶硅上制造了高性能的薄膜晶体管,并详细研究了器件制备前高温预处理对薄膜晶体管性能的影响.实验发现不同的温度处理,将引起器件性能的显著变化.在1000℃预处理温度下获得了最好的器件性能.1000℃在NMOS管中测得的电子迁移率达314cm2/(V*s),分别比在1100℃和未做高温处理下的大10%和22%.1000℃下器件的最大开关电流比也达到了3×108.对器件的进一步重复性研究证实了上述结果的可靠性.     

高功率单高阶模倒置表面浮雕结构垂直腔面发射激光器

提出并研究了一种带有环形出光孔的倒置表面浮雕结构垂直腔面发射激光器.该器件最突出的结构特点在于,支持稳定的单高阶横向模式激射.在输入电流为六倍阈值电流时,输出功率高达9.8 m W,边模抑制比将近30 d B.在外界为360 K高温时,输出功率仍可达4 m W.且其远场表现出的高斯光束发散角较小.