Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Skin-Depth Theory Explaining Anomalous Picosecond-Terawatt Laser Plasma Interaction II

The anomaly of ion emission at laser irradiation of targets measured by Badziak et al. was analyzed on the background of the extensive research in the past. In contrast to the irradiation with lasers of longer than 100 ps pulse duration, a drastic decrease of the maximum ion energies was measured with ps pulses. Very strange was the observation that the number of emitted fast ions was intensity independent. The usual ponderomotive or relativistic self-focusing theory and related processes could not explain the results. Instead a direct interaction within the skin depth of the irradiated target was concluded. This model confirms the plane geometry nonlinear force interaction in the ps range producing fast plasma blocks moving perpendicular off or into the target. The block moving into the target opens a new scheme of laser fusion by modifying the experiments of Norreys et al. The use of relatively low subrelativistic laser intensities for the new scheme of laser fusion is evaluated on the background of the long years studies of nonlinear force driven plasma blocks and earlier interpenetration fusion reactions for providing the parameters for expected fusion gains much higher than the experiment of Norreys et al. for a fusion power scheme.     

Deposition conditions in tailoring the morphology of highly porous reticular films prepared by electrostatic spray deposition (ESD) technique

Spongy-like reticular structure is a unique morphology fabricated by electrostatic spray deposition (ESD) technique. The effects of solvent, substrate temperature, precursor feeding rate, static electric field strength, and deposition time on tailoring the reticular structure were investigated. Scanning electron microscopy was used to observe the film morphology. MnO_x or LiMn₂O₄ were selected as the model materials. It is found that in addition to the conventional solvent butyl carbitol, other kinds of solvents such as ethylene glycol and propylene glycol can also be used to obtain reticular films at a suitable substrate temperature. Porous films with a low cross-linking degree pore structure can be prepared by increasing precursor feeding rate or decreasing substrate temperature. Increasing the deposition time or the electric field strength helps to obtain reticular films with more homogeneous pore size distribution. In addition, the addition of a high boiling-point solvent in mixed alcohol solvent results in the increase of proper substrate temperature. It is concluded that the fluidity of the spray droplets on the surface of a hot substrate is an important factor to form a reticular film.     

离化团簇束法制备c轴取向的ZnO薄膜

为了探索低温可调控ZnO薄膜沉积技术,提出了一种新的ZnO薄膜制备方法,即离化团簇束（ICB）法,并自行设计研制了应用该方法制备ZnO薄膜的专门装置.采用超音速喷嘴获得高速锌原子团簇束,用Hall等离子体源产生氧离子束离化锌原子团簇,获得了较高的离化率.在沉积过程中,可以通过调节衬底偏压、氩氧比、衬底加热温度等参数,来控制成膜的质量;应用这个装置成功地在硅衬底上制备的ZnO薄膜,经XRD和EDS检测,薄膜的c轴取向一致,Zn、O原子百分比接近于1：1,成膜质量好.     

Comparison of detection efficiencies of negatively charged gold-alkanethiolate-, gold-sulfur- and gold-clusters in ToF-SIMS

In order to improve quantification of high mass ions, the influence of cluster composition on detection efficiencies has been studied using a TOF-SIMS IV with the extended capability of postaccelerating ions up to 20 keV. In this experimental study, we focus on the comparison of detection efficiencies for three types of negatively charged secondary cluster ions: gold-alkanethiolate-clusters (Au_xM_y), gold-sulfur-clusters (Au_xS_y) and gold-clusters (Au_x). The clusters were sputtered from self-assembled monolayers of hexadecanethiols on gold substrates using 10 keV Ar⁺ primary ions. The detection efficiencies were derived on the basis of a function for the secondary electron yield and a fourth-order approximated Poisson probability distribution for electron propagation and amplification within the microchannel plate.In addition to the well-known dependence of detection efficiencies on ion mass and energy, which has already been studied for positively charged ions, we were able to show a similar behaviour for the investigated negatively charged secondary ions. We have observed major variations among the three types of clusters at similar mass and energy as predicted in a theoretical approach. The observed differences are due to the different composition of the investigated clusters which has a major influence on the kinetic ion induced electron emission within the microchannel plate. For the first time it was possible to experimentally verify these predictions for detection efficiencies.     

聚变等离子体中的快离子压强

本文运用Fokker-Planck方程的慢化近似,考虑存在多种离子成份(包括杂质),假定它们具有共同的温度,我们得到了聚变产生的快离子压强的简单封闭形式表示式。表明在典型的工作温度下(～60keV),D-~3He等离子体中聚变产生的快离子压强约为本底热压强的20％,这与D-T等离子体工作在20keV时的比值几乎相同。因此,D-~3He和D-T在它们相应的预期工作温度下,它们各自的快离子压强对总压强的影响是类似的,然而在更高的温度下,这个比值将变得更大。     

Mössbauer effect study of the decagonal quasicrystal Al65Co15Cu20

The ⁵⁷Fe Mössbauer effect study at 5.0 K and in an external magnetic field of 9.0 T on a high-quality stable decagonal quasicrystal Al₆₅Co₁₅Cu_19.9Fe_0.1 is presented. It is shown that the iron atoms are located in two distinct classes of sites. The values of the principal component of the electric field gradient tensor and the asymmetry parameter at these sites are, respectively, ?1.90(10)?×?10²¹ V/m², 0.97(15) and ?3.95(12)?×?10²¹ V/m², 0.00(17).     

Microstructure array on Si and SiOx generated by micro-contact printing, wet chemical etching and reactive ion etching

A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications.     

重离子治疗计划系统的构想

对重离子柬治癌的优势进行简要的回顾，并着重介绍了用于重离子放射治疗的治疗计划系统。治疗计划系统是一套软件系统，不同的硬件设施应有与其相匹配的软件系统，即治疗计划系统。在此基础上，针对兰州重离子加速器的特点提出一些关于治疗计划系统方面的构想。After a brief review concerning the advantages of heavy ions in radiotherapy, more interests are concentrated on treatment planning system （TPS） for heavy ion radiotherapy. Compared to the hardware devices such as accelerator and beam delivery system, the TPS is a set of software system, and different therapy facilities require their corresponding TPSs. Based on the specialities of the Heavy Ion Research Facility in Lanzhou （HIIRFL）, some suggestions on the TPS for tumor therapy at HIRFL finally are given.     

表面传导电子发射显示器件电场分布的理论研究

利用电磁理论对表面传导电子发射显示器件的单个子像素在笛卡尔坐标系内建立合理的电学物理模型，对内部电场强度和电势进行了深入研究，推导出了模型不同部分的面电荷密度、电场强度和电势的表达式.为了形象地表征其电学特性，利用MATLAB 6.5对电场强度和电势的分布情况进行了模拟，从理论上对模拟曲面给出了合理的解释，分析了子像素内部电子的发射机理和电学行为，并与电子多重散射模型和惯性离心模型进行了对比，解释了SED阳极电流形成的重要原因.在误差允许的范围内，本模型有关电场强度分布的结论与惯性离心模型一致. 关键词： 表面传导电子发射显示 遂穿效应 面电荷密度 电场强度