Effect of structural variation within cationic azo-surfactant upon photoresponsive function in aqueous solution

The cationic azo-surfactants possessing different spacers and tail alkyl chain lengths have been synthesized by azocoupling ofp-alkylaniline orop-ethoxyaniline with phenol, followed by alkylation and quaternalization with dibromoalkane and trimethylamine, respectively. These surfactants showed a good solubility in water. A reversibletrans-cis isomerization of the azosurfactants by photoirradiation was assessed by UV-Vis absorption spectra. Due to a difference in HLB between thetrans- andcis-surfactants, the observed critical micelle concentration (CMC) values and the electric conductivity of the surfactant solution at above the CMC were significantly affected by the photoinducedtrans-cis isomerization. The azo-surfactants bearing moderate alkyl chain lengths such as surfactants 6 (R₂=C₂H₄, R₃=C₄H₉) and 9 (R₂=C₄H₈, R₃=C₂H₅) were found to be effective to achieve large CMC changes (3.6 mmol/L for 6 and 5.9 mmol/L for 9) by UV-light irradiation. The replacement of the tail chain species also affected the photoresponsive function. The surfactant 12, possessingp-ethoxy group as the tail chain, was found to form a stable micelle aggregation as compared with the structurally related surfactant 10 having ethyl unit as its tail group, but it exhibited a large CMC change (5.3 mmol/L) by UV-light irradiation.     

半导体集成电路在锂离子电池保护电路中的应用

本文首先扼要介绍锂离子电池保护电路的功能，然后分别介绍过充电保护，过放电保护，过电流保护，最后列举几种保护性半导体IC的性能及应用电路的结构。     

N = 4 Supersymmetric (Dyonic) Hypermultiplets in String Theory

In four-dimensional N = 4 supersymmetric gauge theory, we obtain an exact metric on the moduli space of quantum vacua and analyze the spectra of BPS states in weak as well as in strong coupling regions. Identifying the hypermultiplet of the dyonic state as a string stretched between D₃-brane probe and a 7-brane, we demonstrate that the two hypermultiplets, which become massless at two singularities in supersymmetric theory, correspond to open strings beginning on the D₃-brane and ending on the respective 7-brane.     

Modification of magnetic anisotropy in metallic glasses using high-energy ion beam irradiation

Heavy ion irradiation in the electronic stopping power region induces macroscopic dimensional change in metallic glasses and introduces magnetic anisotropy in some magnetic materials. The present work is on the irradiation study of ferromagnetic metallic glasses, where both dimensional change and modification of magnetic anisotropy are expected. Magnetic anisotropy was measured using Mössbauer spectroscopy of virgin and irradiated Fe₄₀Ni₄₀B₂₀ and Fe₄₀Ni₃₈Mo₄B₁₈ metallic glass ribbons. 90 MeV ¹²⁷I beam was used for the irradiations. Irradiation doses were 5×10¹³ and 7.5×10¹³ ions/cm². The relative intensity ratios D ₂₃ of the second and third lines of the Mössbauer spectra were measured to determine the magnetic anisotropy. The virgin samples of both the materials display in-plane magnetic anisotropy, i.e., the spins are oriented parallel to the ribbon plane. Irradiation is found to cause reduction in magnetic anisotropy. Near-complete randomization of magnetic moments is observed at high irradiation doses. Correlation is found between the residual stresses introduced by ion irradiation and the change in magnetic anisotropy.     

反应离子镀光学薄膜的微观结构分析

用反应离子镀方法制备了ＴｉＯ２单层膜及ＴｉＯ２／ＳｉＯ２多层膜，用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的ＴｉＯ２单层膜及ＴｉＯ２／ＳｉＯ２多层膜的断面结构，并对ＴｉＯ２单层膜进行了喇曼分析和卢瑟福背散射分析。     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

电子电气设备的熔断器、断路器保护

熔断器、断路器是电子电气设备最常用的保护电器,熔断器可以实现过载、短路保护,断路器除具上述功能外,还能实行失压保护.根据线路特点和所保护的设备,采取相应的保护设施,确保用电安全.     

局域网通讯安全的实现

尽管当前有许多维护网络安全的策略，但是局域网内部通讯安全却往往被忽略，文章首先分析当前一些安全策略在维护局域网内部通讯安全的不足，然后提出一种具有加密功能的以太网网卡，用以解决局域网内部通讯的安全问题。     

Ce3+离子对掺Er3+碲酸盐玻璃光谱性质的影响

研究了Ce3 + 对掺Er碲酸盐玻璃荧光光谱性质的影响 ,比较了不同的Ce3 + 掺杂浓度下Er3 + 离子荧光发光强度的变化 ,分析了Ce3 + 离子对Er3 + 离子作用的原理 ,应用经典方程计算了Er3 + 离子 4I1 1 / 2 能级的荧光寿命及其变化