Tailoring magnetism in artificially structured materials: the new frontier

The current standard of electronic devices and data storage media has reached a level such that magnetic materials have to be fabricated on a nanometer scale. In particular, the emerging concept of spintronics, which is based on fact that current carriers have not only charge but also spin, requires the assembling of nanometer-sized magnetic structures with desired magnetic properties. It is this background that motivates scientists and engineers to attempt to grow and characterize magnetic objects at smaller and smaller length scales, from 2D films and multilayers to 1D wires and eventually to 0D dots. In this article, some of the most significant progress in recent years in the effort of growing artificially structured magnetic materials are reviewed. The new structural and magnetic properties of these materials are discussed, with an emphasis on the correlation between structure and magnetism, which also serves as guidance for improving their magnetic properties. The emerging emphasis is on converting the existing knowledge into growing and studying low-dimensional complex materials, which promise to have considerably higher “tuning” ability for desired properties.     

Rare‐Earth Nanoparticles with Enhanced Upconversion Emission and Suppressed Rare‐Earth‐Ion Leakage

Upconversion emissions from rare‐earth nanoparticles have attracted much interest as potential biolabels, for which small particle size and high emission intensity are both desired. Herein we report a facile way to achieve NaYF₄:Yb,Er@CaF₂ nanoparticles (NPs) with a small size (10–13 nm) and highly enhanced (ca. 300 times) upconversion emission compared with the pristine NPs. The CaF₂ shell protects the rare‐earth ions from leaking, when the nanoparticles are exposed to buffer solution, and ensures biological safety for the potential bioprobe applications. With the upconversion emission from NaYF₄:Yb,Er@CaF₂ NPs, HeLa cells were imaged with low background interference.     

Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility status

Extensive material, device, and focal plane array (FPA) reproducibility data are presented to demonstrate significant advances made in the molecular beam epitaxial (MBE) HgCdTe technology. Excellent control of the composition, growth rate, layer thickness, doping concentration, dislocation density, and transport characteristics has been demonstrated. A change in the bandgap is readily achieved by adjusting the beam fluxes, demonstrating the flexibility of MBE in responding to the needs of infrared detection applications in various spectral bands. High performance of photodiodes fabricated on MBE HgCdTe layers reflects on the overall quality of the grown material. The photodiodes were planar p-on-n junctions fabricated by As ion-implantation into indium doped, n-type, in situ grown double layer heterostructures. At 77K, diodes fabricated on MBE Hg_1−xCd_xTe with x ≈ 0.30 (λ_co ≈ 5.6 μm), x ≈ 0.26 (λ_co ≈ 7 μm), x ≈ 0.23 (λ_co ≈ 10 μm) show R₀A products in excess of 1 x 10⁶ ohm-cm², 7 x 10⁵ ohm-cm², and 3 x 10² ohm-cm², respectively. These devices also show high quantum efficiency. As a means to assess the uniformity of the MBE HgCdTe material, two-dimensional 64 x 64 and 128 x 128 mosaic detector arrays were hybridized to Si multiplexers. These focal plane arrays show an operability as high as 97% at 77K for the x ≈ 0.23 spectral band and 93% at 77K for the x ≈ 0.26 spectral band. The operability is limited partly by the density of void-type defects that are present in the MBE grown layers and are easily identified under an optical microscope.