Ag-Ag2Se共敏化ZnO花-棒异质结构的合成及其光电化学特性

采用水相法合成ZnO花-棒(ZFRs)有序阵列结构,同时利用离子交换法,制备Ag和Ag₂Se量子点共敏化光ZnO光阳极(AA-ZFRs)。通过扫描电子显微镜(SEM)、X射线粉末衍射(XRD)、X射线能量色散谱(EDS)和透射电子显微镜(TEM)等手段对样品进行了分析和表征,并测试其光电化学特性以及量子效应。结果表明,Ag-Ag₂Se共敏化ZnO花-棒三维有序结构对太阳光的吸收范围延展至近红外区(750 nm),并且在敏化层与ZnO基质界面形成异质结,有效的抑制光生电子-空穴对复合,增强光转换量子效应,从而提高光电化学性能,开路电压达到-0.77 V,短路电流为0.64 mA。     

Structural characterization techniques for the analysis of semiconductor strained heterostructures

A combined method for structural characterization of strained epitaxial heterostructures involving different techniques such as Rutherford backscattering spectrometry (RBS), multiple crystal X-ray diffractometry (MCD) and transmission electron microscopy (TEM) is presented. In order to obtain a complete characterization of the analysed structure, three different quantities are measured independently: the epilayer thickness, the density of misfit dislocations which may appear at the interface, and the significant components of the strain tensor, mainly the tetragonal distortion, affecting the epilayer lattice. In this way the thermodynamic state and the mechanisms of plastic deformation of the structures can be fully investigated. In this contribution we present and discuss the experimental results concerning a set of InP/GaAs samples having different layer thicknesses ranging from 5 to 500 nm. The thickness of the samples has been determined by RBS. Measurements of in-plane strain and tetragonal distortion have been performed by MCD and RBS-channelling respectively, finally TEM has been used for determining the defects densities and distribution.     

Modulated Binary–Ternary Dual Semiconductor Heterostructures

A generic modular synthetic strategy for the fabrication of a series of binary‐ternary group II‐VI and group I‐III‐VI coupled semiconductor nano‐heterostructures is reported. Using Ag₂Se nanocrystals first as a catalyst and then as sacrificial seeds, four dual semiconductor heterostructures were designed with similar shapes: CdSe‐AgInSe₂, CdSe‐AgGaSe₂, ZnSe‐AgInSe₂, and ZnSe‐AgGaSe₂. Among these, dispersive type‐II heterostructures are further explored for photocatalytic hydrogen evolution from water and these are observed to be superior catalysts than the binary or ternary semi‐conductors. Details of the chemistry of this modular synthesis have been studied and the photophysical processes involved in catalysis are investigated.     

BiVO4/TiO2 core-shell heterostructure: wide range optical absorption and enhanced photoelectrochemical and photocatalytic performance

In the present study, pristine BiVO₄, TiO₂ and BiVO₄/TiO₂ core-shell heterostructured nanoparticles are prepared by hydrothermal methods and studied for structural, morphological, optical, photoelectrochemical water splitting and photocatalytic degradation of methylene blue as an organic pollutant. Both pristine BiVO₄ and TiO₂ exhibit poor PEC and PC performance under visible light illumination. However, an enhanced PEC and PC activity in BiVO₄/TiO₂ core-shell heterostructure is observed due to high solar energy absorption and superior charge separation properties in core-shell nanoparticles. The photoelectrode prepared using BiVO₄/TiO₂ core-shell nanoparticles exhibit a photocathode behavior and produced cathodic photocurrent, however, the pristine BiVO₄ and TiO₂ photoelectrodes act as photoanode and produced anodic photocurrent. This behavior of change in current direction is also observe in the Mott-Schottky analysis where the BiVO₄/TiO₂ core-shell nanoparticles photoelectrode exhibits the positive slow showing p-type semiconducting behavior. The change in cathodic photoresponse in core-shell nanoparticles in comparison to anodic photoresponse of BiVO₄ and TiO₂ nanoparticles is explained in terms of the variations in the work function values. These results highlight the advantages of core-shell nanoparticle of suitable materials for photocatalytic and photoelectrochemical applications.     

Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures

The photoluminescence (PL) at low temperature of three delta-doped AlGaAs/GaAs heterostructures is investigated under continuous and pulsed excitations. The PL under continuous excitations allows the identification of the trapping centres and probes the carrier's transfer to the GaAs channel. The time-resolved photoluminescence (TRPL) inquires about carrier dynamics and gives radiative lifetimes of different levels. The DX level shows two time constants of the intensity decay relating the splitting of the valence band under impurity strains which reduce the crystal symmetry. The two time constants evolve with temperature and exhibit an increase near T=50 K.     

A general solution to the Schrödinger–Poisson equation for a charged hard wall: Application to potential profile of an AlN/GaN barrier structure

A general, system-independent, formulation of the parabolic Schrödinger–Poisson equation is presented for a charged hard wall in the limit of complete screening by the ground state. It is solved numerically using iteration and asymptotic boundary conditions. The solution gives a simple relation between the band bending and sheet charge density at an interface. Approximative analytical expressions for the potential profile and wave function are developed based on properties of the exact solution. Specific tests of the validity of the assumptions leading to the general solution are made. The assumption of complete screening by the ground state is found be a limitation; however, the general solution provides a fair approximate account of the potential profile when the bulk is doped. The general solution is further used in a simple model for the potential profile of an AlN/GaN barrier structure. The result compares well with the solution of the full Schrödinger–Poisson equation.     

Two-Dimensional Silicene–Stanene Heterostructures by Epitaxy

The synthesis of new Xenes and their potential applications prototypes have achieved significant milestones so far. However, to date the realization of Xene heterostructures in analogy with the well known van der Waals heterostructures remains an unresolved issue. Here, a Xene heterostructure concept based on the epitaxial combination of silicene and stanene on Ag(111) is introduced, and how one Xene layer enables another Xene layer of a different nature to grow on top is demonstrated. Single-phase (4 × 4) silicene is synthesized using stanene as a template, and stanene is grown on top of silicene on the other way around. In both heterostructures, in situ and ex situ probes confirm layer-by-layer growth without intercalations and intermixing. Modeling via density functional theory shows that the atomic layers in the heterostructures are strongly interacting, and hexagonal symmetry conservation in each individual layer is sequence selective. The results provide a substantial step toward currently missing Xene heterostructures and may inspire new paths for atomic-scale materials engineering.     

Graphene-Based Heterostructure Composite Sensing Materials for Detection of Nitrogen-Containing Harmful Gases

Graphene-based heterostructure composite is a new type of advanced sensing material that includes composites of graphene with noble metals/metal oxides/metal sulfides/polymers and organic ligands. Exerting the synergistic effect of graphene and noble metals/metal oxides/metal sulfides/polymers and organic ligands is a new way to design advanced gas sensors for nitrogen-containing gas species including NH₃ and NO₂ to solve the problems such as poor stability, high working temperature, poor recovery, and poor selectivity. Different fabrication methods of graphene-based heterostructure composite are extensively studied, enabling massive progress in developing chemiresistive-type sensors for detecting the nitrogen-containing gas species. With the components of noble metals/metal oxides/metal sulfides/polymers and organic ligands which are composited with graphene, each material has its attractive and unique electrical properties. Consequently, the corresponding composite formed with graphene has different sensing characteristics. Furthermore, working ambient gas and response type can affect gas-sensitive characteristic parameters of graphene-based heterostructure composite sensing materials. Moreover, it requires particular attention in studying gas sensing mechanism of graphene-based heterostructure composite sensing materials for nitrogen-containing gas species. This review focuses on related scientific issues such as material synthesis methods, sensing performance, and gas sensing mechanism to discuss the technical challenges and several perspectives.