Van der Waals Heterostructures Comprised of Ultrathin Polymer Nanosheets for Efficient Z‐Scheme Overall Water Splitting

Inspired by natural photosynthesis, Z‐scheme photocatalytic systems are very appealing for achieving efficient overall water splitting. Developing metal‐free Z‐scheme photocatalysts for overall water splitting, however, still remains challenging. The construction of polymer‐based van der Waals heterostructures as metal‐free Z‐scheme photocatalytic systems for overall water splitting is described using aza‐fused microporous polymers (CMP) and C₂N ultrathin nanosheets as O₂‐ and H₂‐evolving catalysts, respectively. Although neither polymer is able to split pure water using visible light, a 2:1 stoichiometric ratio of H₂ and O₂ was observed when aza‐CMP/C₂N heterostructures were used. A solar‐to‐hydrogen conversion efficiency of 0.23 % was determined, which could be further enhanced to 0.40 % by using graphene as the solid electron mediator to promote the interfacial charge‐transfer process. This study highlights the potential of polymer photocatalysts for overall water splitting.     

MoS2‐on‐MXene Heterostructures as Highly Reversible Anode Materials for Lithium‐Ion Batteries

Two‐dimensional (2D) heterostructured materials, combining the collective advantages of individual building blocks and synergistic properties, have spurred great interest as a new paradigm in materials science. The family of 2D transition‐metal carbides and nitrides, MXenes, has emerged as an attractive platform to construct functional materials with enhanced performance for diverse applications. Here, we synthesized 2D MoS₂‐on‐MXene heterostructures through in situ sulfidation of Mo₂TiC₂T_x MXene. The computational results show that MoS₂‐on‐MXene heterostructures have metallic properties. Moreover, the presence of MXene leads to enhanced Li and Li₂S adsorption during the intercalation and conversion reactions. These characteristics render the as‐prepared MoS₂‐on‐MXene heterostructures stable Li‐ion storage performance. This work paves the way to use MXene to construct 2D heterostructures for energy storage applications.     

Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures

Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide interest not only for the fundamental research,but also for the application of next generation electronic and optoelectronic devices.Herein,we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In₂Se₃/MoSe₂ heterostructures.Transmission electron microscopy characterization reveals clearly that the In₂Se₃ has well-aligned lattice orientation with the substrate of monolayer MoSe₂.Due to the interaction between the In₂Se₃ and MoSe₂ layers,the heterostructure shows the quenching and red-shift of photoluminescence.Moreover,the current rectification behavior and photovoltaic effect can be observed from the heterostructure,which is attributed to the unique band structure alignment of the heterostructure,and is further confirmed by Kevin probe force microscopy measurement.The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.     

Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth

Strain relaxation in a GaInN/GaN heterostructure is analyzed by combining in situ X‐ray diffraction (XRD) monitoring and ex situ observations. Two different characteristic thicknesses of GaInN films are defined by the evolution of in situ XRD from the full width at half‐maximum of symmetric (0002) diffraction as a function of GaInN thickness. This in situ XRD measurement enables to clearly observe the critical thicknesses corresponding to strain relaxation in the GaInN/GaN heterostructure caused by the formation of surface pits with bent threading dislocations and the generation of misfit dislocations on GaInN during growth. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Bimetallic nanoparticles: kinetic control matters

Morphologies à la carte: A kinetic control strategy has been utilized to fabricate bimetallic nanoparticles. Using cubic Pd nanocrystals as seeds and a syringe pump that enables precise control over precursor injection rate, it is possible to synthesize Pd-Ag bimetallic nanoparticles with tailored shapes (see picture: dimers, eccentric hybrid bars, and core-shell structures) and tunable localized surface plasmon resonances.     

An electron paramagnetic resonance spectroscopic investigation on the growth mechanism of NaYF4:Gd nanocrystals

Doped nanocrystals of NaYF(4) and NaGdF(4) are currently studied as upconversion luminescence markers and magnetic resonance imaging contrast agents. An EPR investigation on the growth mechanism of NaYF(4):Gd and NaGdF(4) nanocrystals showed that these nanomaterials grow in the standard oleic acid-based reaction medium by a dissolution/recrystallization mechanism and not by the aggregation or oriented attachment of smaller particles.     

Atomically Precise Transformations and Millimeter‐Scale Patterning of Nanoscale Assemblies by Ambient Electrospray Deposition

The performance of semiconductor devices can be fine‐tuned through chemical transformation of their nanostructured components. Such transformations are often carried out in controlled conditions. Herein, the use of electrospray deposition of metal ions from solutions in air is reported, to bring about chemical transformations across mm²‐sized areas of nanostructures. This is illustrated with monolayer assemblies of ultrathin tellurium nanowires (NWs). The process does not require any reducing agent and can transform the NWs chemically, in the solid state itself, under ambient conditions. By using suitable masks, the beam of ions can be patterned to localize such transformations with nanometer precision to obtain aligned multiphasic NWs, containing atomically precise phase boundaries. By controlling the time of exposure of the spray, the scope of the process is further expanded to produce tellurium‐metal telluride core–shell NWs. The method described here represents a crucial step for ambient processing of nanostructured components, useful for applications such as semiconductor device fabrication.     

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of substrate temperature on electrical and magnetic properties of epitaxial La1−x Pb x MnO3 films

Epitaxial La_1−x Pb _x MnO₃ (LPMO) thin films, grown on (100) SrTiO₃ substrates by laser ablation technique at different temperatures between 600 and 850°C, have been characterized for electrical and magnetic properties. The temperature dependence of resistivity showed that the metal-insulator transition temperature (T _MI) decreases with increasing substrate temperature, which has been attributed to decrease in Pb content in the filsm. The YBa₂Cu₃O _x /La_1−x MnO₃ heterostructures, exhibiting both superconductivity and ferromagnetism, have been fabricated.