NiSe2-CoSe2 with a Hybrid Nanorods and Nanoparticles Structure for Efficient Oxygen Evolution Reaction

Hetero-structure induced high performance catalyst for oxygen evolution reaction(OER)in the water splitting reaction has received increased attention.Herein,we demonstrated a novel catalyst system of NiSe₂-CoSe₂ consisting of nanorods and nanoparticles for the efficient OER in the alkaline electrolyte.This catalyst system can be easily fabricated via a low-temperature selenization of the solvothermal synthesized NiCo(OH)x precursor and the unique morphology of hybrid nanorods and nanoparticles was found by the electron microscopy analysis.The high valence state of the metal species was indicated by X-ray photoelectron spectroscopy study and a strong electronic effect was found in the NiSe₂-CoSe₂ catalyst system compared to their counterparts.As a result,NiSe₂-CoSe₂ exhibited high catalytic performance with a low overpotential of 250 mV to reach 10 mA·cm^-2 for OER in the alkaline solution.Furthermore,high catalytic stability and catalytic kinetics were also observed.The superior performance can be attributed to the high valence states of Ni and Co and their strong synergetic coupling effect between the nanorods and nanoparticles,which could accelerate the charge transfer and offer abundant electrocatalytic active sites.The current work offers an efficient hetero-structure catalyst system for OER,and the results are helpful for the catalysis understanding.     

应力对ZnO/Si异质结构的光致发光的影响

研究了ZnO薄膜中应力对发光的影响.实验样品为ZnO体单晶、在Si基片上直接生长的ZnO薄膜以及通过SiC过渡层在Si基片上生长的ZnO薄膜.测量了这三种样品的X射线衍射图形、喇曼光谱和光致发光光谱.由X射线衍射图形可以看出,由于SiC过渡层缓解了ZnO与Si之间的晶格失配,使得通过SiC过渡层在Si上生长的ZnO薄膜的结晶质量好于直接在Si上生长的ZnO薄膜的质量.进一步通过喇曼谱测量发现,与ZnO体单晶相比,直接在Si上生长的ZnO薄膜的E2(high)峰红移1.9cm-1,根据喇曼谱峰位移与应力的关系可以推出薄膜中存在0.4GPa的张应力;而通过SiC过渡层在Si上生长的ZnO薄膜的E2(high)峰红移0.9cm-1,对应着0.2GPa的张应力.对照X射线衍射图形的结果可以看出,薄膜中张应力的大小与薄膜的结晶质量密切相关,表明张应力来源于外延层和基片间的晶格失配,晶格失配越大,外延层中产生的张应力越大.有无SiC过渡层的两种薄膜样品的PL光谱中都存在紫外和绿光两种谱带,随样品热处理时氧气分压增加,两种样品都出现绿光增强的相似的变化规律,但有SiC过渡层的样品的变化幅度较小.这一结果说明,绿色发光中心与薄膜的质量,也就是与薄膜中存在的张应力大小有关.在以往研究中得出的非故意掺杂ZnO薄膜的绿色发光中心来源于氧反位缺陷(Ozn),文中研究的结果正好可以解释氧反位缺陷形成的原因.由于薄膜中存在张应力,使得样品的能量升高,其结果必然会产生缺陷来释放张应力,以便降低系统能量.而氧离子半径大于锌离子半径,氧替位锌有利于释放张应力,也就是说,在存在张应力的情况下,Ozn的形成能降低.这一结果进一步证明Si上生长的ZnO薄膜中的绿色发光中心与氧反位缺陷有关.     

复合周期特异介质光子晶体异质结的谐振模

一维异质结光子晶体包含两个基本单元结构,其中每个单元都由一种特异介质和常规介质层叠构成.利用传输矩阵法,通过数值模拟得出两种不同异质结光子晶体的透射谱.在1.0 ～ 10.0 GHz频率范围内,(AB)6(CD)4结构的透射谱中出现了三个光子带隙,但带隙中没有谐振模;而在(《AB)6(CD)4)2结构的透射谱中,在三个光子带隙内均出现谐振模.在第一带隙内,随着入射角的增大,TE波和TM波的谐振模数目均减少且谐振模发生频移.其中对于TE波,在2.40 GHz附近出现了全向谐振模.     

A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

研制了一种新型的非选择性再生长掩埋异质结构长波长超辐射二极管(SLD).该器件采用渐变组分体材料InGaAs作为有源区,由金属有机物化学气相外延制备.150mA下,SLD发射谱宽的半高全宽为72nm,覆盖范围从1602到1674nm.发射谱光滑、平坦,光谱波纹在1550到1700nm的范围内小于0.3dB.室温连续工作,注入电流200mA下,器件获得了4.3mW的出光功率.器件适用于气体探测器和L-band光纤通信的光源.     

Si和Si-Ge结中不同带带隧穿模型的对比研究

We compared several different band-to-band tunneling(BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si-Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si-Ge hetero-junctions, there were significant differences among these models at high reverse biases(over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si-Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge.     

半导体超晶格微制冷器的研究进展

对新型半导体器件——超晶格微制冷器进行了综述分析,对其理论、实验及与电子器件、光电子器件的集成等方面进行了介绍,并对其应用前景及领域进行了分析.     

Thermoelectric-transport in metal/graphene/metal hetero-structure

We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to present the two-dimensional electronic band structure of graphene. Using the Landauer--Butticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.     

Non-Equilibium Al-Ga interdiffusion in MOCVD reactor annealed AIGaAs quantum well heterostructures

AlGaAs-GaAs quantum well heterostructures have been annealed in an atmospheric pressure MOCVD reactor under an AsH₃/H₂ ambient. Photoluminescence spectra show a uniform and reproducible increase in the effective quantum well band-gap. Energy shift data indicate that Al-Ga interdiffusion occurs under “non-equilibrium” conditions resulting in depth-dependent Al-Ga interdiffusion such that quantum wells close to the surface disorder less than those further away. Activation energies vary from approximately 5.1–5.2 eV for the “equilibrium” case to 3.2–3.6 eV for the “non-equilibrium” case. These results suggest that caution must be exercised in using reported activation energies to characterize Al-Ga interdiffusion for photonic device fabrication. IBM Graduate Fellow Howard Hughes Doctoral Fellow     

Si/Gen/Si(001)异质结薄膜的掠入射荧光X射线吸收精细结构研究

利用掠入射荧光X射线吸收精细结构(XAFS)方法研究了在400℃的温度下分子束外延生长的Si/Ge_n/Si(001)异质结薄膜(n=1，2，4和8个原子层)中Ge原子的局域环境结构.结果表明，在1至2个Ge原子层(ML)生长厚度的异质结薄膜中，Ge原子的第一近邻配位主要是Si原子.随着Ge原子层厚度增加到4ML，Ge原子的最近邻配位壳层中的Ge-Ge配位的平均配位数增加到1.3.当Ge原子层厚度增加到8ML时，第一配位壳层中的Ge-Ge配位占的比例只有55%.这表明在400℃的生长条件下，Ge原子有很强的迁移到Si覆盖层的能力.随着Ge层厚度从1 增加到2，4和8ML，Ge原子迁移到Si覆盖层的量由0.5ML分别增加到1.5，2.0和3.0ML.认为在覆盖Si过程中Ge原子的迁移主要是通过产生Ge原子表面偏析来降低表面能和Ge层的应变能. 关键词： XAFS n/Si(001)异质膜')" href="#">Si/Ge_n/Si(001)异质膜 迁移效应